- Patent Title: Multi-beam writing of pattern areas of relaxed critical dimension
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Application No.: US15073200Application Date: 2016-03-17
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Publication No.: US09653263B2Publication Date: 2017-05-16
- Inventor: Elmar Platzgummer , Klaus Schiessl
- Applicant: IMS Nanofabrication AG
- Applicant Address: AT
- Assignee: IMS Nanofabrication AG
- Current Assignee: IMS Nanofabrication AG
- Current Assignee Address: AT
- Agency: KPPB LLP
- Main IPC: G03B27/52
- IPC: G03B27/52 ; H01J37/10 ; H01J37/317 ; H01J37/302

Abstract:
To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. For a pattern which comprises a primary pattern region to be written with a predetermined primary feature size and a secondary pattern region which is composed of structure features capable of being written with a secondary feature size, larger than the primary feature size. The structure features of the primary pattern region are written by exposing a plurality of exposure spots on grid positions of a first exposure grid; the structure features in the secondary pattern region are written by exposing a plurality of exposure spots on grid positions of a second exposure grid according to a second arrangement which is coarser that the regular arrangement of the first exposure grid.
Public/Granted literature
- US20160276132A1 Multi-Beam Writing of Pattern Areas of Relaxed Critical Dimension Public/Granted day:2016-09-22
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