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公开(公告)号:US11819923B2
公开(公告)日:2023-11-21
申请号:US16943839
申请日:2020-07-30
发明人: You-Hua Chou , Kuo-Sheng Chuang
IPC分类号: B22F9/28 , B22F1/0545 , H01L21/768 , H01L21/288 , C23C16/02 , C23C16/26
CPC分类号: B22F9/28 , C23C16/0281 , C23C16/26 , H01L21/288 , H01L21/76843 , H01L21/76871 , H01L21/76877 , H01L21/76882 , H01L21/76883 , B22F1/0545
摘要: A method of forming a conductive powder includes reducing, by a reduction reaction, a conductive powder precursor gas using a plasma to form the conductive powder. The method further includes filtering the conductive powder based on particle size. The method further includes dispersing a portion of the conductive powder having a particle size below a threshold value in a fluid.
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公开(公告)号:US11752638B2
公开(公告)日:2023-09-12
申请号:US17835921
申请日:2022-06-08
发明人: You-Hua Chou , Kuo-Sheng Chuang
IPC分类号: B25J11/00 , H01L21/687 , H01L21/677 , B25J15/00
CPC分类号: B25J11/0095 , B25J15/0014 , H01L21/67766 , H01L21/6875 , H01L21/68707 , H01L21/68742 , H01L21/68757
摘要: A substrate handling device includes a substrate reception area defined by an edge. The substrate reception area includes a planar surface, wherein the edge extends upward from the planar surface. The substrate reception area further includes a plurality of contact structures extending upwards from the planar surface, wherein a first contact structure of the plurality of contact structures directly contacts a side surface of the edge, a second contact structure of the plurality of contact structures separated from the edge, a shape of the first contact structure is different from a shape of the second contact structure. The substrate reception area and the planar surface include a first material. Each contact structure of the plurality of contact structures includes a second material different from the first material, and the second material has a hardness aligned to a hardness of a substrate material.
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公开(公告)号:US11669014B2
公开(公告)日:2023-06-06
申请号:US17874317
申请日:2022-07-27
发明人: You-Hua Chou , Kuo-Sheng Chuang
CPC分类号: G03F7/70008 , G01T1/16 , G03F7/7005 , G03F7/7085 , G03F7/70316 , G03F7/70558 , G21G4/00
摘要: A gamma ray generator includes a rotational shaft, a plurality of holders and a plurality of gamma ray sources. The holders are connected to the rotational shaft. The gamma ray sources are disposed in the holders respectively, wherein the holders respectively have an upper portion and a lower portion connecting to the upper portion, and the gamma ray source is placed at an interface between the upper portion and the lower portion.
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公开(公告)号:US20210341845A1
公开(公告)日:2021-11-04
申请号:US17378801
申请日:2021-07-19
发明人: You-Hua Chou , Kuo-Sheng Chuang
摘要: A gamma ray generator includes a plate, a plurality of holes and a plurality of gamma ray sources. The plate is configured to rotate along a rotational axis. The holes are disposed in the plate, and the holes are arranged in a matrix. The gamma ray sources are respectively placed in the holes.
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公开(公告)号:US10651111B2
公开(公告)日:2020-05-12
申请号:US15889450
申请日:2018-02-06
发明人: You-Hua Chou , Yi-Jen Lai , Chun-Jen Chen , Perre Kao
IPC分类号: H01L23/473 , H01L23/488 , H01L23/48 , H01L23/36 , H01L25/065 , H01L23/00 , H01L23/42 , H01L23/367
摘要: A method of preparing a semiconductor substrate with metal bumps on both sides of the substrate includes depositing a first-side UBM layer on a first surface of the substrate, and forming a plurality of first-side metal bumps on the first surface of the substrate after the first-side UBM layer is deposited. The method includes forming a second-side UBM layer on a second side of the substrate, and the first surface and the second surface are opposite of each other. The method includes forming a plurality of second-side metal bumps on the second surface of the substrate after the second-side UBM layer is deposited. The method includes removing exposed first-side UBM layer and exposed second-side UBM layer after the plurality of first-side metal bumps and the plurality of second-side metal bumps are formed. The method includes reflowing the plurality of first-side metal bumps and the plurality of second side metal bumps.
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公开(公告)号:US10263088B2
公开(公告)日:2019-04-16
申请号:US15860317
申请日:2018-01-02
发明人: Yu-Hung Lin , Sheng-Hsuan Lin , Chih-Wei Chang , You-Hua Chou , Chia-Lin Hsu
IPC分类号: H01L29/417 , H01L21/285 , H01L29/66 , H01L23/485 , H01L23/532 , H01L21/768 , H01L29/78 , H01L21/3205 , H01L21/02
摘要: Embodiments of the present disclosure include contact structures and methods of forming the same. An embodiment is a method of forming a semiconductor device, the method including forming a contact region over a substrate, forming a dielectric layer over the contact region and the substrate, and forming an opening through the dielectric layer to expose a portion of the contact region. The method further includes forming a metal-silicide layer on the exposed portion of the contact region and along sidewalls of the opening; and filling the opening with a conductive material to form a conductive plug in the dielectric layer, the conductive plug being electrically coupled to the contact region.
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公开(公告)号:US20180145140A1
公开(公告)日:2018-05-24
申请号:US15860317
申请日:2018-01-02
发明人: Yu-Hung Lin , Sheng-Hsuan Lin , Chih-Wei Chang , You-Hua Chou , Chia-Lin Hsu
IPC分类号: H01L29/417 , H01L29/66 , H01L23/532 , H01L29/78 , H01L21/285 , H01L21/768 , H01L23/485 , H01L21/02
CPC分类号: H01L29/41791 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L23/485 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/5329 , H01L29/665 , H01L29/66575 , H01L29/66636 , H01L29/66795 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要: Embodiments of the present disclosure include contact structures and methods of forming the same. An embodiment is a method of forming a semiconductor device, the method including forming a contact region over a substrate, forming a dielectric layer over the contact region and the substrate, and forming an opening through the dielectric layer to expose a portion of the contact region. The method further includes forming a metal-silicide layer on the exposed portion of the contact region and along sidewalls of the opening; and filling the opening with a conductive material to form a conductive plug in the dielectric layer, the conductive plug being electrically coupled to the contact region.
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公开(公告)号:US09899296B2
公开(公告)日:2018-02-20
申请号:US14593617
申请日:2015-01-09
发明人: You-Hua Chou , Yi-Jen Lai , Chun-Jen Chen , Perre Kao
IPC分类号: H01L21/44 , H01L23/473 , H01L25/065 , H01L23/488 , H01L23/00 , H01L23/48 , H01L23/367 , H01L23/42
CPC分类号: H01L23/473 , H01L23/3677 , H01L23/42 , H01L23/48 , H01L23/488 , H01L24/11 , H01L24/80 , H01L24/81 , H01L25/0657 , H01L2224/11849 , H01L2224/16145 , H01L2924/01029 , H01L2924/014 , H01L2924/15 , H01L2924/15311 , H01L2924/351 , H01L2924/00
摘要: A method of preparing a semiconductor substrate with metal bumps on both sides of the substrate includes depositing a first-side UBM layer on a first surface of the substrate, and forming a plurality of first-side metal bumps on the first surface of the substrate after the first-side UBM layer is deposited. The method includes forming a second-side UBM layer on a second side of the substrate, and the first surface and the second surface are opposite of each other. The method includes forming a plurality of second-side metal bumps on the second surface of the substrate after the second-side UBM layer is deposited. The method includes removing exposed first-side UBM layer and exposed second-side UBM layer after the plurality of first-side metal bumps and the plurality of second-side metal bumps are formed. The method includes reflowing the plurality of first-side metal bumps and the plurality of second side metal bumps.
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公开(公告)号:US09594096B2
公开(公告)日:2017-03-14
申请号:US13969284
申请日:2013-08-16
发明人: You-Hua Chou , Yi-Jen Lai
CPC分类号: G01R1/07307 , G01R1/07314 , G01R3/00
摘要: In accordance with an embodiment, a probe card comprises a contact pad interface comprising front side contacts and back side contacts electrically coupled together. The front side contacts are arranged to simultaneously electrically couple respective bumps of a plurality of dies on a wafer, and the back side contacts are arranged to electrically couple respective contacts of a testing structure.
摘要翻译: 根据一个实施例,探针卡包括接触垫接口,其包括电连接在一起的前侧触点和后侧触点。 前侧触点被布置成同时电耦合在晶片上的多个管芯的相应凸起,并且后侧触点被布置成电耦合测试结构的各个触点。
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公开(公告)号:US09589892B2
公开(公告)日:2017-03-07
申请号:US15160414
申请日:2016-05-20
发明人: Yu-Hung Lin , Mei-Hui Fu , Wei-Jung Lin , You-Hua Chou , Chia-Lin Hsu , Hon-Lin Huang , Shih-Chi Lin
IPC分类号: H01L23/528 , H01L23/522 , H01L23/532 , H01L21/3205 , H01L21/285 , H01L21/768
CPC分类号: H01L23/528 , H01L21/28518 , H01L21/32053 , H01L21/76802 , H01L21/76834 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76877 , H01L21/76886 , H01L21/76889 , H01L21/76897 , H01L23/5226 , H01L23/53209 , H01L23/53223 , H01L23/53238 , H01L23/53261 , H01L23/53266 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate, a dielectric layer over the contact layer, a silicide layer over the exposed portion of the contact layer, a barrier layer along sidewalls of the opening, an alloy layer over the barrier layer, a glue layer over the alloy layer, and a conductive plug over the glue layer, wherein the dielectric layer has an opening, and the opening exposes a portion of the contact layer.
摘要翻译: 公开了互连结构和形成互连结构的方法。 互连结构包括在衬底上的接触层,接触层上的电介质层,接触层的暴露部分上的硅化物层,沿着开口侧壁的阻挡层,阻挡层上的合金层,胶 层,并且在胶层上方具有导电塞,其中介电层具有开口,并且开口暴露接触层的一部分。
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