摘要:
The present invention relates to a substrate for an integrated circuit package and, more specifically, to a substrate for an integrated circuit package, which reduces mismatch of coefficients of thermal expansion with a semiconductor chip, thereby preventing or minimizing warpage during a reflow process. To this end, the present invention provides a substrate for an integrated circuit package which is interposed between a semiconductor chip and a printed circuit board to electrically connect the semiconductor chip to the printed circuit board, the substrate comprising: an ultra-thin glass; a first CTE control layer which is formed on the upper surface of the ultra-thin glass and formed of a material having a coefficient of thermal expansion different from the coefficients of thermal expansion of the semiconductor chip and the ultra-thin glass; a first metal thin plate which is formed on the upper surface of the first CTE control layer and connected to the semiconductor chip; and a second metal thin plate which is formed on the lower surface of the ultra-thin glass and connected to the printed circuit board.
摘要:
A method for fabricating a package-on-package assembly is provided. A carrier with a passivation layer on the carrier is provided. A redistribution layer (RDL) is formed on the passivation layer. The RDL comprises at least one dielectric layer and at least one metal layer. The at least one metal layer comprises a plurality of first bump pads and second bump pads exposed from a top surface of the at least one dielectric layer. The first bump pads are disposed within a chip mounting area, while the second pads are disposed within a peripheral area. At least one chip is then mounted on the first bump pads. The at least one chip is electrically connected to the RDL through first bumps on the first bump pads. A die package is then mounted on the second bump pads. The die package is electrically connected to the RDL through second bumps on the second bump pads.
摘要:
A substrate comprising a solid glass core having a first surface and a second surface opposed to the first surface; multiple conductors extending through the solid glass core beginning at the first surface and ending at the second surface, wherein one of the conductors has a third surface and a fourth surface, wherein the third surface and the first surface are substantially coplanar, wherein the second surface and the fourth surface are substantially coplanar, wherein one of the conductors comprise a copper-tungsten alloy material, wherein the solid glass core is directly contact with the conductor; and a first dielectric layer and a first metal layer formed at the first surface, wherein the first metal layer at the first surface is electrically coupled with one of the conductors.
摘要:
Various integrated high quality electronic components and systems, and methods of their manufacture, are presented. In one example, a device includes a glass substrate or interposer including one or more metalized through-glass vias (TGVs). The one or more metalized TGVs can be used to form a substrate integrated waveguide, a complementary split ring resonator, a disc loaded monopole antenna or other device. An array of metalized TGVs can define side walls of the integrated waveguide. A disc coupled to a tip of a metalized TGV can provide capacitive disc loading of the monopole antenna.
摘要:
A method for manufacturing includes coating a substrate (22) with a matrix (28) containing a material to be patterned on the substrate. A pattern is fixed in the matrix by directing a pulsed energy beam to impinge on a locus of the pattern so as to cause adhesion of the material to the substrate along the pattern without fully sintering the material in the pattern. The matrix remaining on the substrate outside the fixed pattern is removed, and after removing the matrix, the material in the pattern is sintered.
摘要:
The present technology relates to a semiconductor device and a method of manufacturing the semiconductor device capable of realizing impedance control of the semiconductor device.An input/output wiring line 23 and a ground wiring line 22 are such that through glass vias are provided so as to form a strip line structure by blasting or electric discharge machining and thereafter metal films are formed on a surface and a rear surface. It is possible to configure the semiconductor device with the impedance control by adjusting a conductor diameter of the input/output wiring line 23 and an insulating layer thickness between the input/output wiring line 23 and the ground wiring line 22. The present technology may be applied to the semiconductor device.
摘要:
Substrates and packages for LED based light devices can incorporate a material with high thermal conductivity in at least the lateral direction (e.g., graphite or graphene) to spread heat across the surface of the substrate. A substrate or layer in a multi-layer substrate can have a graphite core disposed between ceramic sublayers that provide electrical insulation and thermal conductivity in the transverse direction. Another substrate or layer in a multi-layer substrate can be fabricated using a composite of graphite and ceramic materials.
摘要:
A substrate comprising a solid glass core having a first surface and a second surface opposed to the first surface; multiple conductors extending through the solid glass core beginning at the first surface and ending at the second surface, wherein one of the conductors has a third surface and a fourth surface, wherein the third surface and the first surface are substantially coplanar, wherein the second surface and the fourth surface are substantially coplanar, wherein one of the conductors comprise a copper-tungsten alloy material, wherein the solid glass core is directly contact with the conductor; and a first dielectric layer and a first metal layer formed at the first surface, wherein the first metal layer at the first surface is electrically coupled with one of the conductors.
摘要:
Embodiments of the present disclosure describe multi-device flexible systems on a chip (SOCs) and methods for making such SOCs. A multi-material stack may be processed sequentially to form multiple integrated circuit (IC) devices in a single flexible SOC. By forming the IC devices from a single stack, it is possible to form contacts for multiple devices through a single metallization process and for those contacts to be located in a common back-plane of the SOC. Stack layers may be ordered and processed according to processing temperature, such that higher temperature processes are performed earlier. In this manner, intervening layers of the stack may shield some stack layers from elevated processing temperatures associated with processing upper layers of the stack. Other embodiments may be described and/or claimed.
摘要:
An apparatus, a semiconductor package including the apparatus and a method are disclosed. The apparatus includes a semiconductor die having second stages of power amplifier disposed over a module substrate. The module substrate includes a plurality of layers, pluralities of vias, and pluralities of routing layers for heat dissipation and electrical connections.