公开(公告)号：US09443052B2

公开(公告)日：2016-09-13

申请号：US14726243

申请日：2015-05-29

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Rafael Reiter

IPC: G06F17/50 ,  H01J37/304 ,  H01J37/317

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target by means of a particle beam and a blanking aperture array in a particle-optical lithography apparatus, taking into account a non-uniform current dose distribution as generated by the beam over the positions of the apertures of the blanking aperture array: From the desired pattern a nominal exposure pattern is calculated as a raster graphics comprising nominal dose values for the pixels of the raster graphics; based on a map of the current dose distribution, which correlates each aperture with a current factor describing the current dose of the beam at the location of the aperture, a compensated dose value is calculated for each pixel; and for each pixel, a discrete value is determined by selecting a value from a discrete gray scale so as to approximate the compensated dose value.

公开(公告)号：US20150248993A1

公开(公告)日：2015-09-03

申请号：US14631690

申请日：2015-02-25

Applicant: IMS Nanofabrication AG

Inventor： Rafael Reiter ,  Elmar Platzgummer ,  Klaus Schiessel

IPC: H01J37/317 ,  H01J37/04

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/3026 ,  H01J2237/0435 ,  H01J2237/3175 ,  H01J2237/31798

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target by means of a blanking aperture array in a particle-optical lithography apparatus which has a finite number of defects, said desired pattern being composed of a multitude of image elements within an image area on the target: A list of defective blanking apertures is provided, comprising information about the type of defect of the defective blanking apertures; from the desired pattern a nominal exposure pattern is calculated as a raster graphics over the image elements disregarding the defective blanking apertures; the “compromised” image elements (1105) are determined which are exposed by aperture images of defective blanking apertures; for each compromised element (1105), a set of neighboring image elements is selected as “correction elements” (1104); for each compromised element, corrected dose values are calculated for the correction elements, said corrected dose values minimizing an error functional of the deviation of the dose distribution including the defects from the nominal dose distribution, under the constraint that each of the corrected dose values falls within the allowed doses; and a corrected exposure pattern (1103) is generated by substituting the corrected dose values for the nominal dose values at the correction elements.

Abstract translation: 计算曝光图案，其用于通过具有有限数量的缺陷的粒子光学光刻设备中的消隐孔径阵列在目标上曝光期望的图案，所述期望图案由多个图像元素组成， 目标上的图像区域：提供了有缺陷的冲裁孔的列表，其包括关于有缺陷的冲裁孔的缺陷类型的信息; 从期望的图案，将标称曝光图案计算为不考虑有缺陷的消隐孔径的图像元素上的光栅图形; 确定通过有缺陷的冲裁孔的孔径图像曝光的“受损的”图像元件（1105） 对于每个受损元件（1105），一组相邻图像元素被选择为“校正元件”（1104）; 对于每个受损元件，针对校正元件计算校正剂量值，所述校正剂量值在每个校正剂量值下降的约束下使包括来自标称剂量分布的缺陷的剂量分布的偏差的误差功能最小化 在允许的剂量内; 并且通过将校正的剂量值替换为校正元件处的标称剂量值来生成校正的曝光图案（1103）。

公开(公告)号：US09495499B2

公开(公告)日：2016-11-15

申请号：US14726243

申请日：2015-05-29

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Rafael Reiter

IPC: G06F17/50 ,  H01J37/304 ,  H01J37/317

CPC classification number: G06F17/5072 ,  G06F17/5081 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/24535 ,  H01J2237/31761

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target by means of a particle beam and a blanking aperture array in a particle-optical lithography apparatus, taking into account a non-uniform current dose distribution as generated by the beam over the positions of the apertures of the blanking aperture array: From the desired pattern a nominal exposure pattern is calculated as a raster graphics comprising nominal dose values for the pixels of the raster graphics; based on a map of the current dose distribution, which correlates each aperture with a current factor describing the current dose of the beam at the location of the aperture, a compensated dose value is calculated for each pixel; and for each pixel, a discrete value is determined by selecting a value from a discrete gray scale so as to approximate the compensated dose value.

Abstract translation: 计算曝光图案，其用于通过粒子光学光刻设备中的粒子束和消隐孔阵列在目标上曝光期望的图案，考虑到由光束产生的不均匀的电流剂量分布 在消隐孔径阵列的孔的位置上：从期望的图案中，将标称曝光图案计算为包括光栅图形的像素的标称剂量值的光栅图形; 基于当前剂量分布的图，其将每个孔径与描述在孔的位置处的束的当前剂量的当前因子相关联，为每个像素计算补偿剂量值; 并且对于每个像素，通过从离散灰度级中选择一个值来确定离散值，以便近似补偿的剂量值。

公开(公告)号：US09269543B2

公开(公告)日：2016-02-23

申请号：US14631690

申请日：2015-02-25

Applicant: IMS Nanofabrication AG

Inventor： Rafael Reiter ,  Elmar Platzgummer ,  Klaus Schiessel

IPC: G21K5/04 ,  H01J37/317 ,  H01J37/04

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/3026 ,  H01J2237/0435 ,  H01J2237/3175 ,  H01J2237/31798

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target by means of a blanking aperture array in a particle-optical lithography apparatus which has a finite number of defects, said desired pattern being composed of a multitude of image elements within an image area on the target: A list of defective blanking apertures is provided, comprising information about the type of defect of the defective blanking apertures; from the desired pattern a nominal exposure pattern is calculated as a raster graphics over the image elements disregarding the defective blanking apertures; the “compromised” image elements (1105) are determined which are exposed by aperture images of defective blanking apertures; for each compromised element (1105), a set of neighboring image elements is selected as “correction elements” (1104); for each compromised element, corrected dose values are calculated for the correction elements, said corrected dose values minimizing an error functional of the deviation of the dose distribution including the defects from the nominal dose distribution, under the constraint that each of the corrected dose values falls within the allowed doses; and a corrected exposure pattern (1103) is generated by substituting the corrected dose values for the nominal dose values at the correction elements.

Abstract translation: 计算曝光图案，其用于通过具有有限数量的缺陷的粒子光学光刻设备中的消隐孔径阵列在目标上曝光期望的图案，所述期望图案由多个图像元素组成， 目标上的图像区域：提供了有缺陷的冲裁孔的列表，其包括关于有缺陷的冲裁孔的缺陷类型的信息; 从期望的图案，将标称曝光图案计算为不考虑有缺陷的消隐孔径的图像元素上的光栅图形; 确定通过有缺陷的冲裁孔的孔径图像曝光的“受损的”图像元件（1105） 对于每个受损元件（1105），一组相邻图像元素被选择为“校正元件”（1104）; 对于每个受损元件，针对校正元件计算校正剂量值，所述校正剂量值在每个校正剂量值下降的约束下使包括来自标称剂量分布的缺陷的剂量分布的偏差的误差功能最小化 在允许的剂量内; 并且通过将校正的剂量值替换为校正元件处的标称剂量值来生成校正的曝光图案（1103）。

公开(公告)号：US20150347660A1

公开(公告)日：2015-12-03

申请号：US14726243

申请日：2015-05-29

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Rafael Reiter

IPC: G06F17/50

CPC classification number: G06F17/5072 ,  G06F17/5081 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/24535 ,  H01J2237/31761

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target by means of a particle beam and a blanking aperture array in a particle-optical lithography apparatus, taking into account a non-uniform current dose distribution as generated by the beam over the positions of the apertures of the blanking aperture array: From the desired pattern a nominal exposure pattern is calculated as a raster graphics comprising nominal dose values for the pixels of the raster graphics; based on a map of the current dose distribution, which correlates each aperture with a current factor describing the current dose of the beam at the location of the aperture, a compensated dose value is calculated for each pixel, by dividing its nominal dose value by the compensation factor corresponding to the current factor of the corresponding aperture(s); and for each pixel, a discrete value is determined by selecting a value from a discrete gray scale so as to approximate the compensated dose value.

Abstract translation: 计算曝光图案，其用于通过粒子光学光刻设备中的粒子束和消隐孔阵列在目标上曝光期望的图案，考虑到由光束产生的不均匀的电流剂量分布 在消隐孔径阵列的孔的位置上：从期望的图案中，将标称曝光图案计算为包括光栅图形的像素的标称剂量值的光栅图形; 基于当前剂量分布的映射，其将每个孔径与描述在孔径的位置处的光束的当前剂量的电流因子相关联，通过将其标称剂量值除以 对应于相应孔径的当前系数的补偿因子; 并且对于每个像素，通过从离散灰度级中选择一个值来确定离散值，以便近似补偿的剂量值。