Abstract:
A method for exposing a wafer in a charged particle lithography system. The method comprises generating a plurality of charged particle beamlets, the beamlets arranged in groups, each group comprising an array of beamlets; moving the wafer under the beamlets in a first direction at a wafer scan speed; deflecting the beamlets in a second direction substantially perpendicular to the first direction at a deflection scan speed, and adjusting the deflection scan speed to adjust a dose imparted by the beamlets on the wafer.
Abstract:
A method for forming an optical fiber array. A substrate having a first surface and an opposing second surface is provided. The substrate is provided with a plurality of apertures extending through the substrate from the first surface to the second surface. In addition, a plurality of fibers are provided. The fibers have fiber ends with a diameter smaller than the smallest diameter of the apertures. A first fiber is inserted in a first corresponding aperture, from the first surface side of the substrate, such that the fiber end is positioned in close proximity of the second surface. The inserted first fiber is bent in a predetermined direction such that the fiber abuts a side wall of the first aperture at a predetermined position. After the first fiber is bent, a second fiber is inserted in a second corresponding aperture, from the first surface side of the substrate, such that the fiber end is positioned in close proximity of the second surface. The inserted second fiber is bent in conformity with a shape of the first fiber, such that the fiber abuts a side wall of the second aperture at a predetermined position. The bent fibers are bonded together using an adhesive material.
Abstract:
A charged particle lithography system for exposing a wafer according to pattern data. The system comprises an electron optical column for generating a plurality of electron beamlets for exposing the wafer, the electron optical column including a beamlet blanker array for switching the beamlets on or off, a data path for transmitting beamlet control data for control of the switching of the beamlets, and a wafer positioning system for moving the wafer under the electron optical column in a scan direction. The wafer positioning system is provided with synchronization signals from the data path to align the wafer with the electron beams from the electron-optical column. The data path further comprises one or more processing units for generating the beamlet control data and one or more transmission channels for transmitting the beamlet control data to the beamlet blanker array.
Abstract:
A method for exposing a wafer according to pattern data using a charged particle lithography machine generating a plurality of charged particle beamlets for exposing the wafer. The method comprises providing the pattern data in a vector format, rendering the vector pattern data to generate multi-level pattern data, dithering the multi-level pattern data to generate two-level pattern data, supplying the two-level pattern data to the charged particle lithography machine, and switching on and off the beamlets generated by the charged particle lithography machine on the basis of the two-level pattern data, wherein the pattern data is adjusted on the basis of corrective data.