- 专利标题: ABERRATION CORRECTION IN CHARGED PARTICLE SYSTEM
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申请号: US15985763申请日: 2018-05-22
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公开(公告)号: US20180277334A1公开(公告)日: 2018-09-27
- 发明人: Alexander Hendrik Vincent VAN VEEN , Willem Henk URBANUS , Marco Jan-Jaco WIELAND
- 申请人: MAPPER LITHOGRAPHY IP B.V.
- 主分类号: H01J37/153
- IPC分类号: H01J37/153 ; H01J37/12 ; H01J37/09
摘要:
A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking part of a charged particle beam passing through the central opening of said electrode. The electrode is configured to operate at a first electric potential and the aperture array is configured to operate at a second electric potential different from the first electric potential. The electrode and the aperture array together form an aberration correcting lens.
公开/授权文献
- US11348756B2 Aberration correction in charged particle system 公开/授权日:2022-05-31
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