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    Multi-composition gate dielectric field effect transistors
    1.
    发明授权
    Multi-composition gate dielectric field effect transistors 有权
    多组合栅介质场效应晶体管

    公开(公告)号：US09397175B2

    公开(公告)日：2016-07-19

    申请号：US14881766

    申请日：2015-10-13

    申请人： GLOBALFOUNDRIES INC.

    发明人： Emre Alptekin ,  Unoh Kwon ,  Wing L. Lai ,  Zhengwen Li ,  Vijay Narayanan ,  Ravikumar Ramachandran ,  Reinaldo A. Vega

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/40 ,  H01L29/51 ,  H01L27/088 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/49

    CPC分类号： H01L29/408 ,  H01L21/82345 ,  H01L21/823462 ,  H01L27/088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659

    摘要： A first gate structure and a second gate structure are formed over a semiconductor material layer. The first gate structure includes a planar silicon-based gate dielectric, a planar high-k gate dielectric, a metallic nitride portion, and a first semiconductor material portion, and the second gate structure includes a silicon-based dielectric material portion and a second semiconductor material portion. After formation of gate spacers and a planarization dielectric layer, the second gate structure is replaced with a transient gate structure including a chemical oxide portion and a second high-k gate dielectric. A work-function metal layer and a conductive material portion can be formed in each gate electrode by replacement of semiconductor material portions. A gate electrode includes the planar silicon-based gate dielectric, the planar high-k gate dielectric, and a U-shaped high-k gate dielectric, and another gate electrode includes the chemical oxide portion and another U-shaped high-k gate dielectric.

    摘要翻译： 在半导体材料层上形成第一栅极结构和第二栅极结构。 第一栅极结构包括平面硅基栅极电介质，平面高k栅极电介质，金属氮化物部分和第一半导体材料部分，并且第二栅极结构包括硅基电介质材料部分和第二半导体 材料部分。 在形成栅极间隔物和平坦化介电层之后，用包括化学氧化物部分和第二高k栅极电介质的瞬态栅极结构来代替第二栅极结构。 可以通过更换半导体材料部分在每个栅电极中形成功函数金属层和导电材料部分。 栅电极包括平面硅基栅极电介质，平面高k栅极电介质和U形高k栅极电介质，另一个栅电极包括化学氧化物部分和另一个U形高k栅极电介质 。

    Self-aligned contact for replacement gate devices
    2.
    发明授权
    Self-aligned contact for replacement gate devices 有权
    更换门装置的自对准触点

    公开(公告)号：US09214541B2

    公开(公告)日：2015-12-15

    申请号：US13780912

    申请日：2013-02-28

    申请人： GLOBALFOUNDRIES INC.

    发明人： Ravikumar Ramachandran ,  Ying Li ,  Richard S. Wise

    IPC分类号： H01L21/00 ,  H01L29/78 ,  H01L21/768 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51

    CPC分类号： H01L29/78 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823842 ,  H01L21/823871 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/7833 ,  H01L29/7843

    摘要： A conductive top surface of a replacement gate stack is recessed relative to a top surface of a planarization dielectric layer by at least one etch. A dielectric capping layer is deposited over the planarization dielectric layer and the top surface of the replacement gate stack so that the top surface of a portion of the dielectric capping layer over the replacement gate stack is vertically recessed relative to another portion of the dielectric layer above the planarization dielectric layer. The vertical offset of the dielectric capping layer can be employed in conjunction with selective via etch processes to form a self-aligned contact structure.

    摘要翻译： 替代栅极堆叠的导电顶表面通过至少一个蚀刻相对于平坦化介电层的顶表面凹陷。 介电覆盖层沉积在平坦化电介质层和替代栅极堆叠的顶表面上，使得替代栅极堆叠上的介电顶盖层的一部分的顶表面相对于上述电介质层的另一部分垂直凹陷 平坦化介电层。 电介质覆盖层的垂直偏移可以与选择性通孔蚀刻工艺结合使用以形成自对准接触结构。

    Replacement metal gate structures for effective work function control
    9.
    发明授权
    Replacement metal gate structures for effective work function control 有权
    更换金属门结构，实现有效的工作功能控制

    公开(公告)号：US09293461B2

    公开(公告)日：2016-03-22

    申请号：US13780003

    申请日：2013-02-28

    申请人： GLOBALFOUNDRIES INC.

    发明人： Unoh Kwon ,  Michael P. Chudzik ,  Ravikumar Ramachandran

    IPC分类号： H01L27/092 ,  H01L21/8238

    CPC分类号： H01L27/0922 ,  H01L21/823842

    摘要： A stack of a barrier metal layer and a first-type work function metal layer is deposited in replacement metal gate schemes. The barrier metal layer can be deposited directly on the gate dielectric layer. The first-type work function metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the barrier metal layer in the regions of a second type field effect transistor. Alternately, the first-type work function layer can be deposited directly on the gate dielectric layer. The barrier metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the gate dielectric layer in the regions of the second type field effect transistor. A conductive material fill and planarization form dual work function replacement gate structures.

    摘要翻译： 在替换金属栅极方案中沉积阻挡金属层和第一型功函数金属层的堆叠。 阻挡金属层可以直接沉积在栅极介电层上。 图案化第一型功函数金属层仅存在于第一类场效应晶体管的区域中。 第二类功函数金属层直接沉积在第二类场效应晶体管的区域中的势垒金属层上。 或者，第一类功函数层可以直接沉积在栅介电层上。 图案化阻挡金属层仅存在于第一类场效应晶体管的区域中。 第二类型功函数金属层直接沉积在第二类场效应晶体管的区域中的栅介质层上。 导电材料填充和平坦化形成双功能功能替代栅极结构。