发明授权
US09293461B2 Replacement metal gate structures for effective work function control
有权
更换金属门结构，实现有效的工作功能控制
- 专利标题： Replacement metal gate structures for effective work function control
- 专利标题（中）： 更换金属门结构，实现有效的工作功能控制
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申请号： US13780003申请日： 2013-02-28
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公开(公告)号： US09293461B2公开(公告)日： 2016-03-22
- 发明人: Unoh Kwon , Michael P. Chudzik , Ravikumar Ramachandran
- 申请人： GLOBALFOUNDRIES INC.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/8238
摘要：
A stack of a barrier metal layer and a first-type work function metal layer is deposited in replacement metal gate schemes. The barrier metal layer can be deposited directly on the gate dielectric layer. The first-type work function metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the barrier metal layer in the regions of a second type field effect transistor. Alternately, the first-type work function layer can be deposited directly on the gate dielectric layer. The barrier metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the gate dielectric layer in the regions of the second type field effect transistor. A conductive material fill and planarization form dual work function replacement gate structures.
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