公开(公告)号：US20160155705A1

公开(公告)日：2016-06-02

申请号：US15004774

申请日：2016-01-22

申请人： Intel Corporation

发明人： Ravindranath V. Mahajan ,  Christopher J. Nelson ,  Omkar G. Karhade ,  Feras Eid ,  Nitin A. Deshpande ,  Shawna M. Liff

IPC分类号： H01L23/538 ,  H01L23/367 ,  H01L21/56

CPC分类号： H01L23/5381 ,  H01L21/563 ,  H01L21/568 ,  H01L23/145 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/24 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/165 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16265 ,  H01L2224/17181 ,  H01L2224/24145 ,  H01L2224/24245 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/2912 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/92124 ,  H01L2224/92224 ,  H01L2224/92242 ,  H01L2224/92244 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/12042 ,  H01L2924/1432 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/0665

摘要： Embodiments of the present disclosure are directed towards an integrated circuit (IC) package having first and second dies with first and second input/output (I/O) interconnect structures, respectively. The IC package may include a bridge having first and second electrical routing features coupled to a portion of the first and second I/O interconnect structures, respectively. In embodiments, the first and second electrical routing features may be disposed on one side of the bridge; and third electrical routing features may be disposed on an opposite side. The first and second electrical routing features may be configured to route electrical signals between the first die and the second die and the third electrical routing features may be configured to route electrical signals between the one side and the opposite side. The first die, the second die, and the bridge may be embedded in electrically insulating material. Other embodiments may be described and/or claimed.

公开(公告)号：US09972611B2

公开(公告)日：2018-05-15

申请号：US15475879

申请日：2017-03-31

申请人： Intel Corporation

发明人： Lakshminarayana Pappu ,  Baruch Schnarch ,  Christopher J. Nelson ,  Danka Goldin Schwabova

IPC分类号： H01L25/18 ,  H01L25/065 ,  H01L21/66 ,  G11C11/4093 ,  G11C11/4076 ,  G11C29/00 ,  G11C11/4096

CPC分类号： H01L25/18 ,  G11C5/025 ,  G11C11/4096 ,  G11C29/025 ,  G11C29/1201 ,  G11C29/48 ,  G11C29/78 ,  H01L22/22 ,  H01L22/32 ,  H01L25/0657 ,  H01L2225/06527 ,  H01L2225/06544 ,  H01L2225/06596

摘要： A stacked semiconductor package comprising a functional silicon die having embedded thereupon a Wide Input/Output 2 (WIO2) interface, and two or more memory dies forming a corresponding two or more memory layers of the stacked semiconductor package. A plurality of Through Silicon Vias (TSVs) are formed through the two or more memory dies, wherein each of the plurality of TSVs traverse through the two or more memory layers to the functional silicon die via the WIO2 interface of the functional silicon die. A test port interface receives test signals from an external tester and routes the test signals through a steering logic communicably interfaced with the two or more memory dies. The steering logic shifts data into and out of the two or more memory dies through the plurality of TSVs.

公开(公告)号：US10249597B2

公开(公告)日：2019-04-02

申请号：US15283055

申请日：2016-09-30

申请人： Intel Corporation

发明人： Lakshminarayana Pappu ,  Kalyan C. Kolluru ,  Pete D. Vogt ,  Christopher J. Nelson ,  Amande B. Trang ,  Uddalak Bhattacharya

IPC分类号： G11C5/06 ,  H01L25/065 ,  H01L25/18 ,  G11C5/02 ,  G11C29/02 ,  G11C29/12 ,  G11C29/48 ,  G11C29/00

摘要： Systems, methods, and apparatuses for implementing die recovery in Two-Level Memory (2LM) stacked die subsystems are described. A stacked semiconductor package includes a processor functional silicon die at a first layer of the stacked semiconductor package; one or more memory dies forming a corresponding one or more memory layers of the stacked semiconductor package; a plurality of Through Silicon Vias (TSV s) formed through the one or more memory dies; a plurality of physical memory interfaces electrically interfacing the one or more memory dies to the processor functional silicon die at the first layer through the memory layers via the plurality of TSVs; and a redundant physical memory interface formed by a redundant TSV traversing through the memory layers to the processor functional silicon die at the first layer through which to reroute a memory signal path from a defective physical memory interface at a defective TSV to a functional signal path traversing the redundant TSV.

公开(公告)号：US09275955B2

公开(公告)日：2016-03-01

申请号：US14132774

申请日：2013-12-18

申请人： INTEL CORPORATION

发明人： Ravindranath V. Mahajan ,  Christopher J. Nelson ,  Omkar G. Karhade ,  Feras Eid ,  Nitin A. Deshpande ,  Shawna M. Liff

IPC分类号： H01L23/28 ,  H01L23/538 ,  H01L25/00 ,  H01L25/16 ,  H01L23/00 ,  H01L23/367 ,  H01L23/14 ,  H01L23/31 ,  H01L23/433 ,  H01L23/498 ,  H01L21/56

CPC分类号： H01L23/5381 ,  H01L21/563 ,  H01L21/568 ,  H01L23/145 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/24 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/165 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16265 ,  H01L2224/17181 ,  H01L2224/24145 ,  H01L2224/24245 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/2912 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/92124 ,  H01L2224/92224 ,  H01L2224/92242 ,  H01L2224/92244 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/12042 ,  H01L2924/1432 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/0665

摘要： Embodiments of the present disclosure are directed towards an integrated circuit (IC) package having first and second dies with first and second input/output (I/O) interconnect structures, respectively. The IC package may include a bridge having first and second electrical routing features coupled to a portion of the first and second I/O interconnect structures, respectively. In embodiments, the first and second electrical routing features may be disposed on one side of the bridge; and third electrical routing features may be disposed on an opposite side. The first and second electrical routing features may be configured to route electrical signals between the first die and the second die and the third electrical routing features may be configured to route electrical signals between the one side and the opposite side. The first die, the second die, and the bridge may be embedded in electrically insulating material. Other embodiments may be described and/or claimed.

摘要翻译： 本公开的实施例涉及具有分别具有第一和第二输入/输出（I / O）互连结构的第一和第二裸片的集成电路（IC）封装。 IC封装可以包括具有分别耦合到第一和第二I / O互连结构的一部分的第一和第二电路由特征的桥。 在实施例中，第一和第二电路由特征可以设置在桥的一侧; 并且第三电路布线特征可以设置在相对侧上。 第一和第二电路由特征可以被配置为在第一管芯和第二管芯之间路由电信号，并且第三电路由特征可以被配置为在一侧和相对侧之间路由电信号。 第一管芯，第二管芯和桥可以嵌入电绝缘材料中。 可以描述和/或要求保护其他实施例。

公开(公告)号：US20150163904A1

公开(公告)日：2015-06-11

申请号：US14102757

申请日：2013-12-11

申请人： Intel Corporation

发明人： Omkar G. Karhade ,  John S. Guzek ,  Johanna M. Swan ,  Christopher J. Nelson ,  Nitin A. Deshpande ,  William J. Lambert ,  Charles A. Gealer ,  Feras Eid ,  Islam A. Salama ,  Kemal Aygun ,  Sasha N. Oster ,  Tyler N. Osborn

IPC分类号： H05K1/11 ,  H05K1/18 ,  H05K3/40 ,  G06F1/18

CPC分类号： H01L25/16 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5387 ,  H01L24/50 ,  H01L24/86 ,  H01L25/00 ,  H01L25/0655 ,  H01L2224/0405 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/05647 ,  H01L2224/29078 ,  H01L2224/86203 ,  H01L2224/86815 ,  H05K1/185 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/014

摘要： A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.

摘要翻译： 本说明书的微电子封装可以包括具有与其电连接的至少一行连接结构的第一微电子器件和具有与其电连接的至少一排连接结构的第二微电子器件，其中所述至少一个 第一微电子器件行与X方向上的至少一个第二微电子器件行内的对应连接结构对准。 包括具有在互连衬底的第一表面上沿x方向延伸的多个电隔离导电迹线的互连衬底的互连可以附接到所述至少一个第一微电子器件连接结构行和所述至少一个第二微电子器件 连接结构行，使得至少一个互连导电迹线形成第一微电子器件连接结构与其对应的第二微电子器件连接结构之间的连接。

公开(公告)号：US10068852B2

公开(公告)日：2018-09-04

申请号：US15636117

申请日：2017-06-28

申请人： Intel Corporation

发明人： Ravindranath V. Mahajan ,  Christopher J. Nelson ,  Omkar G. Karhade ,  Feras Eid ,  Nitin A. Deshpande ,  Shawna M. Liff

IPC分类号： H01L23/538 ,  H01L25/065 ,  H01L23/367 ,  H01L23/31

摘要： Embodiments of the present disclosure are directed towards an integrated circuit (IC) package having first and second dies with first and second input/output (I/O) interconnect structures, respectively. The IC package may include a bridge having first and second electrical routing features coupled to a portion of the first and second I/O interconnect structures, respectively. In embodiments, the first and second electrical routing features may be disposed on one side of the bridge; and third electrical routing features may be disposed on an opposite side. The first and second electrical routing features may be configured to route electrical signals between the first die and the second die and the third electrical routing features may be configured to route electrical signals between the one side and the opposite side. The first die, the second die, and the bridge may be embedded in electrically insulating material. Other embodiments may be described and/or claimed.

公开(公告)号：US09716067B2

公开(公告)日：2017-07-25

申请号：US15004774

申请日：2016-01-22

申请人： Intel Corporation

发明人： Ravindranath V. Mahajan ,  Christopher J. Nelson ,  Omkar G. Karhade ,  Feras Eid ,  Nitin A. Deshpande ,  Shawna M. Liff

IPC分类号： H01L23/538 ,  H01L25/00 ,  H01L25/16 ,  H01L23/367 ,  H01L23/00 ,  H01L21/56 ,  H01L23/14 ,  H01L23/31 ,  H01L23/433 ,  H01L23/498

CPC分类号： H01L23/5381 ,  H01L21/563 ,  H01L21/568 ,  H01L23/145 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/24 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/165 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16265 ,  H01L2224/17181 ,  H01L2224/24145 ,  H01L2224/24245 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/2912 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/92124 ,  H01L2224/92224 ,  H01L2224/92242 ,  H01L2224/92244 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/12042 ,  H01L2924/1432 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/0665

摘要： Embodiments of the present disclosure are directed towards an integrated circuit (IC) package having first and second dies with first and second input/output (I/O) interconnect structures, respectively. The IC package may include a bridge having first and second electrical routing features coupled to a portion of the first and second I/O interconnect structures, respectively. In embodiments, the first and second electrical routing features may be disposed on one side of the bridge; and third electrical routing features may be disposed on an opposite side. The first and second electrical routing features may be configured to route electrical signals between the first die and the second die and the third electrical routing features may be configured to route electrical signals between the one side and the opposite side. The first die, the second die, and the bridge may be embedded in electrically insulating material. Other embodiments may be described and/or claimed.

公开(公告)号：US09397071B2

公开(公告)日：2016-07-19

申请号：US14102757

申请日：2013-12-11

申请人： Intel Corporation

发明人： Omkar G. Karhade ,  John S. Guzek ,  Johanna M. Swan ,  Christopher J. Nelson ,  Nitin A. Deshpande ,  William J. Lambert ,  Charles A. Gealer ,  Feras Eid ,  Islam A. Salama ,  Kemal Aygun ,  Sasha N. Oster ,  Tyler N. Osborn

IPC分类号： H05K7/00 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L23/538 ,  H05K1/18

CPC分类号： H01L25/16 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5387 ,  H01L24/50 ,  H01L24/86 ,  H01L25/00 ,  H01L25/0655 ,  H01L2224/0405 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/05647 ,  H01L2224/29078 ,  H01L2224/86203 ,  H01L2224/86815 ,  H05K1/185 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/014

摘要： A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.

摘要翻译： 本说明书的微电子封装可以包括具有与其电连接的至少一行连接结构的第一微电子器件和具有与其电连接的至少一排连接结构的第二微电子器件，其中所述至少一个 第一微电子器件行与X方向上的至少一个第二微电子器件行内的对应连接结构对准。 包括具有在互连衬底的第一表面上沿x方向延伸的多个电隔离导电迹线的互连衬底的互连可以附接到所述至少一个第一微电子器件连接结构行和所述至少一个第二微电子器件 连接结构行，使得至少一个互连导电迹线形成第一微电子器件连接结构与其对应的第二微电子器件连接结构之间的连接。

公开(公告)号：US11193975B2

公开(公告)日：2021-12-07

申请号：US16024722

申请日：2018-06-29

申请人： Intel Corporation

发明人： Christopher J. Nelson ,  Shelby G. Rollins ,  Hiren V. Tilala ,  Matthew Hendricks ,  Sundar V. Pathy ,  Timothy J. Callahan ,  Jared Pager ,  James Neeb ,  Bradly Inman ,  Stephen Sturges

IPC分类号： G01R31/3183 ,  G01R31/3185 ,  G01R31/316 ,  G01R31/317

摘要： Embodiments herein relate to apparatus, systems, and methods to compress a test pattern onto a field programmable gate array to test a device under test. This may include identifying values of a plurality of drive pins for a plurality of test cycles to apply to an input of the DUT for each of the plurality of test cycles, identifying values of a plurality of compare pins for the plurality of test cycles to compare an output of the DUT, respectively, for each of the plurality of test cycles, analyzing the identified values, compressing, based on the analysis, the values of the plurality of drive pins and the plurality of compare pins, and storing the compressed values on the FPGA.

公开(公告)号：US09842832B2

公开(公告)日：2017-12-12

申请号：US15183179

申请日：2016-06-15

申请人： Intel Corporation

发明人： Omkar G. Karhade ,  John S. Guzek ,  Johanna M. Swan ,  Christopher J. Nelson ,  Nitin A. Deshpande ,  William J. Lambert ,  Charles A. Gealer ,  Feras Eid ,  Islam A. Salama ,  Kemal Aygun ,  Sasha N. Oster ,  Tyler N. Osborn

IPC分类号： H01L25/16 ,  H01L23/538 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H05K1/18

CPC分类号： H01L25/16 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5387 ,  H01L24/50 ,  H01L24/86 ,  H01L25/00 ,  H01L25/0655 ,  H01L2224/0405 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/05647 ,  H01L2224/29078 ,  H01L2224/86203 ,  H01L2224/86815 ,  H05K1/185 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/014

摘要： A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.