-
公开(公告)号：CN104246997B
公开(公告)日：2017-09-08
申请号：CN201380018441.8
申请日：2013-04-05
Applicant: 松下知识产权经营株式会社
CPC classification number: H05K1/181 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/10156 , H01L2224/16238 , H01L2224/2929 , H01L2224/293 , H01L2224/32052 , H01L2224/32057 , H01L2224/32225 , H01L2224/73203 , H01L2224/81052 , H01L2224/81191 , H01L2224/8159 , H01L2224/81609 , H01L2224/81611 , H01L2224/81613 , H01L2224/81639 , H01L2224/81647 , H01L2224/81815 , H01L2224/81935 , H01L2224/81951 , H01L2224/81986 , H01L2224/83104 , H01L2224/83192 , H01L2224/9211 , H01L2224/92125 , H01L2924/00014 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/384 , H05K3/3436 , H05K3/3463 , H05K3/3484 , H05K2201/10734 , H05K2201/10977 , H05K2201/10992 , H05K2201/2009 , H05K2201/2036 , H05K2201/2045 , Y02P70/613 , H01L2924/00012 , H01L2924/00
Abstract: 本安装结构体利用第1增强用树脂(107)覆盖将电路基板(105)的第2电极(104)与半导体封装(101)的凸点(103)进行接合的接合材料(106)的周围。另外，利用第2增强用树脂(108)来覆盖半导体封装(101)的外周部分与电路基板(105)之间。即使接合材料(106)使用熔点比以往要低的焊料材料，抗跌落特性也良好。
-
公开(公告)号：CN104051406B
公开(公告)日：2017-03-15
申请号：CN201310680445.4
申请日：2013-12-11
Applicant: 南茂科技股份有限公司
IPC: H01L23/498
CPC classification number: H01L21/4825 , H01L23/15 , H01L23/49816 , H01L23/4985 , H01L23/49866 , H01L23/49894 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05005 , H01L2224/05027 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11825 , H01L2224/11848 , H01L2224/11901 , H01L2224/13005 , H01L2224/13082 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13562 , H01L2224/13564 , H01L2224/1357 , H01L2224/13644 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/814 , H01L2224/8159 , H01L2224/8169 , H01L2224/81744 , H01L2224/81815 , H01L2224/8185 , H01L2224/81862 , H01L2224/83104 , H01L2924/01322 , H01L2924/15788 , H01L2924/351 , H01L2924/01079 , H01L2924/01046 , H01L2924/00014 , H01L2924/01074 , H01L2924/01082 , H01L2924/00012 , H01L2924/0665 , H01L2924/0655 , H01L2924/206 , H01L2924/014 , H01L2924/00 , H01L2224/1146
Abstract: 一半导体结构包括：一装置；在所述装置上的一导电衬垫；及在所述导电衬垫上方的一Ag1-xYx合金凸块。所述Ag1-xYx凸块的Y包含以任意权重百分比与Ag形成完全固溶体的金属，且所述Ag1-xYx合金凸块之的X在0.005至0.25的一范围内。一个标准差与所述Ag1-xYx合金凸块的一粒径分布的一均值之间的一差异在0.2μm至0.4μm的一范围内。所述Ag1-xYx合金凸块在一纵向横截面平面上的一平均粒径在0.5μm至1.5μm的一范围内。
-
公开(公告)号：CN103460815A
公开(公告)日：2013-12-18
申请号：CN201280015787.8
申请日：2012-04-02
Applicant: 松下电器产业株式会社
CPC classification number: H05K13/0465 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/10126 , H01L2224/13111 , H01L2224/16058 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81192 , H01L2224/81193 , H01L2224/81411 , H01L2224/81413 , H01L2224/8149 , H01L2224/8159 , H01L2224/81613 , H01L2224/81815 , H01L2224/81862 , H01L2224/81885 , H01L2924/01006 , H01L2924/01029 , H01L2924/01049 , H01L2924/0105 , H01L2924/01322 , H01L2924/014 , H01L2924/15311 , H01L2924/15788 , H01L2924/19105 , H01L2924/20106 , H01L2924/351 , H05K1/141 , H05K1/181 , H05K3/3436 , H05K3/3463 , H05K2201/10977 , H05K2203/047 , Y02P70/613 , H01L2924/00 , H01L2924/01047 , H01L2924/00012 , H01L2924/0665
Abstract: 在由焊料将半导体元件接合并安装于第1安装基板、并将该第1安装基板安装于第2基板上的结构中，若使用熔点较低的焊料来将第1安装基板与第2基板进行接合，则连接强度变低。提供一种安装结构体，利用具有217℃以上熔点的第1焊料(1)将半导体元件(4)与第1安装基板(5)进行接合，并将该第1安装基板(5)安装于第2基板(8)上，包括：多个接合部(6)，该接合部(6)将第1安装基板与第2基板进行接合；以及强化构件(7)，该强化构件(7)形成于各接合部的各个周围。接合部结构为包含具有比第1焊料(1)要低的熔点的第2焊料，且形成于相邻的各个接合部处的强化构件之间存在空间(16)。
-
公开(公告)号：CN101082963A
公开(公告)日：2007-12-05
申请号：CN200710128179.9
申请日：2005-04-22
Applicant: 富士通株式会社
IPC: G06K19/077 , H01L21/60 , H01L23/498
CPC classification number: H01L24/12 , G06K19/07749 , G06K19/0775 , H01L23/49855 , H01L24/11 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/10135 , H01L2224/10165 , H01L2224/1134 , H01L2224/131 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/2929 , H01L2224/293 , H01L2224/73203 , H01L2224/81136 , H01L2224/81139 , H01L2224/8114 , H01L2224/81191 , H01L2224/8159 , H01L2224/816 , H01L2224/81801 , H01L2224/81903 , H01L2224/83192 , H01L2224/83851 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/12042 , H01L2924/14 , Y10T29/49018 , H01L2224/13099 , H01L2924/00012 , H01L2224/29075 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
Abstract: RFID标签及其制造方法。本发明提供了一种射频识别(RFID)标签，该RFID标签包括：基片；设置在所述基片上的通信用天线；以及通过凸块连接到所述天线上的电路芯片，所述电路芯片通过所述天线执行无线通信，其中所述天线由金属填料与树脂材料混合的糊剂形成，并且所述凸块正下方的天线部分由相比于除所述凸块正下方的部分之外的部分的糊剂改变了金属填料混合比的粘贴剂形成，以限制在将带有所述凸块的所述电路芯片连接到所述天线上时由压力所导致的凸块下陷。
-
公开(公告)号：CN1067138A
公开(公告)日：1992-12-16
申请号：CN92103441.5
申请日：1992-05-09
Applicant: 株式会社日立制作所
CPC classification number: H01L24/11 , H01L21/4853 , H01L23/49816 , H01L24/14 , H01L24/16 , H01L24/83 , H01L2224/0401 , H01L2224/05124 , H01L2224/05144 , H01L2224/05171 , H01L2224/0558 , H01L2224/05644 , H01L2224/05655 , H01L2224/0603 , H01L2224/114 , H01L2224/1147 , H01L2224/11472 , H01L2224/116 , H01L2224/11831 , H01L2224/11902 , H01L2224/13007 , H01L2224/13012 , H01L2224/13017 , H01L2224/13018 , H01L2224/13023 , H01L2224/13078 , H01L2224/13099 , H01L2224/131 , H01L2224/1403 , H01L2224/14141 , H01L2224/45124 , H01L2224/48744 , H01L2224/8159 , H01L2224/816 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/351 , H05K1/0271 , H05K3/3436 , H05K3/4007 , H05K2201/0347 , H05K2201/0367 , H05K2201/10848 , H05K2203/0577 , H01L2924/00 , H01L2224/29099 , H01L2224/48 , H01L2224/83851
Abstract: 提供一种电子零件装配模件，它具有配线底板和通过该配线底板上的多个凸起电极群连接的电子零件或半导体元件，连接电子零件的上述多个凸起电极群中2个以上凸起电极在与电子零件的连接面和与底板的连接面之间有缩颈部，该缩颈部的横截面的纵向尺寸和横向尺寸或短径和长径不同，同时缩颈部的横向或长径沿电子零件的外周或边配置，用印刷导电性粘合剂的方法将相对配置的电子零件和配线底板同导电性凸起电极连接起来。
-
Patent Agency Ranking
公开(公告)号：CN105493279A
公开(公告)日：2016-04-13
申请号：CN201480048572.5
申请日：2014-08-19
Applicant: 奥斯兰姆施尔凡尼亚公司
IPC: H01L23/498 , H01L21/48 , H01L21/60 , H05K1/18 , H05K3/12
CPC classification number: H05K3/10 , H01L21/4867 , H01L23/4985 , H01L24/24 , H01L24/81 , H01L24/82 , H01L24/83 , H01L24/92 , H01L2224/0401 , H01L2224/04026 , H01L2224/14155 , H01L2224/24011 , H01L2224/24101 , H01L2224/24226 , H01L2224/244 , H01L2224/25171 , H01L2224/29007 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/30155 , H01L2224/32227 , H01L2224/32235 , H01L2224/73203 , H01L2224/73209 , H01L2224/73217 , H01L2224/80903 , H01L2224/8092 , H01L2224/80951 , H01L2224/81191 , H01L2224/81193 , H01L2224/8159 , H01L2224/81639 , H01L2224/81855 , H01L2224/81903 , H01L2224/8192 , H01L2224/81951 , H01L2224/82101 , H01L2224/82102 , H01L2224/83192 , H01L2224/83851 , H01L2224/83855 , H01L2224/9202 , H01L2224/92124 , H01L2224/92144 , H01L2224/97 , H01L2924/12041 , H01L2924/12042 , H05K1/189 , H05K3/0044 , H05K3/0094 , H05K3/1241 , H05K3/305 , H05K3/321 , H05K3/4069 , H05K13/04 , H05K2201/10106 , H05K2203/1469 , H05K2203/173 , Y10T156/1057 , H01L2924/0665 , H01L2924/00014 , H01L2924/00012 , H01L2224/81 , H01L2224/83 , H05K3/4664 , H01L2924/00
Abstract: 本公开针对用于将器件附接到柔性衬底的系统。器件可以以在粘接剂有害的同时防止粘接剂接触导电墨水的方式被耦合到柔性衬底。如果导电环氧树脂被用于将器件中的导电焊盘锚定到柔性衬底，则可以超越其上可以应用导电墨水的器件的边沿来应用导电环氧树脂以作成电连接。小孔也可以被形成在柔性衬底中，允许导电环氧树脂暴露在与器件位置相对的柔性衬底的表面上，所述导电墨水连接是在所述相对的表面上作成的。导电墨水也可以在延伸超过器件的边沿时被直接应用到导电焊盘。柔性衬底可以预先印刷有电路路径，导电墨水将器件耦合到电路路径。
-
公开(公告)号：CN104099653B
公开(公告)日：2015-10-28
申请号：CN201310680470.2
申请日：2013-12-11
Applicant: 南茂科技股份有限公司
CPC classification number: H01L21/4853 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/742 , H01L24/81 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0361 , H01L2224/039 , H01L2224/03912 , H01L2224/0401 , H01L2224/05005 , H01L2224/05027 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05576 , H01L2224/05578 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11825 , H01L2224/11848 , H01L2224/119 , H01L2224/11901 , H01L2224/11906 , H01L2224/13005 , H01L2224/13082 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13562 , H01L2224/13564 , H01L2224/1357 , H01L2224/13644 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/814 , H01L2224/8159 , H01L2224/8169 , H01L2224/81744 , H01L2224/81801 , H01L2224/81815 , H01L2224/8185 , H01L2224/81862 , H01L2224/83104 , H01L2924/01322 , H01L2924/15788 , H01L2924/351 , H01L2924/00014 , H01L2924/01074 , H01L2924/01079 , H01L2924/01046 , H01L2924/01082 , H01L2924/00012 , H01L2224/1182 , H01L2924/0665 , H01L2924/206 , H01L2924/014 , H01L2924/00 , H01L2224/1146
Abstract: 本发明提供一种用于制造一半导体结构的方法。该方法包括：在一半导体晶粒上形成一导电衬垫；在该导电衬垫上方形成一晶种层；在该晶种层上方界定一第一遮罩层；及在该第一遮罩层中形成一银合金凸块本体。该在该第一遮罩层中形成一银合金凸块本体包括以下操作：制备一第一基于氰化物的电镀浴；将该第一基于氰化物的电镀浴的一pH值控制在6至8的一范围内；将该半导体晶粒浸没至该第一基于氰化物的电镀浴中；及将0.1ASD至0.5ASD的一电镀电流密度施加至该半导体晶粒。
-
公开(公告)号：CN104716120A
公开(公告)日：2015-06-17
申请号：CN201410020221.5
申请日：2014-01-16
Applicant: 南茂科技股份有限公司
IPC: H01L23/498 , H01L21/48
CPC classification number: H01L24/13 , H01L21/76898 , H01L23/3192 , H01L23/488 , H01L23/49541 , H01L23/49572 , H01L23/49816 , H01L23/525 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/742 , H01L24/81 , H01L25/0657 , H01L2224/02311 , H01L2224/02313 , H01L2224/02331 , H01L2224/02379 , H01L2224/0239 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/04042 , H01L2224/05005 , H01L2224/05022 , H01L2224/05027 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05548 , H01L2224/05572 , H01L2224/05639 , H01L2224/1132 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11825 , H01L2224/11848 , H01L2224/11849 , H01L2224/11901 , H01L2224/13005 , H01L2224/13025 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13562 , H01L2224/13564 , H01L2224/1357 , H01L2224/13644 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/16238 , H01L2224/16245 , H01L2224/17181 , H01L2224/2919 , H01L2224/32225 , H01L2224/45144 , H01L2224/48639 , H01L2224/48839 , H01L2224/73204 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/814 , H01L2224/8159 , H01L2224/8169 , H01L2224/81744 , H01L2224/81815 , H01L2224/8185 , H01L2224/81862 , H01L2224/81948 , H01L2224/83104 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00011 , H01L2924/12042 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/381 , H01L2924/01079 , H01L2924/00012 , H01L2924/01046 , H01L2924/206 , H01L2924/00014 , H01L2924/01074 , H01L2924/014 , H01L2924/0665 , H01L2924/013 , H01L2924/01047 , H01L2924/00 , H01L2924/01033 , H01L2224/1146
Abstract: 一种半导体结构包括：装置；在所述装置上方的导电衬垫；及安置在所述导电衬垫上的Ag1-xYx合金柱，其中所述Ag1-xYx合金的Y包含以任意重量百分比与Ag形成完全固溶体的金属，且其中所述Ag1-xYx合金的X在0.005至0.25的范围内。
-
公开(公告)号：CN100543768C
公开(公告)日：2009-09-23
申请号：CN200710128179.9
申请日：2005-04-22
Applicant: 富士通株式会社
IPC: G06K19/077 , H01L21/60 , H01L23/498
CPC classification number: H01L24/12 , G06K19/07749 , G06K19/0775 , H01L23/49855 , H01L24/11 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/10135 , H01L2224/10165 , H01L2224/1134 , H01L2224/131 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/2929 , H01L2224/293 , H01L2224/73203 , H01L2224/81136 , H01L2224/81139 , H01L2224/8114 , H01L2224/81191 , H01L2224/8159 , H01L2224/816 , H01L2224/81801 , H01L2224/81903 , H01L2224/83192 , H01L2224/83851 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/12042 , H01L2924/14 , Y10T29/49018 , H01L2224/13099 , H01L2924/00012 , H01L2224/29075 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
Abstract: RFID标签及其制造方法。本发明提供了一种射频识别(RFID)标签，该RFID标签包括：基片；设置在所述基片上的通信用天线；以及通过凸块连接到所述天线上的电路芯片，所述电路芯片通过所述天线执行无线通信，其中所述天线由金属填料与树脂材料混合的糊剂形成，并且所述凸块正下方的天线部分由相比于除所述凸块正下方的部分之外的部分的糊剂改变了金属填料混合比的粘贴剂形成，以限制在将带有所述凸块的所述电路芯片连接到所述天线上时由压力所导致的凸块下陷。
-
公开(公告)号：CN100355050C
公开(公告)日：2007-12-12
申请号：CN200510066359.X
申请日：2005-04-22
Applicant: 富士通株式会社
IPC: H01L21/60 , G06K19/077
CPC classification number: H01L24/12 , G06K19/07749 , G06K19/0775 , H01L23/49855 , H01L24/11 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/10135 , H01L2224/10165 , H01L2224/1134 , H01L2224/131 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/2929 , H01L2224/293 , H01L2224/73203 , H01L2224/81136 , H01L2224/81139 , H01L2224/8114 , H01L2224/81191 , H01L2224/8159 , H01L2224/816 , H01L2224/81801 , H01L2224/81903 , H01L2224/83192 , H01L2224/83851 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/12042 , H01L2924/14 , Y10T29/49018 , H01L2224/13099 , H01L2924/00012 , H01L2224/29075 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
Abstract: RFID标签及其制造方法。本发明提供了一种射频识别(RFID)标签，该RFID标签以非接触方式与外部装置交换信息，其中使用糊剂作为天线材料，并该RFID标签被设计为限制凸块的下陷。在电路芯片或基片上与凸块邻接的位置处设置阻挡物，用于限制在将电路芯片连接到天线上时由压力所导致的电路芯片凸块的下陷。
-
-
-
-
-
-
-
-
-
Search Results
30
records
(took 0.016 seconds)
