- 专利标题： Semiconductor device and fabrication method therefor
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申请号： US15877958申请日： 2018-01-23
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公开(公告)号： US10297505B2公开(公告)日： 2019-05-21
- 发明人: Kuo-Sheng Chuang , You-Hua Chou , Yusuke Oniki
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L27/092 ; H01L27/088 ; H01L21/02
摘要：
A method of manufacturing a semiconductor device includes forming a first insulating film over a first fin structure and a second insulating film over a second fin structure, coating a protective layer over the second insulating film, removing the first insulating film to expose a portion of the first fin structure, and forming a first oxide film over the exposed portion of the first fin structure using a non-aqueous solvent-based chemical.
公开/授权文献
- US20180315661A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR 公开/授权日：2018-11-01
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