DEFLECTION SCAN SPEED ADJUSTMENT DURING CHARGED PARTICLE EXPOSURE
    1.
    发明申请
    DEFLECTION SCAN SPEED ADJUSTMENT DURING CHARGED PARTICLE EXPOSURE 审中-公开
    在充电颗粒暴露期间的偏转扫描速度调节

    公开(公告)号:US20140264066A1

    公开(公告)日:2014-09-18

    申请号:US14287238

    申请日:2014-05-27

    Abstract: A method for exposing a wafer in a charged particle lithography system. The method comprises generating a plurality of charged particle beamlets, the beamlets arranged in groups, each group comprising an array of beamlets; moving the wafer under the beamlets in a first direction at a wafer scan speed; deflecting the beamlets in a second direction substantially perpendicular to the first direction at a deflection scan speed, and adjusting the deflection scan speed to adjust a dose imparted by the beamlets on the wafer.

    Abstract translation: 一种用于在带电粒子光刻系统中曝光晶片的方法。 该方法包括产生多个带电粒子子束,子束以组的形式排列,每组包括子束阵列; 以晶圆扫描速度在第一方向下移动晶片在子束之下; 在偏转扫描速度下,以基本上垂直于第一方向的第二方向偏转子束,并且调整偏转扫描速度以调整由晶片上的子束赋予的剂量。

    Method for forming an optical fiber array
    2.
    发明申请
    Method for forming an optical fiber array 有权
    光纤阵列形成方法

    公开(公告)号:US20150190994A1

    公开(公告)日:2015-07-09

    申请号:US14662346

    申请日:2015-03-19

    Abstract: A method for forming an optical fiber array. A substrate having a first surface and an opposing second surface is provided. The substrate is provided with a plurality of apertures extending through the substrate from the first surface to the second surface. In addition, a plurality of fibers are provided. The fibers have fiber ends with a diameter smaller than the smallest diameter of the apertures. A first fiber is inserted in a first corresponding aperture, from the first surface side of the substrate, such that the fiber end is positioned in close proximity of the second surface. The inserted first fiber is bent in a predetermined direction such that the fiber abuts a side wall of the first aperture at a predetermined position. After the first fiber is bent, a second fiber is inserted in a second corresponding aperture, from the first surface side of the substrate, such that the fiber end is positioned in close proximity of the second surface. The inserted second fiber is bent in conformity with a shape of the first fiber, such that the fiber abuts a side wall of the second aperture at a predetermined position. The bent fibers are bonded together using an adhesive material.

    Abstract translation: 一种形成光纤阵列的方法。 提供具有第一表面和相对的第二表面的基板。 衬底设置有从第一表面延伸穿过衬底到第二表面的多个孔。 另外,提供多根纤维。 纤维具有直径小于孔的最小直径的纤维端。 第一光纤从衬底的第一表面侧插入到第一对应的孔中,使得光纤端位于紧邻第二表面的位置。 所插入的第一纤维沿预定方向弯曲,使得纤维在预定位置处抵靠第一孔的侧壁。 在第一纤维弯曲之后,第二纤维从衬底的第一表面侧插入到第二对应的孔中,使得光纤端位于紧邻第二表面的位置。 插入的第二纤维与第一纤维的形状一致地弯曲,使得纤维在预定位置处抵靠第二孔的侧壁。 弯曲的纤维使用粘合剂材料粘合在一起。

    CHARGED PARTICLE LITHOGRAPHY SYSTEM
    3.
    发明申请
    CHARGED PARTICLE LITHOGRAPHY SYSTEM 审中-公开
    充电粒子光刻系统

    公开(公告)号:US20140264086A1

    公开(公告)日:2014-09-18

    申请号:US14287234

    申请日:2014-05-27

    Abstract: A charged particle lithography system for exposing a wafer according to pattern data. The system comprises an electron optical column for generating a plurality of electron beamlets for exposing the wafer, the electron optical column including a beamlet blanker array for switching the beamlets on or off, a data path for transmitting beamlet control data for control of the switching of the beamlets, and a wafer positioning system for moving the wafer under the electron optical column in a scan direction. The wafer positioning system is provided with synchronization signals from the data path to align the wafer with the electron beams from the electron-optical column. The data path further comprises one or more processing units for generating the beamlet control data and one or more transmission channels for transmitting the beamlet control data to the beamlet blanker array.

    Abstract translation: 一种用于根据图案数据曝光晶片的带电粒子光刻系统。 该系统包括用于产生用于暴露晶片的多个电子子束的电子光学柱,该电子光学柱包括用于开启或关闭子束的子束遮蔽器阵列,用于发射用于控制切换的子束控制数据的数据路径 子束,以及用于在扫描方向上移动电子光学柱下的晶片的晶片定位系统。 晶圆定位系统具有来自数据通路的同步信号,以将晶片与来自电子 - 光学柱的电子束对准。 数据路径还包括用于产生子束控制数据的一个或多个处理单元和用于将子束控制数据发送到子束消隐器阵列的一个或多个传输信道。

    METHOD FOR EXPOSING A WAFER
    4.
    发明申请
    METHOD FOR EXPOSING A WAFER 审中-公开
    曝光方法

    公开(公告)号:US20140264085A1

    公开(公告)日:2014-09-18

    申请号:US14287241

    申请日:2014-05-27

    Abstract: A method for exposing a wafer according to pattern data using a charged particle lithography machine generating a plurality of charged particle beamlets for exposing the wafer. The method comprises providing the pattern data in a vector format, rendering the vector pattern data to generate multi-level pattern data, dithering the multi-level pattern data to generate two-level pattern data, supplying the two-level pattern data to the charged particle lithography machine, and switching on and off the beamlets generated by the charged particle lithography machine on the basis of the two-level pattern data, wherein the pattern data is adjusted on the basis of corrective data.

    Abstract translation: 一种用于使用产生多个带电粒子子束的带电粒子光刻机根据图案数据曝光晶片的方法,用于暴露晶片。 该方法包括以矢量格式提供图形数据,渲染矢量图案数据以产生多电平图案数据,使多电平图案数据抖动以产生两电平图案数据,将两电平图案数据提供给带电 并且基于两级图案数据来打开和关闭由带电粒子光刻机产生的子束,其中基于校正数据调整图案数据。

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