公开(公告)号：US09349650B2

公开(公告)日：2016-05-24

申请号：US14524246

申请日：2014-10-27

申请人： GLOBALFOUNDRIES INC.

发明人： Kevin K. Chan ,  Yue Ke ,  Annie Levesque ,  Dae-Gyu Park ,  Ravikumar Ramachandran ,  Amanda L. Tessier ,  Min Yang

IPC分类号： H01L21/8234 ,  H01L29/78 ,  H01L21/02 ,  H01L21/285 ,  H01L29/66 ,  H01L21/223 ,  H01L21/265 ,  H01L27/088 ,  H01L29/08

CPC分类号： H01L21/823431 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/26566 ,  H01L21/28518 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0847 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7848 ,  H01L29/7853

摘要： A gate structure is formed straddling a first portion of a plurality of semiconductor fins that extend upwards from a topmost surface of an insulator layer. A dielectric spacer is formed on sidewalls of the gate structure and straddling a second portion of the plurality of semiconductor fins. Epitaxial semiconductor material portions that include a non-planar bottommost surface and a non-planar topmost surface are grown from at least the exposed sidewalls of each semiconductor fin not including the gate structure or the gate spacer to merge adjacent semiconductor fins. A gap is present beneath epitaxial semiconductor material portions and the topmost surface of the insulator layer. A second epitaxial semiconductor material is formed on the epitaxial semiconductor material portions and thereafter the second epitaxial semiconductor material is converted into a metal semiconductor alloy.

摘要翻译： 栅极结构跨越从绝缘体层的最上表面向上延伸的多个半导体鳍片的第一部分形成。 介电隔离件形成在栅极结构的侧壁上并且跨越多个半导体鳍片的第二部分。 至少从不包括栅极结构或栅极间隔物的半导体鳍片的暴露的侧壁至少生长包括非平面最底表面和非平面最上表面的外延半导体材料部分，以使相邻的半导体鳍片合流。 在外延半导体材料部分和绝缘体层的最上表面之下存在间隙。 在外延半导体材料部分上形成第二外延半导体材料，然后将第二外延半导体材料转换成金属半导体合金。

公开(公告)号：US09023697B2

公开(公告)日：2015-05-05

申请号：US13962322

申请日：2013-08-08

申请人： International Business Machines Corporation ,  GlobalFoundries, Inc.

发明人： Kevin K. Chan ,  Dae-Gyu Park ,  Xinhui Wang ,  Yun-Yu Wang ,  Min Yang ,  Qi Zhang

IPC分类号： H01L21/8238 ,  H01L27/092

CPC分类号： H01L21/823821 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/0924 ,  H01L29/7843 ,  H01L29/7847 ,  H01L29/7848 ,  H01L29/785

摘要： A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.

摘要翻译： 形成半导体结构的方法包括在多个鳍片的暴露部分上生长外延掺杂层。 外延掺杂层将散热片的暴露部分组合以形成合并的源极和漏极区域。 通过外延掺杂层在鳍片中发生注入工艺，以改变鳍片的晶格以形成非晶化鳍片。 氮化物层沉积在半导体结构上。 氮化物层覆盖合并的源区和漏区。 在半导体结构中进行热处理以使非晶化翅片再结晶以形成再结晶的翅片。 再结晶的翅片，外延掺杂层和氮化物层形成应变源极和漏极区域，其对沟道区域引起应力。

公开(公告)号：US09564505B2

公开(公告)日：2017-02-07

申请号：US14254939

申请日：2014-04-17

申请人： GLOBALFOUNDRIES INC.

发明人： Michael P. Chudzik ,  Martin M. Frank ,  Herbert L. Ho ,  Mark J. Hurley ,  Rashmi Jha ,  Naim Moumen ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri

IPC分类号： H01L21/70 ,  H01L29/49 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/51

CPC分类号： H01L29/49 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/4958 ,  H01L29/517

摘要： Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region.

摘要翻译： 提出了离子注入来改变双功能金属栅极整合的有效功函数。 一种方法可以包括在第一类型场效应晶体管（FET）区域和第二类型FET区域上形成高介电常数（高k）层; 在第一型FET区域和第二类型FET区域上形成具有与第一型FET兼容的第一有效功函数的金属层; 以及通过在第二类型FET区域上将金属注入到金属层中，将第一有效功函数改变为第二类不同的有效功函数。

公开(公告)号：US09275907B2

公开(公告)日：2016-03-01

申请号：US14522649

申请日：2014-10-24

申请人： International Business Machines Corporation ,  GLOBALFOUNDRIES, INC.

发明人： Kevin K. Chan ,  Dae-Gyu Park ,  Xinhui Wang ,  Yun-Yu Wang ,  Min Yang ,  Qi Zhang

IPC分类号： H01L29/66 ,  H01L21/8238 ,  H01L29/78 ,  H01L27/092 ,  H01L21/265

CPC分类号： H01L21/823821 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/0924 ,  H01L29/7843 ,  H01L29/7847 ,  H01L29/7848 ,  H01L29/785

摘要： A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.

公开(公告)号：US09349649B2

公开(公告)日：2016-05-24

申请号：US14315844

申请日：2014-06-26

申请人： GLOBALFOUNDRIES INC.

发明人： Kevin K. Chan ,  Yue Ke ,  Annie Levesque ,  Dae-Gyu Park ,  Ravikumar Ramachandran ,  Amanda L. Tessier ,  Min Yang

IPC分类号： H01L21/8234 ,  H01L29/78 ,  H01L21/02 ,  H01L21/285 ,  H01L29/66 ,  H01L21/223 ,  H01L21/265 ,  H01L27/088 ,  H01L29/08 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L21/823431 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/26566 ,  H01L21/28518 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0847 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7848 ,  H01L29/7853

摘要： A gate structure is formed straddling a first portion of a plurality of semiconductor fins that extend upwards from a topmost surface of an insulator layer. A dielectric spacer is formed on sidewalls of the gate structure and straddling a second portion of the plurality of semiconductor fins. Epitaxial semiconductor material portions that include a non-planar bottommost surface and a non-planar topmost surface are grown from at least the exposed sidewalls of each semiconductor fin not including the gate structure or the gate spacer to merge adjacent semiconductor fins. A gap is present beneath epitaxial semiconductor material portions and the topmost surface of the insulator layer. A second epitaxial semiconductor material is formed on the epitaxial semiconductor material portions and thereafter the second epitaxial semiconductor material is converted into a metal semiconductor alloy.