公开(公告)号：US20170154860A1

公开(公告)日：2017-06-01

申请号：US15316217

申请日：2015-06-16

申请人： SONY CORPORATION

发明人： KOSUKE HAREYAMA

IPC分类号： H01L23/66 ,  H01P11/00 ,  H01P3/08 ,  H01L21/48 ,  H01L23/498 ,  H01L25/18

CPC分类号： H01L23/66 ,  H01L21/486 ,  H01L23/12 ,  H01L23/15 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/49894 ,  H01L25/18 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01P3/081 ,  H01P11/003 ,  H01L2924/00

摘要： The present technology relates to a semiconductor device and a method of manufacturing the semiconductor device capable of realizing impedance control of the semiconductor device.An input/output wiring line 23 and a ground wiring line 22 are such that through glass vias are provided so as to form a strip line structure by blasting or electric discharge machining and thereafter metal films are formed on a surface and a rear surface. It is possible to configure the semiconductor device with the impedance control by adjusting a conductor diameter of the input/output wiring line 23 and an insulating layer thickness between the input/output wiring line 23 and the ground wiring line 22. The present technology may be applied to the semiconductor device.

公开(公告)号：US20170317127A1

公开(公告)日：2017-11-02

申请号：US15522001

申请日：2015-10-22

申请人： SONY CORPORATION

发明人： KOSUKE HAREYAMA

IPC分类号： H01L27/146 ,  H04N5/378

摘要： The present technology relates to a solid-state imaging device capable of preventing defects in the appearance thereof, a camera module, and an electronic apparatus. The solid-state imaging device to be provided includes: a semiconductor substrate having pixels formed therein, the pixels each including a photoelectric conversion element; and on-chip lenses formed above the semiconductor substrate, the on-chip lenses corresponding to the pixels. The area in which the on-chip lenses are formed is extended to a peripheral area outside an imaging area formed with the pixels. The present technology can be applied to solid-state imaging devices, such as CMOS image sensors.