公开(公告)号：US09443052B2

公开(公告)日：2016-09-13

申请号：US14726243

申请日：2015-05-29

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Rafael Reiter

IPC: G06F17/50 ,  H01J37/304 ,  H01J37/317

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target by means of a particle beam and a blanking aperture array in a particle-optical lithography apparatus, taking into account a non-uniform current dose distribution as generated by the beam over the positions of the apertures of the blanking aperture array: From the desired pattern a nominal exposure pattern is calculated as a raster graphics comprising nominal dose values for the pixels of the raster graphics; based on a map of the current dose distribution, which correlates each aperture with a current factor describing the current dose of the beam at the location of the aperture, a compensated dose value is calculated for each pixel; and for each pixel, a discrete value is determined by selecting a value from a discrete gray scale so as to approximate the compensated dose value.

公开(公告)号：US20160012170A1

公开(公告)日：2016-01-14

申请号：US14795547

申请日：2015-07-09

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: G06F17/50 ,  H01J37/09 ,  H01J37/317

CPC classification number: H01J37/3177 ,  G06F17/5072 ,  G06F17/5081 ,  H01J37/045 ,  H01J37/09 ,  H01J37/3026 ,  H01J37/3175 ,  H01J2237/043 ,  H01J2237/3175 ,  H01J2237/31764

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus so as to match a reference writing tool, possible of different type: The desired pattern is provided as a graphical representation suitable for the reference tool, such as a raster graphics, on the image area on the target. A convolution kernel is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.

Abstract translation: 计算曝光图案，其用于在带电粒子多光束处理装置中的目标上曝光期望图案，以便匹配可能具有不同类型的参考写入工具：期望的图案被提供为适当的图形表示 用于参考工具，如光栅图形，在目标上的图像区域上。 使用卷积核，其描述从图形表示的元素到以所述元素的标称位置为中心的一组像素的映射。 通过图形表示与卷积核的卷积来计算标称曝光图案，所述标称曝光图案适于在用处理装置曝光时在目标上产生标称剂量分布。

公开(公告)号：US09093201B2

公开(公告)日：2015-07-28

申请号：US14155771

申请日：2014-01-15

Applicant: IMS NANOFABRICATION AG

Inventor： Elmar Platzgummer ,  Andreas Chylik ,  Gerald Kratzert ,  Roman Oberleitner

IPC: H01J1/90 ,  H01B17/14 ,  H01J37/147 ,  H01J37/02 ,  H01J37/04 ,  H01J37/15 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01B17/14 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/023 ,  H01J37/04 ,  H01J37/147 ,  H01J37/15 ,  H01J37/3177 ,  H01J2237/036 ,  H01J2237/038 ,  H01J2237/1502

Abstract: A high-voltage insulation device (300) for use in a charged-particle optical apparatus comprises a plurality of rigid pillars (320) made of electrically insulating material. These pillars (320) are arranged around a central passage (310) which traverses the insulating device along its longitudinal axis (L), and the two ends of each pillar are configured to be respectively fixed to two separate electrostatic housings (221, 231) of the charged-particle optical apparatus by means of two respective end plates (311, 312), with the pillars (320) being oriented at an angle so as to be inclined with regard to said longitudinal axis (L). Advantageously, the pillars are mechanically adjustable with regard to their effective length, and each pillar (320) is arranged outside the central passage with its two ends at either of the first and second end plates (311, 312), preferably in a zig-zag arrangement.

Abstract translation: 用于带电粒子光学装置的高压绝缘装置（300）包括由电绝缘材料制成的多个刚性支柱（320）。 这些支柱（320）围绕其纵向轴线（L）穿过绝缘装置的中心通道（310）布置，并且每个支柱的两端被分别固定在两个独立的静电外壳（221,231）上， 通过两个相应的端板（311,312）连接带电粒子光学装置，柱子（320）以相对于所述纵向轴线（L）倾斜的角度定向。 有利地，支柱可相对于它们的有效长度机械地调节，并且每个支柱（320）布置在中心通道的外侧，其两端位于第一和第二端板（311,312）中的任一个处， 扎格布置。

公开(公告)号：US20150069260A1

公开(公告)日：2015-03-12

申请号：US14476616

申请日：2014-09-03

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: H01J37/317 ,  H01J37/04 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/1472 ,  H01J2237/0435 ,  H01J2237/1501 ,  H01J2237/30455

Abstract: In a pattern definition device for a charged-particle multi-beam processing or inspection apparatus comprises a deflection array device with an aperture array field for blanking a plurality of beamlets. The deflection array device comprises a plurality of deflection devices, each associated with a respective opening and comprising at least one electrostatic electrode for deflecting, when activated, the beamlet traversing the opening off its nominal path. However, one or more deflection devices may be defective, permanently unable to deflect their respective beamlets. To correct these “non-deflected beamlets” the pattern definition device comprises a filtering device having openings allowing passage of beamlets where the respective deflection devices are operative, and at least one obstructing device which is programmable to permanently assume an obstructing state where it prevents the respective non-deflected beamlets from traversing the pattern definition device along their respective nominal paths downstream of the pattern definition device.

Abstract translation: 在用于带电粒子多光束处理或检查装置的图案定义装置中，包括具有用于消隐多个子束的孔径阵列场的偏转阵列装置。 偏转阵列装置包括多个偏转装置，每个偏转装置各自与相应的开口相关联并且包括至少一个静电电极，用于当被激活时偏转穿过该开口的标称路径的小梁。 然而，一个或多个偏转装置可能是有缺陷的，永久地不能偏转它们各自的子束。 为了校正这些“非偏转子束”，图案定义装置包括具有开口的过滤装置，允许各个偏转装置可操作的子束通过，以及至少一个阻挡装置，其可编程以永久地呈现妨碍状态， 相应的非偏转子束沿图案定义装置的下游各自的标称路径横穿图案定义装置。

公开(公告)号：US09653263B2

公开(公告)日：2017-05-16

申请号：US15073200

申请日：2016-03-17

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Klaus Schiessl

IPC: G03B27/52 ,  H01J37/10 ,  H01J37/317 ,  H01J37/302

CPC classification number: H01J37/3177 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31769

Abstract: To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. For a pattern which comprises a primary pattern region to be written with a predetermined primary feature size and a secondary pattern region which is composed of structure features capable of being written with a secondary feature size, larger than the primary feature size. The structure features of the primary pattern region are written by exposing a plurality of exposure spots on grid positions of a first exposure grid; the structure features in the secondary pattern region are written by exposing a plurality of exposure spots on grid positions of a second exposure grid according to a second arrangement which is coarser that the regular arrangement of the first exposure grid.

公开(公告)号：US20160336147A1

公开(公告)日：2016-11-17

申请号：US15151937

申请日：2016-05-11

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: H01J37/317

CPC classification number: H01J37/3177 ,  H01J2237/3175 ,  H01J2237/31766

Abstract: To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region of exposure, and this movement defines a number of stripes covering said region in sequential exposures and having respective widths. The number of stripes are written parallel to each other along a general direction, which is at a small angle to a principal pattern direction of structures to be written within the region of exposure.

Abstract translation: 为了用能量带电的粒子束照射目标，该束被形成并成像到目标上，其中它产生由像素组成的图案图像。 图案图像沿着曝光区域上的目标路径移动，并且该移动限定了在顺序曝光中覆盖所述区域并具有相应宽度的多个条纹。 条纹的数量沿着大致方向彼此平行地写出，该大致方向与被写入曝光区域内的结构的主图案方向成小角度。

公开(公告)号：US20160276131A1

公开(公告)日：2016-09-22

申请号：US15073935

申请日：2016-03-18

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: H01J37/302 ,  H01J37/20 ,  H01J37/317

CPC classification number: H01J37/3026 ,  G03F7/70358 ,  G03F7/70425 ,  H01J37/20 ,  H01J37/3177 ,  H01J2237/202 ,  H01J2237/20221 ,  H01J2237/31766

Abstract: To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region to be exposed, and this movement defines a number of stripes covering said region in sequential exposures and having respective widths. The number of stripes is written in at least two sweeps which each have a respective general direction, but the general direction is different for different sweeps, e.g. perpendicular to each other. Each stripe belongs to exactly one sweep and runs substantially parallel to the other stripes of the same sweep, namely, along the respective general direction. For each sweep the widths, as measured across said main direction, of the stripes of one sweep combine into a cover of the total width of the region.

Abstract translation: 为了用能量带电的粒子束照射目标，该束被形成并成像到目标上，其中它产生由像素组成的图案图像。 图案图像沿着待曝光的区域上的目标上的路径移动，并且该移动在顺序曝光中限定覆盖所述区域并具有相应宽度的多个条纹。 条纹数被写入至少两个扫描，每个扫描具有相应的一般方向，但是对于不同的扫描，例如，不同的扫描，总的方向是不同的。 彼此垂直。 每个条带属于正好一个扫描，并且基本上平行于相同扫描的其它条带，即沿相应的大致方向延伸。 对于每个扫描，沿着所述主方向测量的一个扫描条纹的宽度组合成该区域的总宽度的盖。

公开(公告)号：US09373482B2

公开(公告)日：2016-06-21

申请号：US14795547

申请日：2015-07-09

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: H01J3/14 ,  H01J37/317 ,  H01J37/302 ,  G06F17/50 ,  H01J37/09 ,  H01J37/04

CPC classification number: H01J37/3177 ,  G06F17/5072 ,  G06F17/5081 ,  H01J37/045 ,  H01J37/09 ,  H01J37/3026 ,  H01J37/3175 ,  H01J2237/043 ,  H01J2237/3175 ,  H01J2237/31764

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus so as to match a reference writing tool, possible of different type: The desired pattern is provided as a graphical representation suitable for the reference tool, such as a raster graphics, on the image area on the target. A convolution kernel is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.

Abstract translation: 计算曝光图案，其用于在带电粒子多光束处理装置中的目标上曝光期望图案，以便匹配可能具有不同类型的参考写入工具：期望的图案被提供为适当的图形表示 用于参考工具，如光栅图形，在目标上的图像区域上。 使用卷积核，其描述从图形表示的元素到以所述元素的标称位置为中心的一组像素的映射。 通过图形表示与卷积核的卷积来计算标称曝光图案，所述标称曝光图案适于在用处理装置曝光时在目标上产生标称剂量分布。

公开(公告)号：US09269543B2

公开(公告)日：2016-02-23

申请号：US14631690

申请日：2015-02-25

Applicant: IMS Nanofabrication AG

Inventor： Rafael Reiter ,  Elmar Platzgummer ,  Klaus Schiessel

IPC: G21K5/04 ,  H01J37/317 ,  H01J37/04

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/3026 ,  H01J2237/0435 ,  H01J2237/3175 ,  H01J2237/31798

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target by means of a blanking aperture array in a particle-optical lithography apparatus which has a finite number of defects, said desired pattern being composed of a multitude of image elements within an image area on the target: A list of defective blanking apertures is provided, comprising information about the type of defect of the defective blanking apertures; from the desired pattern a nominal exposure pattern is calculated as a raster graphics over the image elements disregarding the defective blanking apertures; the “compromised” image elements (1105) are determined which are exposed by aperture images of defective blanking apertures; for each compromised element (1105), a set of neighboring image elements is selected as “correction elements” (1104); for each compromised element, corrected dose values are calculated for the correction elements, said corrected dose values minimizing an error functional of the deviation of the dose distribution including the defects from the nominal dose distribution, under the constraint that each of the corrected dose values falls within the allowed doses; and a corrected exposure pattern (1103) is generated by substituting the corrected dose values for the nominal dose values at the correction elements.

Abstract translation: 计算曝光图案，其用于通过具有有限数量的缺陷的粒子光学光刻设备中的消隐孔径阵列在目标上曝光期望的图案，所述期望图案由多个图像元素组成， 目标上的图像区域：提供了有缺陷的冲裁孔的列表，其包括关于有缺陷的冲裁孔的缺陷类型的信息; 从期望的图案，将标称曝光图案计算为不考虑有缺陷的消隐孔径的图像元素上的光栅图形; 确定通过有缺陷的冲裁孔的孔径图像曝光的“受损的”图像元件（1105） 对于每个受损元件（1105），一组相邻图像元素被选择为“校正元件”（1104）; 对于每个受损元件，针对校正元件计算校正剂量值，所述校正剂量值在每个校正剂量值下降的约束下使包括来自标称剂量分布的缺陷的剂量分布的偏差的误差功能最小化 在允许的剂量内; 并且通过将校正的剂量值替换为校正元件处的标称剂量值来生成校正的曝光图案（1103）。

公开(公告)号：US20150347660A1

公开(公告)日：2015-12-03

申请号：US14726243

申请日：2015-05-29

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Rafael Reiter

IPC: G06F17/50

CPC classification number: G06F17/5072 ,  G06F17/5081 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/24535 ,  H01J2237/31761

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target by means of a particle beam and a blanking aperture array in a particle-optical lithography apparatus, taking into account a non-uniform current dose distribution as generated by the beam over the positions of the apertures of the blanking aperture array: From the desired pattern a nominal exposure pattern is calculated as a raster graphics comprising nominal dose values for the pixels of the raster graphics; based on a map of the current dose distribution, which correlates each aperture with a current factor describing the current dose of the beam at the location of the aperture, a compensated dose value is calculated for each pixel, by dividing its nominal dose value by the compensation factor corresponding to the current factor of the corresponding aperture(s); and for each pixel, a discrete value is determined by selecting a value from a discrete gray scale so as to approximate the compensated dose value.

Abstract translation: 计算曝光图案，其用于通过粒子光学光刻设备中的粒子束和消隐孔阵列在目标上曝光期望的图案，考虑到由光束产生的不均匀的电流剂量分布 在消隐孔径阵列的孔的位置上：从期望的图案中，将标称曝光图案计算为包括光栅图形的像素的标称剂量值的光栅图形; 基于当前剂量分布的映射，其将每个孔径与描述在孔径的位置处的光束的当前剂量的电流因子相关联，通过将其标称剂量值除以 对应于相应孔径的当前系数的补偿因子; 并且对于每个像素，通过从离散灰度级中选择一个值来确定离散值，以便近似补偿的剂量值。