Invention Grant
- Patent Title: High density interconnection of microelectronic devices
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Application No.: US15183179Application Date: 2016-06-15
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Publication No.: US09842832B2Publication Date: 2017-12-12
- Inventor: Omkar G. Karhade , John S. Guzek , Johanna M. Swan , Christopher J. Nelson , Nitin A. Deshpande , William J. Lambert , Charles A. Gealer , Feras Eid , Islam A. Salama , Kemal Aygun , Sasha N. Oster , Tyler N. Osborn
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP.
- Agent Robert G. Winkle
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L23/538 ; H01L25/065 ; H01L23/00 ; H01L25/00 ; H05K1/18

Abstract:
A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.
Public/Granted literature
- US20160300824A1 HIGH DENSITY INTERCONNECTION OF MICROELECTRONIC DEVICES Public/Granted day:2016-10-13
Information query
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