Invention Grant
- Patent Title: Uniform finFET gate height
- Patent Title (中): 均匀finFET栅极高度
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Application No.: US14327598Application Date: 2014-07-10
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Publication No.: US09245965B2Publication Date: 2016-01-26
- Inventor: Balasubramanian S. Haran , Sanjay Mehta , Shom Ponoth , Ravikumar Ramachandran , Stefan Schmitz , Theodorus E. Standaert
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L27/12 ; H01L27/088 ; H01L21/28 ; H01L21/84 ; H01L21/8234 ; H01L29/66
Abstract:
A structure including a first plurality of fins and a second plurality of fins etched from a semiconductor substrate, and a fill material located above the semiconductor substrate and between the first plurality of fins and the second plurality of fins, the fill material does not contact either the first plurality of fins or the second plurality of fins.
Public/Granted literature
- US20140319611A1 UNIFORM FINFET GATE HEIGHT Public/Granted day:2014-10-30
Information query
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