Invention Grant
US09536900B2 Forming fins of different semiconductor materials on the same substrate
有权
在同一基板上形成不同半导体材料的翅片
- Patent Title: Forming fins of different semiconductor materials on the same substrate
- Patent Title (中): 在同一基板上形成不同半导体材料的翅片
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Application No.: US14284820Application Date: 2014-05-22
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Publication No.: US09536900B2Publication Date: 2017-01-03
- Inventor: Ravikumar Ramachandran , Huiling Shang , Keith Tabakman , Henry K. Utomo , Reinaldo A. Vega
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman OT
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman OT
- Agency: Scully Scott Murphy and Presser
- Agent Frank Digiglio
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L27/12 ; H01L21/762 ; H01L29/10
Abstract:
A method of manufacturing a semiconductor device, by etching a region of an SOI substrate so that only a portion of the original semiconductor is present above the insulator layer. After etching has occurred, a different semiconductor material is grown in the etched region, and fins are formed. An isolation layer is deposited to a height above that the base semiconductor of the etched region.
Public/Granted literature
- US20150340381A1 FORMING FINS OF DIFFERENT SEMICONDUCTOR MATERIALS ON THE SAME SUBSTRATE Public/Granted day:2015-11-26
Information query
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