公开(公告)号：US11101178B2

公开(公告)日：2021-08-24

申请号：US16417050

申请日：2019-05-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Kuo-Sheng Chuang ,  You-Hua Chou ,  Yusuke Oniki

IPC: H01L21/82 ,  H01L27/08 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/02 ,  H01L27/092 ,  H01L21/8238

Abstract: A method including forming a first insulating film over a first fin structure. The method further includes removing the first insulating film to expose a portion of the first fin structure. The method further includes forming a first oxide film over the exposed portion of the first fin structure using a non-aqueous solvent-based chemical.

公开(公告)号：US10399231B2

公开(公告)日：2019-09-03

申请号：US15601079

申请日：2017-05-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： You-Hua Chou ,  Kuo-Sheng Chuang

IPC: B25J11/00 ,  H01L21/687 ,  H01L21/677

Abstract: A substrate handling device includes a substrate reception area defined by an edge. The substrate reception area includes a planar surface and a plurality of contact structures. At least one contact structure of the plurality of contact structures is located at the edge and at least one contact structure of the plurality of contact structures is located on the planar surface. The substrate reception area and planar surface are made of a first material. Each contact structure of the plurality of contact structures includes a second material different from the first material, the second material having a hardness aligned to a hardness of a substrate material.

公开(公告)号：US10297505B2

公开(公告)日：2019-05-21

申请号：US15877958

申请日：2018-01-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Kuo-Sheng Chuang ,  You-Hua Chou ,  Yusuke Oniki

IPC: H01L21/8234 ,  H01L27/092 ,  H01L27/088 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device includes forming a first insulating film over a first fin structure and a second insulating film over a second fin structure, coating a protective layer over the second insulating film, removing the first insulating film to expose a portion of the first fin structure, and forming a first oxide film over the exposed portion of the first fin structure using a non-aqueous solvent-based chemical.

公开(公告)号：US11819923B2

公开(公告)日：2023-11-21

申请号：US16943839

申请日：2020-07-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： You-Hua Chou ,  Kuo-Sheng Chuang

IPC: B22F9/28 ,  B22F1/0545 ,  H01L21/768 ,  H01L21/288 ,  C23C16/02 ,  C23C16/26

CPC classification number: B22F9/28 ,  C23C16/0281 ,  C23C16/26 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883 ,  B22F1/0545

Abstract: A method of forming a conductive powder includes reducing, by a reduction reaction, a conductive powder precursor gas using a plasma to form the conductive powder. The method further includes filtering the conductive powder based on particle size. The method further includes dispersing a portion of the conductive powder having a particle size below a threshold value in a fluid.

公开(公告)号：US11752638B2

公开(公告)日：2023-09-12

申请号：US17835921

申请日：2022-06-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： You-Hua Chou ,  Kuo-Sheng Chuang

IPC: B25J11/00 ,  H01L21/687 ,  H01L21/677 ,  B25J15/00

CPC classification number: B25J11/0095 ,  B25J15/0014 ,  H01L21/67766 ,  H01L21/6875 ,  H01L21/68707 ,  H01L21/68742 ,  H01L21/68757

Abstract: A substrate handling device includes a substrate reception area defined by an edge. The substrate reception area includes a planar surface, wherein the edge extends upward from the planar surface. The substrate reception area further includes a plurality of contact structures extending upwards from the planar surface, wherein a first contact structure of the plurality of contact structures directly contacts a side surface of the edge, a second contact structure of the plurality of contact structures separated from the edge, a shape of the first contact structure is different from a shape of the second contact structure. The substrate reception area and the planar surface include a first material. Each contact structure of the plurality of contact structures includes a second material different from the first material, and the second material has a hardness aligned to a hardness of a substrate material.

公开(公告)号：US11669014B2

公开(公告)日：2023-06-06

申请号：US17874317

申请日：2022-07-27

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： You-Hua Chou ,  Kuo-Sheng Chuang

IPC: G03F7/20 ,  G21G4/00 ,  G01T1/16

CPC classification number: G03F7/70008 ,  G01T1/16 ,  G03F7/7005 ,  G03F7/7085 ,  G03F7/70316 ,  G03F7/70558 ,  G21G4/00

Abstract: A gamma ray generator includes a rotational shaft, a plurality of holders and a plurality of gamma ray sources. The holders are connected to the rotational shaft. The gamma ray sources are disposed in the holders respectively, wherein the holders respectively have an upper portion and a lower portion connecting to the upper portion, and the gamma ray source is placed at an interface between the upper portion and the lower portion.

公开(公告)号：US20210341845A1

公开(公告)日：2021-11-04

申请号：US17378801

申请日：2021-07-19

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： You-Hua Chou ,  Kuo-Sheng Chuang

IPC: G03F7/20 ,  G01T1/16 ,  G21G4/00

Abstract: A gamma ray generator includes a plate, a plurality of holes and a plurality of gamma ray sources. The plate is configured to rotate along a rotational axis. The holes are disposed in the plate, and the holes are arranged in a matrix. The gamma ray sources are respectively placed in the holes.

公开(公告)号：US12109681B2

公开(公告)日：2024-10-08

申请号：US18357756

申请日：2023-07-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： You-Hua Chou ,  Kuo-Sheng Chuang

IPC: B25J11/00 ,  B25J15/00 ,  H01L21/677 ,  H01L21/687

CPC classification number: B25J11/0095 ,  B25J15/0014 ,  H01L21/67766 ,  H01L21/68707 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68757

Abstract: A substrate handling device includes a substrate reception area defined by an edge. The substrate reception area includes a planar surface, wherein the edge extends upward from the planar surface. The substrate reception area further includes a plurality of contact structures extending upwards from the planar surface, wherein a first contact structure of the plurality of contact structures directly contacts a side surface of the edge, and a second contact structure of the plurality of contact structures is separated from the edge. The substrate reception area and the planar surface include a first material. At least one contact structure of the plurality of contact structures includes a second material different from the first material, and the second material has a hardness aligned to a hardness of a substrate material.

公开(公告)号：US12027424B2

公开(公告)日：2024-07-02

申请号：US17388512

申请日：2021-07-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Kuo-Sheng Chuang ,  You-Hua Chou ,  Yusuke Oniki

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092

CPC classification number: H01L21/823462 ,  H01L21/02238 ,  H01L21/02282 ,  H01L21/823431 ,  H01L21/823468 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823857 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/0928

Abstract: A semiconductor integrated circuit (IC) including a first fin structure having a first aqueous soluble channel layer. The semiconductor IC includes a first gate structure over the first aqueous soluble channel layer, wherein the first gate structure includes a first oxide film directly contacting the first aqueous soluble channel layer, and the first oxide film includes a first material. The semiconductor IC includes a first spacer along the first gate structure, wherein a bottom surface of the first spacer is above an interface between the first oxide layer and the first aqueous soluble channel layer. The semiconductor IC includes a second fin structure having a second aqueous soluble channel layer. The semiconductor IC includes a second gate structure over the second aqueous channel layer, wherein the second gate structure includes a second oxide film directly contacting the second aqueous soluble channel layer, the second oxide film includes a second material.

公开(公告)号：US09536757B2

公开(公告)日：2017-01-03

申请号：US14020526

申请日：2013-09-06

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Albert Po Chia Chen ,  Kuo-Sheng Chuang ,  Chi-Ming Yang

IPC: B08B5/00 ,  H01L21/67 ,  H01L21/02 ,  B08B3/04

CPC classification number: H01L21/67051 ,  B08B3/04 ,  H01L21/02057 ,  H01L21/67028

Abstract: A cleaning method using vaporized solvent is provided. A solvent-containing vapor is generated, wherein the solvent-containing vapor comprises a solvent. The solvent-containing vapor is conducted to a substrate having debris or contaminants to clean the substrate, wherein the solvent-containing vapor condenses to form a liquid on a surface of the substrate. The liquid phase of the solvent-containing vapor is changed to a solid phase. The solid phase of the solvent-containing vapor is changed back to a liquid phase. The substrate is spun dried to remove the solvent-containing vapor in liquid phase and any debris or contaminants.

Abstract translation: 提供使用汽化溶剂的清洗方法。 产生含溶剂的蒸气，其中含溶剂的蒸气包含溶剂。 将含溶剂的蒸气传导至具有碎屑或污染物的基底以清洁基底，其中含溶剂的蒸气冷凝以在基底的表面上形成液体。 将含溶剂的蒸气的液相变成固相。 含有溶剂的蒸气的固相变回液相。 将基材旋转干燥以除去液相中含溶剂的蒸气和任何碎屑或污染物。