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公开(公告)号：US20220278199A1
公开(公告)日：2022-09-01
申请号：US17663458
申请日：2022-05-16
发明人： Yan-Ming Tsai , Chih-Wei Chang , Ming-Hsing Tsai , Sheng-Hsuan Lin , Hung-Hsu Chen , Wei-Yip Loh
IPC分类号： H01L29/08 , H01L29/66 , H01L29/78 , H01L27/092 , H01L21/02 , H01L21/8238
摘要： A device includes a fin extending from a semiconductor substrate, a gate stack over and along a sidewall of the fin, an isolation region surrounding the gate stack, an epitaxial source/drain region in the fin and adjacent the gate stack, and a source/drain contact extending through the isolation region, including a first silicide region in the epitaxial source/drain region, the first silicide region including NiSi2, a second silicide region on the first silicide region, the second silicide region including TiSix, and a conductive material on the second silicide region.
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公开(公告)号：US11348839B2
公开(公告)日：2022-05-31
申请号：US16527350
申请日：2019-07-31
发明人： Wei-Yip Loh , Yan-Ming Tsai , Hung-Hsu Chen , Chih-Wei Chang , Sheng-Hsuan Lin
IPC分类号： H01L21/8238 , H01L29/66 , H01L29/08 , H01L27/092 , H01L29/45 , H01L21/285 , H01L21/3065 , H01L21/762 , H01L21/3105 , H01L21/311 , H01L21/266 , H01L29/78 , H01L21/3213
摘要： A semiconductor device with multiple silicide regions is provided. In embodiments a first silicide precursor and a second silicide precursor are deposited on a source/drain region. A first silicide with a first phase is formed, and the second silicide precursor is insoluble within the first phase of the first silicide. The first phase of the first silicide is modified to a second phase of the first silicide, and the second silicide precursor being soluble within the second phase of the first silicide. A second silicide is formed with the second silicide precursor and the second phase of the first silicide.
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公开(公告)号：US11335774B2
公开(公告)日：2022-05-17
申请号：US16656836
申请日：2019-10-18
发明人： Yan-Ming Tsai , Chih-Wei Chang , Ming-Hsing Tsai , Sheng-Hsuan Lin , Hung-Hsu Chen , Wei-Yip Loh
IPC分类号： H01L29/08 , H01L29/66 , H01L29/78 , H01L27/092 , H01L21/02 , H01L21/8238
摘要： A device includes a fin extending from a semiconductor substrate, a gate stack over and along a sidewall of the fin, an isolation region surrounding the gate stack, an epitaxial source/drain region in the fin and adjacent the gate stack, and a source/drain contact extending through the isolation region, including a first silicide region in the epitaxial source/drain region, the first silicide region including NiSi2, a second silicide region on the first silicide region, the second silicide region including TiSix, and a conductive material on the second silicide region.
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公开(公告)号：US20210118994A1
公开(公告)日：2021-04-22
申请号：US16656836
申请日：2019-10-18
发明人： Yan-Ming Tsai , Chih-Wei Chang , Ming-Hsing Tsai , Sheng-Hsuan Lin , Hung-Hsu Chen , Wei-Yip Loh
IPC分类号： H01L29/08 , H01L29/66 , H01L29/78 , H01L27/092 , H01L21/8238 , H01L21/02
摘要： A device includes a fin extending from a semiconductor substrate, a gate stack over and along a sidewall of the fin, an isolation region surrounding the gate stack, an epitaxial source/drain region in the fin and adjacent the gate stack, and a source/drain contact extending through the isolation region, including a first silicide region in the epitaxial source/drain region, the first silicide region including NiSi2, a second silicide region on the first silicide region, the second silicide region including TiSix, and a conductive material on the second silicide region.
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公开(公告)号：US20210035861A1
公开(公告)日：2021-02-04
申请号：US16527389
申请日：2019-07-31
发明人： Ching-Yi Chen , Sheng-Hsuan Lin , Wei-Yip Loh , Hung-Hsu Chen , Chih-Wei Chang
IPC分类号： H01L21/768 , H01L29/66 , H01L29/78 , H01L27/092 , H01L21/02 , H01L21/8238
摘要： A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.
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公开(公告)号：US10263088B2
公开(公告)日：2019-04-16
申请号：US15860317
申请日：2018-01-02
发明人： Yu-Hung Lin , Sheng-Hsuan Lin , Chih-Wei Chang , You-Hua Chou , Chia-Lin Hsu
IPC分类号： H01L29/417 , H01L21/285 , H01L29/66 , H01L23/485 , H01L23/532 , H01L21/768 , H01L29/78 , H01L21/3205 , H01L21/02
摘要： Embodiments of the present disclosure include contact structures and methods of forming the same. An embodiment is a method of forming a semiconductor device, the method including forming a contact region over a substrate, forming a dielectric layer over the contact region and the substrate, and forming an opening through the dielectric layer to expose a portion of the contact region. The method further includes forming a metal-silicide layer on the exposed portion of the contact region and along sidewalls of the opening; and filling the opening with a conductive material to form a conductive plug in the dielectric layer, the conductive plug being electrically coupled to the contact region.
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公开(公告)号：US20180145140A1
公开(公告)日：2018-05-24
申请号：US15860317
申请日：2018-01-02
发明人： Yu-Hung Lin , Sheng-Hsuan Lin , Chih-Wei Chang , You-Hua Chou , Chia-Lin Hsu
IPC分类号： H01L29/417 , H01L29/66 , H01L23/532 , H01L29/78 , H01L21/285 , H01L21/768 , H01L23/485 , H01L21/02
CPC分类号： H01L29/41791 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L23/485 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/5329 , H01L29/665 , H01L29/66575 , H01L29/66636 , H01L29/66795 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the present disclosure include contact structures and methods of forming the same. An embodiment is a method of forming a semiconductor device, the method including forming a contact region over a substrate, forming a dielectric layer over the contact region and the substrate, and forming an opening through the dielectric layer to expose a portion of the contact region. The method further includes forming a metal-silicide layer on the exposed portion of the contact region and along sidewalls of the opening; and filling the opening with a conductive material to form a conductive plug in the dielectric layer, the conductive plug being electrically coupled to the contact region.
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公开(公告)号：US09368357B2
公开(公告)日：2016-06-14
申请号：US14982592
申请日：2015-12-29
发明人： Chih-Wei Chang , Hung-Chang Hsu , Chun-Hsien Huang , Yu-Hung Lin , Li-Wei Chu , Sheng-Hsuan Lin , Wei-Jung Lin , Yu-Shiuan Wang
IPC分类号： H01L21/00 , H01L21/44 , H01L21/285 , H01L21/306 , H01L21/265 , H01L21/324 , H01L21/225 , H01L29/66 , H01L21/768
CPC分类号： H01L21/28518 , H01L21/02063 , H01L21/02359 , H01L21/2253 , H01L21/26506 , H01L21/26586 , H01L21/30604 , H01L21/324 , H01L21/76814 , H01L21/76831 , H01L21/76843 , H01L21/76855 , H01L21/76897 , H01L29/165 , H01L29/665 , H01L29/66545 , H01L29/6659 , H01L29/66636 , H01L29/7848
摘要： A method includes etching a dielectric layer to form an opening, with an underlying region underlying the dielectric layer exposed to the opening, and performing a bombardment to bombard a surface region of the underlying region through the opening. After the bombardment, the surface region is reacted with a process gas to form a reaction layer. An anneal is then performed to remove the reaction layer.
摘要翻译： 一种方法包括蚀刻电介质层以形成开口，其中介质层下方的下部区域暴露于开口，并且通过开口进行轰击以轰击下面区域的表面区域。 轰击后，表面区域与处理气体反应形成反应层。 然后进行退火以除去反应层。
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公开(公告)号：US20160126102A1
公开(公告)日：2016-05-05
申请号：US14982592
申请日：2015-12-29
发明人： Chih-Wei Chang , Hung-Chang Hsu , Chun-Hsien Huang , Yu-Hung Lin , Li-Wei Chu , Sheng-Hsuan Lin , Wei-Jung Lin , Yu-Shiuan Wang
IPC分类号： H01L21/285 , H01L21/265 , H01L21/768 , H01L21/225 , H01L29/66 , H01L21/306 , H01L21/324
CPC分类号： H01L21/28518 , H01L21/02063 , H01L21/02359 , H01L21/2253 , H01L21/26506 , H01L21/26586 , H01L21/30604 , H01L21/324 , H01L21/76814 , H01L21/76831 , H01L21/76843 , H01L21/76855 , H01L21/76897 , H01L29/165 , H01L29/665 , H01L29/66545 , H01L29/6659 , H01L29/66636 , H01L29/7848
摘要： A method includes etching a dielectric layer to form an opening, with an underlying region underlying the dielectric layer exposed to the opening, and performing a bombardment to bombard a surface region of the underlying region through the opening. After the bombardment, the surface region is reacted with a process gas to form a reaction layer. An anneal is then performed to remove the reaction layer.
摘要翻译： 一种方法包括蚀刻电介质层以形成开口，其中介质层下方的下部区域暴露于开口，并且通过开口进行轰击以轰击下面区域的表面区域。 轰击后，表面区域与处理气体反应形成反应层。 然后进行退火以除去反应层。
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公开(公告)号：US20190109044A1
公开(公告)日：2019-04-11
申请号：US16216585
申请日：2018-12-11
发明人： Yu-Hung Lin , Sheng-Hsuan Lin , Chih-Wei Chang , You-Hua Chou , Chia-Lin Hsu
IPC分类号： H01L21/768 , H01L23/532 , H01L23/538 , H01L23/522 , H01L23/485 , H01L21/285
摘要： An embodiment contact plug includes a bilayer structure and a diffusion barrier layer on a sidewall and a bottom surface of the bilayer structure. The bilayer structure includes a conductive core and a conductive liner on a sidewall and a bottom surface of the conductive core. In the embodiment contact plug, the conductive liner comprises cobalt or ruthenium.
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