Multi-beam writing of pattern areas of relaxed critical dimension

    公开(公告)号:US09653263B2

    公开(公告)日:2017-05-16

    申请号:US15073200

    申请日:2016-03-17

    Abstract: To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. For a pattern which comprises a primary pattern region to be written with a predetermined primary feature size and a secondary pattern region which is composed of structure features capable of being written with a secondary feature size, larger than the primary feature size. The structure features of the primary pattern region are written by exposing a plurality of exposure spots on grid positions of a first exposure grid; the structure features in the secondary pattern region are written by exposing a plurality of exposure spots on grid positions of a second exposure grid according to a second arrangement which is coarser that the regular arrangement of the first exposure grid.

    Multi-Beam Writing of Pattern Areas of Relaxed Critical Dimension
    2.
    发明申请
    Multi-Beam Writing of Pattern Areas of Relaxed Critical Dimension 有权
    多光束写作模式区域的轻松关键维度

    公开(公告)号:US20160276132A1

    公开(公告)日:2016-09-22

    申请号:US15073200

    申请日:2016-03-17

    Abstract: To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. For a pattern which comprises a primary pattern region to be written with a predetermined primary feature size and a secondary pattern region which is composed of structure features capable of being written with a secondary feature size, larger than the primary feature size. The structure features of the primary pattern region are written by exposing a plurality of exposure spots on grid positions of a first exposure grid; the structure features in the secondary pattern region are written by exposing a plurality of exposure spots on grid positions of a second exposure grid according to a second arrangement which is coarser that the regular arrangement of the first exposure grid.

    Abstract translation: 为了用能量带电的粒子束照射目标,该束被形成并成像到目标上,其中它产生由像素组成的图案图像。 对于包括要被预定的主要特征尺寸写入的主要图案区域的图案和由能够被写入具有大于主要特征尺寸的次要特征尺寸的结构特征构成的二次图案区域。 通过在第一曝光网格的网格位置上暴露多个曝光点来写入主图案区域的结构特征; 根据第二布置,通过在第二曝光栅格的栅格位置上暴露多个曝光点来写入次级图案区域中的结构特征,该第二布置较粗,以使得第一曝光栅格的规则布置更粗糙。

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