公开(公告)号：US11043740B2

公开(公告)日：2021-06-22

申请号：US16411883

申请日：2019-05-14

Applicant: QUALCOMM Incorporated

Inventor： Suhyung Hwang ,  Chin-Kwan Kim ,  Hong Bok We ,  Jaehyun Yeon

IPC: H01Q1/52

Abstract: Methods and apparatuses for enhancing antenna modules with a shield layer. The apparatus includes an antenna module having an antenna layer. The antenna layer includes an antenna. The antenna module further includes a signal routing layer; a radio frequency (RF) communication component disposed on the signal routing layer; a shield cover encasing the RF communication component; and a shield layer. The antenna module further includes an antenna module side. The antenna module side includes a side of the signal routing layer and a side of the antenna layer. The shield layer covers a portion of the antenna module side such that at least a portion of the side of the antenna layer is uncovered.

公开(公告)号：US10049977B2

公开(公告)日：2018-08-14

申请号：US14450201

申请日：2014-08-01

Applicant: QUALCOMM Incorporated

Inventor： Hong Bok We ,  Dong Wook Kim ,  Jae Sik Lee ,  Kyu-Pyung Hwang ,  Young Kyu Song

IPC: H01L23/495 ,  H01L23/498 ,  H01L25/10 ,  H01L21/48 ,  H01L23/31 ,  H01L25/065 ,  H01L23/538

Abstract: A package on package structure may be formed by fabricating or providing a bottom package having a substrate, at least one die on top of the substrate, and bonding pads on the top of the substrate. Next, a frame is formed on the bonding pads and connected to the bonding pads. Next, a package material is molded over the top of the substrate to encapsulate the frame, the die, and the pads or substantially encapsulates these components. Next, a portion of the molded package material is removed to expose at least a portion of the frame. The exposed frame portions are formed such that a desired fan in or fan out configuration is obtained. Next, a non-conductive layer is formed on the exposed frame. Last, a second package having a die or chip is connected to the exposed portion of the frame to form a package on package structure.

公开(公告)号：US09881859B2

公开(公告)日：2018-01-30

申请号：US14273882

申请日：2014-05-09

Applicant: QUALCOMM Incorporated

Inventor： Hong Bok We ,  Dong Wook Kim ,  Jae Sik Lee ,  Shiqun Gu ,  Ratibor Radojcic

IPC: H01L23/498 ,  H01L23/538 ,  H01L23/522 ,  H01L21/78 ,  H01L21/56 ,  H01L23/31 ,  H01L25/065 ,  H01L23/528 ,  H01L21/311 ,  H05K1/09 ,  H05K1/11 ,  H01L25/10 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L23/49827 ,  H01L21/31127 ,  H01L21/561 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/498 ,  H01L23/49866 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5385 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16235 ,  H01L2224/81411 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81466 ,  H01L2224/81484 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/141 ,  H01L2924/143 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/20648 ,  H01L2924/3511 ,  H05K1/09 ,  H05K1/115 ,  H05K2201/09563 ,  H01L2924/014 ,  H01L2224/81

Abstract: A substrate block is provided that has an increased width. The substrate block comprises two substrate bars, and the substrate bars each comprise a substrate and a plurality of filled vias through the substrate. The substrate block may be used to manufacture package substrates, and these package substrate may be incorporated into a PoP structure. The package substrate includes a carrier having a plurality of vertical interconnections and a bar coupled to the vertical interconnections.

公开(公告)号：US09875997B2

公开(公告)日：2018-01-23

申请号：US14572753

申请日：2014-12-16

Applicant: QUALCOMM Incorporated

Inventor： Hong Bok We ,  Dong Wook Kim ,  Kyu-Pyung Hwang ,  Young Kyu Song

IPC: H01L25/10 ,  H01L23/14 ,  H01L25/00 ,  H01L23/13 ,  H01L23/538 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L25/105 ,  H01L23/13 ,  H01L23/142 ,  H01L23/3128 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24247 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/8203 ,  H01L2224/83192 ,  H01L2224/92244 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/15153 ,  H01L2924/15155 ,  H01L2924/15311 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/3511

Abstract: The present disclosure provides semiconductor packages and methods for fabricating PoP semiconductor packages. The PoP semiconductor package may comprise a first semiconductor package, the first semiconductor package comprising an anodized metal lid structure comprising (i) a central cavity having a central cavity opening direction and (ii) at least one perimeter cavity having a perimeter cavity opening direction facing in an opposite direction of the central cavity opening direction, a first semiconductor device arranged in the central cavity of the anodized metal lid structure, a redistribution layer electrically coupled to the first semiconductor device, wherein a conductive trace formed in the redistribution layer is exposed to the at least one perimeter cavity, and solder material arranged in the at least one perimeter cavity, and a second semiconductor package, the second semiconductor package comprising at least one conductive post, wherein the at least one conductive post is electrically coupled to the solder material arranged in the at least one perimeter cavity.

公开(公告)号：US09799628B2

公开(公告)日：2017-10-24

申请号：US15043484

申请日：2016-02-12

Applicant: QUALCOMM Incorporated

Inventor： Dong Wook Kim ,  Hong Bok We ,  Jae Sik Lee ,  Shiqun Gu

IPC: H01L25/065 ,  H01L21/56 ,  H01L23/31 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L25/0652 ,  H01L21/565 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/1146 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/14151 ,  H01L2224/14155 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/1624 ,  H01L2224/171 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2224/49173 ,  H01L2224/73203 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/92 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2924/00014 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/81 ,  H01L21/76898

Abstract: Some examples of the disclosure may include a package on package integrated package configuration including a first die located above the substrate in a first plane, a second die located above the first die in a second plane with a portion extending past the first die, a third die located above the first die in the second plane with a portion extending past the first die, a fourth die located above the second die and the third die in a third plane with a portion extending past the second die and the third die, and a fifth die located above the second die and the third die in the third plane with a portion extending past the second die and the third die.

公开(公告)号：US20170125332A1

公开(公告)日：2017-05-04

申请号：US14634547

申请日：2015-02-27

Applicant: QUALCOMM Incorporated

Inventor： Young Kyu Song ,  Kyu-Pyung Hwang ,  Hong Bok We

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L21/4857 ,  H01G4/12 ,  H01G4/224 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/13 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/16 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/1132 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1183 ,  H01L2224/11849 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13101 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2224/16113 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/26175 ,  H01L2224/27312 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2224/9211 ,  H01L2924/01022 ,  H01L2924/01074 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/15763 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014

Abstract: Many aspects of an improved IC package are disclosed herein. The improved IC package exhibits low-impedance and high power and signal integrity. The improved IC package comprises an IC die mounted on a multilayer coreless substrate. The thicknesses of prepreg layers of the coreless substrate are specific chosen to minimize warpage and to provide good mechanical performance. Each of the prepreg layers may have different coefficient of thermal expansion (CTE) and/or thickness to enable better control of the coreless substrate mechanical properties. The improved IC package also includes a vertically mounted die side capacitor and a conductive layer formed on the solder resist layer of the substrate. The conductive layer is formed such that it also encapsulates the vertically mounted capacitor while being electrically coupled to one of the capacitor's electrode.

公开(公告)号：US09633950B1

公开(公告)日：2017-04-25

申请号：US15040881

申请日：2016-02-10

Applicant: QUALCOMM Incorporated

Inventor： Hong Bok We ,  Jae Sik Lee ,  Dong Wook Kim

IPC: H01L23/49 ,  H01L23/538 ,  H01L23/498 ,  H01L21/56 ,  H01L21/48

CPC classification number: H01L23/5387 ,  H01L21/4853 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3121 ,  H01L23/49833 ,  H01L25/0652 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/1815

Abstract: Some features pertain to an integrated device that includes a first integrated circuit (IC) package, a flexible connector and a second integrated circuit (IC) package. The first integrated circuit (IC) package includes a first die, a plurality of first interconnects, and a first dielectric layer encapsulating the first die. The flexible connector is coupled to the first integrated circuit (IC) package. The flexible connector includes the first dielectric layer, and an interconnect. The second integrated circuit (IC) package is coupled to the flexible connector. The second integrated circuit (IC) package includes the first dielectric layer, and a plurality of second interconnects. The first integrated circuit (IC) package, the second integrated circuit (IC) package, and the flexible connector are coupled together through at least a portion (e.g., contiguous portion) of the first dielectric layer. In some implementations, the flexible connector comprises a dummy metal layer.

公开(公告)号：US09595494B2

公开(公告)日：2017-03-14

申请号：US14844185

申请日：2015-09-03

Applicant: QUALCOMM Incorporated

Inventor： Hong Bok We ,  Dong Wook Kim ,  Jae Sik Lee

IPC: H01L23/00 ,  H01L23/538 ,  H01L25/065 ,  H01L25/10 ,  H01L25/00 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/31

CPC classification number: H01L23/5381 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/76802 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/3157 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/13 ,  H01L24/19 ,  H01L24/25 ,  H01L24/27 ,  H01L24/33 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68359 ,  H01L2224/19 ,  H01L2224/2205 ,  H01L2224/221 ,  H01L2224/24137 ,  H01L2224/24226 ,  H01L2224/73204 ,  H01L2225/06548 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/1533

Abstract: A semiconductor package according to some examples of the disclosure may include a substrate having a bridge embedded in the substrate, a first and second die coupled to the substrate, and a plurality of electrically conductive bridge interconnects in the substrate coupling the bridge to the first and second die. The plurality of electrically conductive bridge interconnects may have a first bridge contact layer directly coupled to the bridge, a first solder layer on the first bridge contact layer, a second bridge contact layer on the first solder layer, a second solder layer on the second bridge contact layer, and a die contact directly coupled to one of the first and second die where the plurality of electrically conductive bridge interconnects are embedded in the substrate.

Abstract translation: 根据本公开的一些示例的半导体封装可以包括具有嵌入在衬底中的桥的衬底，耦合到衬底的第一和第二裸片以及耦合到第一和第二衬底的衬底中的多个导电桥互连 第二次死亡 多个导电桥互连可以具有直接耦合到桥的第一桥接触层，第一桥接触层上的第一焊料层，第一焊料层上的第二桥接触层，第二桥上的第二焊料层 接触层和直接耦合到所述第一和第二管芯中的一个的管芯接触，其中所述多个导电桥互连件嵌入在所述衬底中。

公开(公告)号：US09583462B2

公开(公告)日：2017-02-28

申请号：US14689011

申请日：2015-04-16

Applicant: QUALCOMM Incorporated

Inventor： Jae Sik Lee ,  Hong Bok We ,  Dong Wook Kim

IPC: H01L21/02 ,  H01L25/065 ,  H01L21/56 ,  H01L21/768 ,  H01L23/29 ,  H01L23/31 ,  H01L23/522 ,  H01L25/00 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538

CPC classification number: H01L25/0655 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/3171 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/5226 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2924/0002 ,  H01L2924/18162 ,  H01L2924/00

Abstract: A semiconductor device may include a first semiconductor die. A passivation layer supports the first semiconductor die. The passivation layer may include a first via having a barrier layer and a first redistribution layer (RDL) conductive interconnect coupled to the first via through the barrier layer. The first via may couple the first semiconductor die to the first RDL conductive interconnect.

Abstract translation: 半导体器件可以包括第一半导体管芯。 钝化层支撑第一半导体管芯。 钝化层可以包括具有阻挡层的第一通孔和通过阻挡层耦合到第一通孔的第一再分布层（RDL）导电互连。 第一通孔可以将第一半导体管芯耦合到第一RDL导电互连。

公开(公告)号：US20160379959A1

公开(公告)日：2016-12-29

申请号：US15261731

申请日：2016-09-09

Applicant: QUALCOMM Incorporated

Inventor： Hong Bok We ,  Jae Sik Lee ,  Dong Wook Kim

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L25/0655 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/5381 ,  H01L23/5383 ,  H01L23/5384 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/13022 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32137 ,  H01L2224/81192 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/381 ,  H01L2924/00014

Abstract: An integrated circuit (IC) package structure may include a substrate. The substrate may include a semiconductor bridge having a first surface directly on a surface of the substrate that faces a first semiconductor die and a second semiconductor die. The semiconductor bridge may be disposed within a cavity extending through a photo-sensitive layer on the surface of the substrate. The semiconductor bridge may have an exposed, second surface substantially flush with the photo-sensitive layer. The first semiconductor die and the second semiconductor die are supported by the substrate and coupled together through the semiconductor bridge.