公开(公告)号：US20180006765A1

公开(公告)日：2018-01-04

申请号：US15196711

申请日：2016-06-29

Applicant: Mapper Lithography IP B.V.

Inventor： Marco Jan-Jaco WIELAND

IPC: H04L1/00

CPC classification number: H04L1/0041 ,  H04L1/0058 ,  H04L25/49

Abstract: The present invention relates to a method and encoding device for encoding a sequence of m-bit pattern words and outputting as a bit-stream a frame comprising corresponding n-bit symbols as well as a predetermined comma symbol, wherein m

公开(公告)号：US20170221674A1

公开(公告)日：2017-08-03

申请号：US15493159

申请日：2017-04-21

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Alexander Hendrik Vincent VAN VEEN ,  Willem Henk URBANUS ,  Marco Jan-Jaco WIELAND

IPC: H01J37/18 ,  G21K1/02 ,  G21K5/04 ,  H01J37/30

Abstract: The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.

公开(公告)号：US20160370704A1

公开(公告)日：2016-12-22

申请号：US15250977

申请日：2016-08-30

Applicant: Mapper Lithography IP B.V.

Inventor： Hendrik Jan DE JONG ,  Marco Jan-Jaco WIELAND

IPC: G03F7/20 ,  H01L21/687

CPC classification number: G03F7/707 ,  H01L21/6838 ,  H01L21/68707 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68785 ,  Y10T29/49815 ,  Y10T29/49998 ,  Y10T29/53

Abstract: The invention relates to a substrate handling and exposure arrangement comprising a plurality of lithography apparatus, a clamp preparation unit for clamping a wafer on a wafer support structure, a wafer track, wherein the clamp preparation unit is configured for accepting a wafer from the wafer track, and an additional wafer track for transferring the clamp towards the plurality of lithography apparatus.

Abstract translation: 本发明涉及一种基板处理和曝光装置，其包括多个光刻设备，用于将晶片夹持在晶片支撑结构上的夹具准备单元，晶片轨道，其中夹具准备单元被配置为从晶片轨道接收晶片 ，以及用于将夹具转移到多个光刻设备的另外的晶片轨道。

公开(公告)号：US20140264085A1

公开(公告)日：2014-09-18

申请号：US14287241

申请日：2014-05-27

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Teunis VAN DE PEUT ,  Marco Jan-Jaco WIELAND

IPC: H01J37/317 ,  H01J37/30

CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70475 ,  G06T1/20 ,  G06T1/60 ,  H01J37/045 ,  H01J37/3002 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/3175 ,  H01J2237/31761 ,  H01J2237/31764 ,  H04N1/405

Abstract: A method for exposing a wafer according to pattern data using a charged particle lithography machine generating a plurality of charged particle beamlets for exposing the wafer. The method comprises providing the pattern data in a vector format, rendering the vector pattern data to generate multi-level pattern data, dithering the multi-level pattern data to generate two-level pattern data, supplying the two-level pattern data to the charged particle lithography machine, and switching on and off the beamlets generated by the charged particle lithography machine on the basis of the two-level pattern data, wherein the pattern data is adjusted on the basis of corrective data.

Abstract translation: 一种用于使用产生多个带电粒子子束的带电粒子光刻机根据图案数据曝光晶片的方法，用于暴露晶片。 该方法包括以矢量格式提供图形数据，渲染矢量图案数据以产生多电平图案数据，使多电平图案数据抖动以产生两电平图案数据，将两电平图案数据提供给带电 并且基于两级图案数据来打开和关闭由带电粒子光刻机产生的子束，其中基于校正数据调整图案数据。

公开(公告)号：US20140061497A1

公开(公告)日：2014-03-06

申请号：US14061847

申请日：2013-10-24

Applicant: Mapper Lithography IP B.V.

Inventor： Laura DINU-GÜRTLER ,  Willem Henk URBANUS ,  Marco Jan-Jaco WIELAND ,  Stijn Willem Herman Karel STEENBRINK

IPC: H01J37/317

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/16 ,  H01J37/18 ,  H01J37/301 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/188

Abstract: A charged particle lithography system for transferring a pattern onto the surface of a target, comprising a source for generating a charged particle beam, a first chamber housing the source, a collimating system for collimating the charged particle beam, a second chamber housing the collimating system, and a first aperture array element for generating a plurality of charged particle subbeams from the collimated charged particle beam.

Abstract translation: 一种用于将图案转印到目标表面上的带电粒子光刻系统，包括用于产生带电粒子束的源，容纳源的第一室，用于准直带电粒子束的准直系统;容纳准直系统的第二室 以及用于从准直带电粒子束产生多个带电粒子子束的第一孔阵列元件。

公开(公告)号：US20180277334A1

公开(公告)日：2018-09-27

申请号：US15985763

申请日：2018-05-22

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Alexander Hendrik Vincent VAN VEEN ,  Willem Henk URBANUS ,  Marco Jan-Jaco WIELAND

IPC: H01J37/153 ,  H01J37/12 ,  H01J37/09

CPC classification number: H01J37/153 ,  H01J37/023 ,  H01J37/065 ,  H01J37/09 ,  H01J37/12 ,  H01J37/3177 ,  H01J2237/0213 ,  H01J2237/0264 ,  H01J2237/0453 ,  H01J2237/1207 ,  H01J2237/1534 ,  H01J2237/1825 ,  H01J2237/188 ,  H01J2237/31774 ,  H01J2237/31793

Abstract: A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking part of a charged particle beam passing through the central opening of said electrode. The electrode is configured to operate at a first electric potential and the aperture array is configured to operate at a second electric potential different from the first electric potential. The electrode and the aperture array together form an aberration correcting lens.

公开(公告)号：US20180006668A1

公开(公告)日：2018-01-04

申请号：US15198487

申请日：2016-06-30

Applicant: Mapper Lithography IP B.V.

Inventor： Marco Jan-Jaco WIELAND

IPC: H03M13/29 ,  H04L1/00 ,  H04L27/227

CPC classification number: H03M13/2927 ,  H03M5/00 ,  H04L1/0041 ,  H04L1/0045 ,  H04L27/2278

Abstract: The invention relates to a invention relates to a method and decoding device for receiving an input bit-stream comprising a sequence of n-bit pattern symbols as well as a unique n-bit comma symbol for synchronization, and for generating therefrom a synchronized output comprising a sequence of m-bit pattern words, with m

公开(公告)号：US20150137010A1

公开(公告)日：2015-05-21

申请号：US14541238

申请日：2014-11-14

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Willem Henk URBANUS ,  Marco Jan-Jaco WIELAND

IPC: H01J37/02 ,  H01J37/317 ,  H01J37/30 ,  H01J37/16

CPC classification number: G21K1/02 ,  G21K5/04 ,  H01J37/026 ,  H01J37/065 ,  H01J37/12 ,  H01J37/16 ,  H01J37/24 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/0216 ,  H01J2237/024 ,  H01J2237/032 ,  H01J2237/04 ,  H01J2237/1215 ,  H01J2237/16 ,  H01J2237/1825 ,  H01J2237/303 ,  H01J2237/30472

Abstract: The invention relates to an electrode stack (70) comprising stacked electrodes (71-80) for manipulating a charged particle beam along an optical axis (A). Each electrode comprises an electrode body with an aperture for the charged particle beam. The electrode bodies are mutually spaced and the electrode apertures are coaxially aligned along the optical axis. The electrode stack comprises electrically insulating spacing structures (89) between each pair of adjacent electrodes for positioning the electrodes (71-80) at predetermined mutual distances along the axial direction (Z). A first electrode and a second electrode each comprise an electrode body with one or more support portions (86), wherein each support portion is configured to accommodate at least one spacing structure (89). The electrode stack has at least one clamping member (91-91c) configured to hold the support portions (86) of the first and second electrodes, as well as the intermediate spacing structure (89) together.

Abstract translation: 本发明涉及一种电极堆叠（70），其包括用于沿光轴（A）操纵带电粒子束的堆叠电极（71-80）。 每个电极包括具有用于带电粒子束的孔的电极体。 电极体相互间隔开，并且电极孔沿光轴同轴对准。 电极堆叠包括在每对相邻电极之间的电绝缘间隔结构（89），用于将电极（71-80）沿着轴向方向（Z）定位在预定的相互距离处。 第一电极和第二电极各自包括具有一个或多个支撑部分（86）的电极主体，其中每个支撑部分构造成容纳至少一个间隔结构（89）。 电极堆叠具有至少一个构造成将第一和第二电极的支撑部分（86）以及中间间隔结构（89）保持在一起的夹紧构件（91-91c）。

公开(公告)号：US20150137009A1

公开(公告)日：2015-05-21

申请号：US14541236

申请日：2014-11-14

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Willem Henk URBANUS ,  Marco Jan-Jaco WIELAND

IPC: H01J37/30 ,  H01J37/24 ,  H01J37/317

CPC classification number: G21K1/02 ,  G21K5/04 ,  H01J37/026 ,  H01J37/065 ,  H01J37/12 ,  H01J37/16 ,  H01J37/24 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/0216 ,  H01J2237/024 ,  H01J2237/032 ,  H01J2237/04 ,  H01J2237/1215 ,  H01J2237/16 ,  H01J2237/1825 ,  H01J2237/303 ,  H01J2237/30472

Abstract: The invention relates to a collimator electrode, comprising an electrode body (81) that is provided with a central electrode aperture (82), wherein the electrode body defines an electrode height between two opposite main surfaces, and wherein the electrode body accommodates a cooling conduit (105) inside the electrode body for transferring a cooling liquid (102). The electrode body preferably has a disk shape or an oblate ring shape.The invention further relates to a collimator electrode stack for use in a charged particle beam generator, comprising a first collimator electrode and a second collimator electrode that are each provided with a cooling conduit (105) for transferring the cooling liquid (102), and a connecting conduit (110) for a liquid connection between the cooling conduits of the first and second collimator electrodes.

Abstract translation: 本发明涉及一种准直器电极，包括设置有中心电极孔（82）的电极体（81），其中电极体限定两个相对的主表面之间的电极高度，并且其中电极体容纳冷却导管 （105），用于传送冷却液（102）。 电极体优选具有盘状或扁圆形状。 本发明还涉及一种用于带电粒子束发生器的准直器电极叠层，其包括第一准直器电极和第二准直器电极，每个准直器电极和第二准直器电极都设置有用于传送冷却液体（102）的冷却导管（105） 连接导管（110）用于第一和第二准直仪电极的冷却管道之间的液体连接。

公开(公告)号：US20140264066A1

公开(公告)日：2014-09-18

申请号：US14287238

申请日：2014-05-27

Applicant: Mapper Lithography IP B.V.

Inventor： Teunis VAN DE PEUT ,  Marco Jan-Jaco WIELAND

IPC: H01J37/317

Abstract: A method for exposing a wafer in a charged particle lithography system. The method comprises generating a plurality of charged particle beamlets, the beamlets arranged in groups, each group comprising an array of beamlets; moving the wafer under the beamlets in a first direction at a wafer scan speed; deflecting the beamlets in a second direction substantially perpendicular to the first direction at a deflection scan speed, and adjusting the deflection scan speed to adjust a dose imparted by the beamlets on the wafer.

Abstract translation: 一种用于在带电粒子光刻系统中曝光晶片的方法。 该方法包括产生多个带电粒子子束，子束以组的形式排列，每组包括子束阵列; 以晶圆扫描速度在第一方向下移动晶片在子束之下; 在偏转扫描速度下，以基本上垂直于第一方向的第二方向偏转子束，并且调整偏转扫描速度以调整由晶片上的子束赋予的剂量。