Method for polishing substrate including functional chip

    公开(公告)号:US11597051B2

    公开(公告)日:2023-03-07

    申请号:US16643124

    申请日:2018-08-22

    申请人: EBARA CORPORATION

    IPC分类号: B24B37/013 B24B37/16

    摘要: To terminate polishing at an appropriate position, an end point position of the polishing is sensed. According to one embodiment, a method that chemomechanically polishes a substrate including a functional chip is provided. The method includes: a step of disposing the functional chip on the substrate; a step of disposing an end point sensing element on the substrate; a step of sealing the substrate on which the functional chip and the end point sensing element are disposed with an insulating material; a step of polishing the insulating material; and a step of sensing an end point of the polishing based on the end point sensing element while the insulating material is polished.

    Polishing apparatus
    2.
    发明授权

    公开(公告)号:US11583973B2

    公开(公告)日:2023-02-21

    申请号:US16872622

    申请日:2020-05-12

    申请人: EBARA CORPORATION

    摘要: In a scheme in which a top ring is held to an end portion of a swing arm, the present invention improves accuracy of polishing end point detection. A polishing apparatus for polishing between a polishing pad 10 and a semiconductor wafer 16 disposed opposed to the polishing pad 10 includes a polishing table 30A for holding the polishing pad 10 and a top ring 31A for holding the semiconductor wafer 16. A swing shaft motor 14 swings a swing arm 110 for holding the top ring 31A. The arm torque detection section 26 detects arm torque applied to the swing arm 110. An end point detection section 28 detects a polishing end point indicating an end of polishing based on the detected arm torque.

    SPECIMEN OBSERVATION METHOD AND DEVICE USING SECONDARY EMISSION ELECTRON AND MIRROR ELECTRON DETECTION
    6.
    发明申请
    SPECIMEN OBSERVATION METHOD AND DEVICE USING SECONDARY EMISSION ELECTRON AND MIRROR ELECTRON DETECTION 有权
    使用二次发射电子和物镜电子检测的样本观测方法和装置

    公开(公告)号:US20150060666A1

    公开(公告)日:2015-03-05

    申请号:US14533974

    申请日:2014-11-05

    申请人: EBARA CORPORATION

    IPC分类号: H01J37/28 H01J37/22

    摘要: A technique capable of improving the ability to observe a specimen using an electron beam in an energy region which has not been conventionally given attention is provided. This specimen observation method comprises: irradiating the specimen with an electron beam; detecting electrons to be observed which have been generated and have obtained information on the specimen by the electron beam irradiation; and generating an image of the specimen from the detected electrons to be observed. The electron beam irradiation comprises irradiating the specimen with the electron beam with a landing energy set in a transition region between a secondary emission electron region in which secondary emission electrons are detected and a mirror electron region in which mirror electrons are detected, thereby causing the secondary emission electrons and the mirror electrons to be mixed as the electrons to be observed. The detection of the electrons to be observed comprises performing the detection in a state where the secondary emission electrons and the mirror electrons are mixed. Observation and inspection can be quickly carried out for a fine foreign material and pattern of 100 nm or less.

    摘要翻译: 提供了一种技术,其能够提高在未经常被注意的能量区域中使用电子束观察样本的能力。 该样本观察方法包括:用电子束照射样本; 检测已经产生的待观察的电子,并通过电子束照射获得关于样品的信息; 以及从所检测的电子产生待观察的样本的图像。 电子束照射包括用电子束照射样本,其中在其中检测到二次发射电子的二次发射电子区域和其中检测到反射镜电子的镜电子区域之间的过渡区域中设置的着陆能量,从而使次级 发射电子和镜电子作为待观察的电子进行混合。 要观察的电子的检测包括在二次发射电子和镜电子混合的状态下进行检测。 对于100nm以下的细小异物和图案,可以快速进行观察和检查。

    POLISHING APPARATUS
    10.
    发明申请
    POLISHING APPARATUS 审中-公开

    公开(公告)号:US20200269381A1

    公开(公告)日:2020-08-27

    申请号:US16872622

    申请日:2020-05-12

    申请人: EBARA CORPORATION

    摘要: In a scheme in which a top ring is held to an end portion of a swing arm, the present invention improves accuracy of polishing end point detection. A polishing apparatus for polishing between a polishing pad 10 and a semiconductor wafer 16 disposed opposed to the polishing pad 10 includes a polishing table 30A for holding the polishing pad 10 and a top ring 31A for holding the semiconductor wafer 16. A swing shaft motor 14 swings a swing arm 110 for holding the top ring 31A. The arm torque detection section 26 detects arm torque applied to the swing arm 110. An end point detection section 28 detects a polishing end point indicating an end of polishing based on the detected arm torque.