Invention Grant
- Patent Title: Multi-composition gate dielectric field effect transistors
- Patent Title (中): 多组合栅介质场效应晶体管
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Application No.: US14881766Application Date: 2015-10-13
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Publication No.: US09397175B2Publication Date: 2016-07-19
- Inventor: Emre Alptekin , Unoh Kwon , Wing L. Lai , Zhengwen Li , Vijay Narayanan , Ravikumar Ramachandran , Reinaldo A. Vega
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L29/40 ; H01L29/51 ; H01L27/088 ; H01L29/66 ; H01L21/8234 ; H01L29/49

Abstract:
A first gate structure and a second gate structure are formed over a semiconductor material layer. The first gate structure includes a planar silicon-based gate dielectric, a planar high-k gate dielectric, a metallic nitride portion, and a first semiconductor material portion, and the second gate structure includes a silicon-based dielectric material portion and a second semiconductor material portion. After formation of gate spacers and a planarization dielectric layer, the second gate structure is replaced with a transient gate structure including a chemical oxide portion and a second high-k gate dielectric. A work-function metal layer and a conductive material portion can be formed in each gate electrode by replacement of semiconductor material portions. A gate electrode includes the planar silicon-based gate dielectric, the planar high-k gate dielectric, and a U-shaped high-k gate dielectric, and another gate electrode includes the chemical oxide portion and another U-shaped high-k gate dielectric.
Public/Granted literature
- US20160035841A1 MULTI-COMPOSITION GATE DIELECTRIC FIELD EFFECT TRANSISTORS Public/Granted day:2016-02-04
Information query
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