公开(公告)号：US12243710B2

公开(公告)日：2025-03-04

申请号：US16909104

申请日：2020-06-23

Applicant: EBARA CORPORATION

Inventor： Ryo Tajima

IPC: H01J37/147 ,  H01J37/317

Abstract: A electron beam irradiation apparatus 1 includes a helping column determination unit 11 that determines, as a helping column, a column having a main irradiation area that is not included in a target irradiation area to be irradiated with an electron beam from among a plurality of columns 2 when information on the target irradiation area is input, and a helped column determination unit 12 that determines, as a helped column for the determined helping column, a column that is adjacent to the helping column and has a main irradiation area included in the target irradiation area from among the plurality of columns 2. A beam scanner 5 of the helping column performs a helping irradiation control for performing electron beam irradiation in the sub-irradiation area of the helping column, thereby irradiating the target irradiation area of the helped column with an electron beam.

公开(公告)号：US11515118B2

公开(公告)日：2022-11-29

申请号：US16794948

申请日：2020-02-19

Applicant: EBARA CORPORATION

Inventor： Kenji Watanabe ,  Shinichi Okada ,  Ryo Tajima ,  Tsutomu Karimata

IPC: H01J37/147 ,  H01J37/244

Abstract: Provided is an electron beam irradiation apparatus including: an aligner configured to perform an alignment of an electron beam by deflecting the electron beam; a deflector having a plurality of electrodes and configured to deflect the electron beam after passing through the aligner; and an adjuster configured to adjust deflection caused by the aligner, wherein the adjuster is configured to perform, on each of the plurality of electrodes, detecting an image of the electron beam by applying a test voltage to one of the plurality of electrodes and applying a reference voltage to the other electrodes, determine a position shift of the electron beam based on each position of the image of the electron beam corresponding to each electrode, and adjust deflection of the aligner so as to cancel the position shift of the electron beam.

公开(公告)号：US10446404B2

公开(公告)日：2019-10-15

申请号：US15873108

申请日：2018-01-17

Applicant: EBARA CORPORATION

Inventor： Ryo Tajima ,  Masahiro Hatakeyama ,  Kenichi Suematsu ,  Kiwamu Tsukamoto ,  Kenji Watanabe ,  Shoji Yoshikawa ,  Shinichi Okada ,  Kenji Terao

IPC: H01L37/00 ,  H01L21/3065 ,  H01J37/147 ,  H01J37/305 ,  H01J37/302 ,  H01L21/027

Abstract: Provided is a method of adjusting an electron-beam irradiated area in an electron beam irradiation apparatus that deflects an electron beam with a deflector to irradiate an object with the electron beam, the method including: emitting an electron beam while changing an irradiation position on an adjustment plate by controlling the deflector in accordance with an electron beam irradiation recipe, the adjustment plate detecting a current corresponding to the emitted electron beam; acquiring a current value detected from the adjustment plate; forming image data corresponding to the acquired current value; determining whether the electron-beam irradiated area is appropriate based on the formed image data; and updating the electron beam irradiation recipe when the electron-beam irradiated area is determined not to be appropriate.

公开(公告)号：US20140158885A1

公开(公告)日：2014-06-12

申请号：US14156140

申请日：2014-01-15

Applicant: EBARA CORPORATION

Inventor： Nobuharu Noji ,  Tohru Satake ,  Hirosi Sobukawa ,  Toshifumi Kimba ,  Masahiro Hatakeyama ,  Shoji Yoshikawa ,  Takeshi Murakami ,  Kenji Watanabe ,  Tsutomu Karimata ,  Kenichi Suematsu ,  Yutaka Tabe ,  Ryo Tajima ,  Keiichi Tohyama

IPC: G01N23/225

CPC classification number: H01J37/20 ,  G01N23/2204 ,  G01N23/225 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/202 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/2801 ,  H01J2237/2817 ,  H01L21/6833 ,  H01L2223/54466

Abstract: A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.

Abstract translation: 提供了一种用于进一步提高速度的系统，即提高SEM型检查装置中的生产量。 用于检查基板的表面的检查装置产生从电子束源25·1发射的电子的交叉，然后在样品W的方向上以期望的倍率形成图像以产生交叉。 当交叉通过时，作为噪声的电子从具有孔的交叉点移除，进行调整，使得交叉成为平行电子束以以期望的分段形式照射基板。 产生电子束，使照度不均匀为10％以下。 从样品W发射的电子被检测器25·11检测。

公开(公告)号：US11217421B2

公开(公告)日：2022-01-04

申请号：US16879151

申请日：2020-05-20

Applicant: EBARA CORPORATION

Inventor： Takehide Hayashi ,  Ryo Tajima ,  Tatsuya Kohama ,  Kenji Watanabe ,  Tsutomu Karimata

IPC: H01J37/147 ,  H01J37/244 ,  H01J37/32 ,  H01J37/14

Abstract: An adjustment method for adjusting a path of an electron beam passing through an electron beam device including at least one unit having at least one lens and at least one aligner electrode, and a detector configured to detect the electron beam, the method including: a step of measuring, by a coordinate measuring machine, an assembly tolerance for each of a plurality of the units constituting the electron beam device; a step of determining a shift amount of the electron beam at a position of the at least one of the lenses; a step of determining an electrode condition for each of a plurality of the aligner electrodes included in the units in a manner such that a shift amount of the electron beam is to be the determined shift amount; and a step of setting each of the aligner electrodes to the corresponding determined electrode condition.

公开(公告)号：US10002740B2

公开(公告)日：2018-06-19

申请号：US15667040

申请日：2017-08-02

Applicant: EBARA CORPORATION

Inventor： Masahiro Hatakeyama ,  Ryo Tajima ,  Kenichi Suematsu ,  Kenji Watanabe ,  Yasushi Toma ,  Kenji Terao ,  Takeshi Murakami

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/141 ,  H01J37/26 ,  H01J37/244

CPC classification number: H01J37/05 ,  H01J37/12 ,  H01J37/141 ,  H01J37/147 ,  H01J37/244 ,  H01J37/26 ,  H01J37/29 ,  H01J2237/0268 ,  H01J2237/16 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/2817

Abstract: An electron beam inspection device includes: a primary electron optical system that irradiates the surface of a sample with an electron beam; and a secondary electron optical system that gathers secondary electrons emitted from the sample and forms an image on the sensor surface of a detector. An electron image of the surface of the sample is obtained from a signal detected by the detector, and the sample is inspected. A cylindrical member that is formed with conductors stacked as an inner layer and an outer layer, and an insulator stacked as an intermediate layer is provided inside a lens tube into which the secondary electron optical system is incorporated. An electron orbital path is formed inside the cylindrical member, and the members constituting the secondary electron optical system are arranged outside the cylindrical member.

公开(公告)号：US09406480B2

公开(公告)日：2016-08-02

申请号：US14596447

申请日：2015-01-14

Applicant: EBARA CORPORATION

Inventor： Nobuharu Noji ,  Tohru Satake ,  Hirosi Sobukawa ,  Toshifumi Kimba ,  Masahiro Hatakeyama ,  Shoji Yoshikawa ,  Takeshi Murakami ,  Kenji Watanabe ,  Tsutomu Karimata ,  Kenichi Suematsu ,  Yutaka Tabe ,  Ryo Tajima ,  Keiichi Tohyama

IPC: H01J37/28 ,  G01N23/22 ,  G01N23/225 ,  H01J37/20 ,  H01J37/05 ,  H01L21/683

CPC classification number: H01J37/20 ,  G01N23/2204 ,  G01N23/225 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/202 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/2801 ,  H01J2237/2817 ,  H01L21/6833 ,  H01L2223/54466

Abstract: A substrate is irradiated by primary electrons and secondary electrons generated from the substrate are detected by a detector. A reference die is placed on the stage to obtain a pattern matching template image including feature coordinates of the reference die. A pattern matching is performed with an arbitrary die in a row or column including the reference die using the template image to obtain feature coordinates of the arbitrary die. An angle of misalignment is calculated between the direction of the row or column including the reference die and one of the directions of movement of the substrate on the basis of the feature coordinates of the arbitrary die and those of the reference die. The stage is rotated to correct the angle of misalignment to conform the direction of the row or column including the reference die with the one of the directions of movement of the substrate.

公开(公告)号：US08946631B2

公开(公告)日：2015-02-03

申请号：US14156140

申请日：2014-01-15

Applicant: Ebara Corporation

Inventor： Nobuharu Noji ,  Tohru Satake ,  Hirosi Sobukawa ,  Toshifumi Kimba ,  Masahiro Hatakeyama ,  Shoji Yoshikawa ,  Takeshi Murakami ,  Kenji Watanabe ,  Tsutomu Karimata ,  Kenichi Suematsu ,  Yutaka Tabe ,  Ryo Tajima ,  Keiichi Tohyama

IPC: G01N23/225 ,  H01J37/28 ,  H01L21/683

CPC classification number: H01J37/20 ,  G01N23/2204 ,  G01N23/225 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/202 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/2801 ,  H01J2237/2817 ,  H01L21/6833 ,  H01L2223/54466

Abstract: A substrate is irradiated by primary electrons and secondary electrons generated from the substrate are detected by a detector. A reference die is placed on the stage to obtain a pattern matching template image including feature coordinates of the reference die. A pattern matching is performed with an arbitrary die in a row or column including the reference die using the template image to obtain feature coordinates of the arbitrary die. An angle of misalignment is calculated between the direction of the row or column including the reference die and one of the directions of movement of the substrate on the basis of the feature coordinates of the arbitrary die and those of the reference die. The stage is rotated to correct the angle of misalignment to conform the direction of the row or column including the reference die with the one of the directions of movement of the substrate.

Abstract translation: 用一次电子照射衬底，由检测器检测由衬底产生的二次电子。 将参考管芯放置在平台上以获得包括参考管芯的特征坐标的模式匹配模板图像。 使用模板图像，使用包含基准管芯的行或列中的任意管芯进行图案匹配，以获得任意管芯的特征坐标。 基于任意模具的特征坐标和参考模具的特征坐标，在包括基准模具的行或列的方向与基板的移动方向之间计算出未对准的角度。 旋转台阶以校正未对准的角度，以使包括基准模具的行或列的方向与衬底的运动方向之一相一致。

公开(公告)号：US10707048B2

公开(公告)日：2020-07-07

申请号：US16253767

申请日：2019-01-22

Applicant: EBARA CORPORATION

Inventor： Ryo Tajima

IPC: H01J37/147 ,  H01J37/20 ,  H01J37/30 ,  H01J37/302 ,  H01J37/317 ,  H01J37/06

Abstract: According to one embodiment, provided is a deflection sensitivity calculation method for calculating deflection sensitivity of a deflector in an electron beam irradiation apparatus that irradiates an irradiation object on a stage with an electron beam by causing the deflector to deflect the electron beam, the deflection sensitivity calculation method including: irradiating an area that covers an adjustment plate with an electron beam by scanning a deflection parameter that controls deflection of the deflector in a predetermined width; detecting a current value detected from the adjustment plate; forming an image corresponding to the detected current value, a number of pixels of the image being known; calculating the number of pixels of a portion corresponding to the adjustment plate in the formed image; and calculating the deflection sensitivity of the deflector.

公开(公告)号：US09852878B2

公开(公告)日：2017-12-26

申请号：US14747488

申请日：2015-06-23

Applicant: EBARA CORPORATION

Inventor： Masahiro Hatakeyama ,  Kenichi Suematsu ,  Ryo Tajima ,  Kiwamu Tsukamoto ,  Kenji Terao ,  Shoji Yoshikawa

IPC: H01J37/20 ,  H01J37/22 ,  H01J37/305 ,  H01J37/30 ,  H01J37/302 ,  H01J37/317

CPC classification number: H01J37/20 ,  H01J37/226 ,  H01J37/3005 ,  H01J37/3023 ,  H01J37/3056 ,  H01J37/3177 ,  H01J2237/24535

Abstract: A surface processing apparatus is an apparatus which performs surface processing on an inspection object 20 by irradiating the inspection object with an electron beam. A surface processing apparatus includes: an electron source 10 (including lens system that controls beam shape of electron beam) which generates an electron beam; a stage 30 on which an inspection object 20 to be irradiated with the electron beam is set; and an optical microscope 110 for checking a position to be irradiated with the electron beam. The current value of the electron beam which irradiates the inspection object 20 is set at 10 nA to 100 A.