公开(公告)号：US09620601B2

公开(公告)日：2017-04-11

申请号：US14321366

申请日：2014-07-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Sheng-Hsuan Lin ,  Chih-Wei Chang ,  You-Hua Chou ,  Chia-Lin Hsu

IPC分类号： H01L29/417 ,  H01L21/3205 ,  H01L21/285 ,  H01L29/66 ,  H01L23/485 ,  H01L21/768 ,  H01L21/02 ,  H01L23/532

CPC分类号： H01L29/41791 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the present disclosure include contact structures and methods of forming the same. An embodiment is a method of forming a semiconductor device, the method including forming a contact region over a substrate, forming a dielectric layer over the contact region and the substrate, and forming an opening through the dielectric layer to expose a portion of the contact region. The method further includes forming a metal-silicide layer on the exposed portion of the contact region and along sidewalls of the opening; and filling the opening with a conductive material to form a conductive plug in the dielectric layer, the conductive plug being electrically coupled to the contact region.

公开(公告)号：US20160260633A1

公开(公告)日：2016-09-08

申请号：US15156515

申请日：2016-05-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Sheng-Hsuan Lin ,  Chih-Wei Chang ,  You-Hua Chou ,  Chia-Lin Hsu

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC分类号： H01L21/76847 ,  H01L21/28518 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/481 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5384 ,  H01L2924/0002 ,  H01L2924/00

摘要： An embodiment contact plug includes a bilayer structure and a diffusion barrier layer on a sidewall and a bottom surface of the bilayer structure. The bilayer structure includes a conductive core and a conductive liner on a sidewall and a bottom surface of the conductive core. In the embodiment contact plug, the conductive liner comprises cobalt or ruthenium.

公开(公告)号：US20160005824A1

公开(公告)日：2016-01-07

申请号：US14321366

申请日：2014-07-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Sheng-Hsuan Lin ,  Chih-Wei Chang ,  You-Hua Chou ,  Chia-Lin Hsu

IPC分类号： H01L29/417 ,  H01L21/3205 ,  H01L29/66 ,  H01L21/02 ,  H01L21/306 ,  H01L21/285 ,  H01L21/321

CPC分类号： H01L29/41791 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the present disclosure include contact structures and methods of forming the same. An embodiment is a method of forming a semiconductor device, the method including forming a contact region over a substrate, forming a dielectric layer over the contact region and the substrate, and forming an opening through the dielectric layer to expose a portion of the contact region. The method further includes forming a metal-silicide layer on the exposed portion of the contact region and along sidewalls of the opening; and filling the opening with a conductive material to form a conductive plug in the dielectric layer, the conductive plug being electrically coupled to the contact region.

摘要翻译： 本公开的实施例包括接触结构及其形成方法。 一个实施方案是一种形成半导体器件的方法，该方法包括在衬底上形成接触区域，在接触区域和衬底上形成电介质层，以及形成通过电介质层的开口以暴露接触区域的一部分 。 该方法还包括在接触区域的暴露部分上并沿着开口的侧壁形成金属硅化物层; 以及用导电材料填充所述开口以在所述电介质层中形成导电插塞，所述导电插塞电耦合到所述接触区域。

公开(公告)号：US11855452B2

公开(公告)日：2023-12-26

申请号：US18063690

申请日：2022-12-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ken-Hao Fan ,  Yu-Ti Su ,  Tzu-Cheng Kao ,  Ming-Fu Tsai ,  Chia-Lin Hsu

IPC分类号： H02H9/04

CPC分类号： H02H9/046

摘要： An ESD power clamp device includes an ESD detection circuit; a controlling circuit coupled with the ESD detection circuit; a field effect transistor (FET) coupled with the controlling circuit, and an impedance element coupled with the FET. The FET includes a drain terminal coupled with a first supply node; a gate terminal coupled with the controlling circuit; a source terminal coupled with a second supply node via the impedance element; and a bulk terminal coupled with second supply node.

公开(公告)号：US11493909B1

公开(公告)日：2022-11-08

申请号：US17232589

申请日：2021-04-16

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Lee-Chun Chen ,  Yi-Chien Yang ,  Chia-Lin Hsu

IPC分类号： G05B19/418

摘要： A semiconductor fabrication facility (FAB) is provided. The FAB includes a number of processing tools. The FAB also includes a sampling station connected to the processing tools. In addition, the FAB includes a detection vehicle detachably connected to the sampling station and comprising a metrology module. When the detection vehicle is connected to the sampling station, a gas sample is delivered from one of the processing tools to the metrology module of the detection vehicle via the sampling station for performing a measurement of a parameter in related to the gas sample by the metrology module. In addition, the FAB includes a control system configured to issue a warning when the parameter in related to the gas sample from the one of the processing tools is out of a range of acceptable values associated with the one of the processing tools.

公开(公告)号：US20180144978A1

公开(公告)日：2018-05-24

申请号：US15860447

申请日：2018-01-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Sheng-Hsuan Lin ,  Chih-Wei Chang ,  You-Hua Chou ,  Chia-Lin Hsu

IPC分类号： H01L21/768 ,  H01L23/538 ,  H01L23/532 ,  H01L23/522 ,  H01L21/285 ,  H01L23/485 ,  H01L23/48

CPC分类号： H01L21/76847 ,  H01L21/28518 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/481 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5384 ,  H01L2924/0002 ,  H01L2924/00

摘要： An embodiment contact plug includes a bilayer structure and a diffusion barrier layer on a sidewall and a bottom surface of the bilayer structure. The bilayer structure includes a conductive core and a conductive liner on a sidewall and a bottom surface of the conductive core. In the embodiment contact plug, the conductive liner comprises cobalt or ruthenium.

公开(公告)号：US11848554B2

公开(公告)日：2023-12-19

申请号：US17452281

申请日：2021-10-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chia-Lin Hsu ,  Ming-Fu Tsai ,  Yu-Ti Su ,  Kuo-Ji Chen

IPC分类号： H02H9/04 ,  H01L27/02 ,  H02H1/00

CPC分类号： H02H9/046 ,  H01L27/0255 ,  H01L27/0259 ,  H01L27/0266 ,  H02H1/0007 ,  H01L27/0288

摘要： An electrostatic discharge (ESD) circuit includes an ESD detection circuit, a clamp circuit and an ESD assist circuit. The ESD detection circuit is coupled between a first and a second node. The first node has a first voltage. The second node has a second voltage. The clamp circuit includes a first transistor having a first gate, a first drain, a first source and a first body terminal. The first gate is coupled to at least the ESD detection circuit by a third node. The first drain is coupled to the second node. The first source and the first body terminal are coupled together at the first node. The ESD assist circuit is coupled between the first node and the third node, and is configured to clamp a third voltage of the third node at the first voltage during an ESD event at the first node or the second node.

公开(公告)号：US10263088B2

公开(公告)日：2019-04-16

申请号：US15860317

申请日：2018-01-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Sheng-Hsuan Lin ,  Chih-Wei Chang ,  You-Hua Chou ,  Chia-Lin Hsu

IPC分类号： H01L29/417 ,  H01L21/285 ,  H01L29/66 ,  H01L23/485 ,  H01L23/532 ,  H01L21/768 ,  H01L29/78 ,  H01L21/3205 ,  H01L21/02

摘要： Embodiments of the present disclosure include contact structures and methods of forming the same. An embodiment is a method of forming a semiconductor device, the method including forming a contact region over a substrate, forming a dielectric layer over the contact region and the substrate, and forming an opening through the dielectric layer to expose a portion of the contact region. The method further includes forming a metal-silicide layer on the exposed portion of the contact region and along sidewalls of the opening; and filling the opening with a conductive material to form a conductive plug in the dielectric layer, the conductive plug being electrically coupled to the contact region.

公开(公告)号：US20180145140A1

公开(公告)日：2018-05-24

申请号：US15860317

申请日：2018-01-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Sheng-Hsuan Lin ,  Chih-Wei Chang ,  You-Hua Chou ,  Chia-Lin Hsu

IPC分类号： H01L29/417 ,  H01L29/66 ,  H01L23/532 ,  H01L29/78 ,  H01L21/285 ,  H01L21/768 ,  H01L23/485 ,  H01L21/02

CPC分类号： H01L29/41791 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the present disclosure include contact structures and methods of forming the same. An embodiment is a method of forming a semiconductor device, the method including forming a contact region over a substrate, forming a dielectric layer over the contact region and the substrate, and forming an opening through the dielectric layer to expose a portion of the contact region. The method further includes forming a metal-silicide layer on the exposed portion of the contact region and along sidewalls of the opening; and filling the opening with a conductive material to form a conductive plug in the dielectric layer, the conductive plug being electrically coupled to the contact region.

公开(公告)号：US09589892B2

公开(公告)日：2017-03-07

申请号：US15160414

申请日：2016-05-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Mei-Hui Fu ,  Wei-Jung Lin ,  You-Hua Chou ,  Chia-Lin Hsu ,  Hon-Lin Huang ,  Shih-Chi Lin

IPC分类号： H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L21/3205 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L23/528 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877 ,  H01L21/76886 ,  H01L21/76889 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate, a dielectric layer over the contact layer, a silicide layer over the exposed portion of the contact layer, a barrier layer along sidewalls of the opening, an alloy layer over the barrier layer, a glue layer over the alloy layer, and a conductive plug over the glue layer, wherein the dielectric layer has an opening, and the opening exposes a portion of the contact layer.

摘要翻译： 公开了互连结构和形成互连结构的方法。 互连结构包括在衬底上的接触层，接触层上的电介质层，接触层的暴露部分上的硅化物层，沿着开口侧壁的阻挡层，阻挡层上的合金层，胶 层，并且在胶层上方具有导电塞，其中介电层具有开口，并且开口暴露接触层的一部分。