公开(公告)号：US08723330B2

公开(公告)日：2014-05-13

申请号：US13894536

申请日：2013-05-15

申请人： Texas Instruments Incorporated

发明人： Jeffrey A. West

IPC分类号： H01L21/44

CPC分类号： H01L23/538 ,  H01L21/563 ,  H01L23/481 ,  H01L23/562 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13566 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13673 ,  H01L2224/13681 ,  H01L2224/14181 ,  H01L2224/1613 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81002 ,  H01L2224/81005 ,  H01L2224/81007 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01005 ,  H01L2924/01074

摘要： A method of protecting through substrate via (TSV) die from bonding damage includes providing a substrate including a plurality of TSV die having a topside including active circuitry, a bottomside, and a plurality of TSVs that include an inner metal core that reaches from the topside to protruding TSV tips that extend out from the bottomside. A protective layer is formed on or applied to the bottomside of the TSV die including between and over the protruding TSV tips. The TSV die is bonded with its topside down onto a workpiece having a workpiece surface and its bottomside up and in contact with a bond head. The protective layer reduces damage from the bonding process including warpage of the TSV die by preventing the bond head from making direct contact to the protruding TSV tips.

摘要翻译： 通过衬底通孔（TSV）裸片保护接合损伤的方法包括提供包括多个TSV管芯的衬底，所述TSV管芯具有包括有源电路，底部和多个TSV的顶部，所述TSV包括从顶侧到达的内部金属芯 突出TSV技巧，从底部延伸出来。 在TSV模头的底部上形成保护层，包括在突出的TSV尖端之间和之上。 TSV模具的上下结合到具有工件表面的工件上，并且其底部向上并与接合头接触。 保护层通过防止接合头与突出的TSV尖端直接接触来减少接合过程中的损伤，包括TSV模头的翘曲。

公开(公告)号：US08546956B2

公开(公告)日：2013-10-01

申请号：US13826830

申请日：2013-03-14

申请人： International Business Machines Corporation

发明人： Son V. Nguyen

IPC分类号： H01L23/488

CPC分类号： H01L23/488 ,  H01L23/481 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13649 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/16145 ,  H01L2224/16501 ,  H01L2224/29147 ,  H01L2224/29564 ,  H01L2224/2957 ,  H01L2224/2958 ,  H01L2224/29649 ,  H01L2224/29655 ,  H01L2224/29657 ,  H01L2224/29666 ,  H01L2224/29676 ,  H01L2224/29681 ,  H01L2224/29684 ,  H01L2224/32501 ,  H01L2224/80075 ,  H01L2224/80097 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/8183 ,  H01L2224/81895 ,  H01L2224/83005 ,  H01L2224/83193 ,  H01L2224/8383 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2924/00

摘要： At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.

公开(公告)号：US20130200520A1

公开(公告)日：2013-08-08

申请号：US13826830

申请日：2013-03-14

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Son V. Nguyen

IPC分类号： H01L23/488

CPC分类号： H01L23/488 ,  H01L23/481 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13649 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/16145 ,  H01L2224/16501 ,  H01L2224/29147 ,  H01L2224/29564 ,  H01L2224/2957 ,  H01L2224/2958 ,  H01L2224/29649 ,  H01L2224/29655 ,  H01L2224/29657 ,  H01L2224/29666 ,  H01L2224/29676 ,  H01L2224/29681 ,  H01L2224/29684 ,  H01L2224/32501 ,  H01L2224/80075 ,  H01L2224/80097 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/8183 ,  H01L2224/81895 ,  H01L2224/83005 ,  H01L2224/83193 ,  H01L2224/8383 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2924/00

摘要： At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.

摘要翻译： 在第一器件晶片的至少Cu表面上形成至少一个金属粘附层。 具有另一Cu表面的第二器件晶片被定位在第一器件晶片的Cu表面的顶部和至少一个金属粘附层上。 然后将第一和第二器件晶片结合在一起。 接合包括将器件晶片加热到低于400℃的温度，有或没有施加外部施加的压力。 在加热期间，两个Cu表面结合在一起，并且至少一个金属粘附层从两个Cu表面获得氧原子，并在Cu表面之间形成至少一个金属氧化物结合层。

公开(公告)号：US20130130496A1

公开(公告)日：2013-05-23

申请号：US13743125

申请日：2013-01-16

申请人： Chyi-Tsong NI ,  I-Shi WANG ,  Hsin-Kuei LEE ,  Ching-Hou SU

发明人： Chyi-Tsong NI ,  I-Shi WANG ,  Hsin-Kuei LEE ,  Ching-Hou SU

IPC分类号： H01L21/768

CPC分类号： H01L21/768 ,  B81B2207/012 ,  B81C1/00269 ,  B81C2203/019 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/11826 ,  H01L2224/11827 ,  H01L2224/11848 ,  H01L2224/13017 ,  H01L2224/131 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13624 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13669 ,  H01L2224/13684 ,  H01L2224/16145 ,  H01L2224/165 ,  H01L2224/81011 ,  H01L2224/81097 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/81801 ,  H01L2224/81948 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/1461 ,  H01L2924/01014 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： A method for fabricating a semiconductor apparatus including providing a first silicon substrate having a first contact, wherein providing the first silicon substrate comprises forming a silicide layer between the first silicon substrate and a first metal layer. The method further includes providing a second silicon substrate having a second contact comprising a second metal layer and placing the first contact in contact with the second contact. The method further includes heating the first and second metal layers to form a metallic alloy, whereby the metallic alloy bonds the first contact to the second contact.

摘要翻译： 一种制造半导体器件的方法，包括提供具有第一接触的第一硅衬底，其中提供第一硅衬底包括在第一硅衬底和第一金属层之间形成硅化物层。 该方法还包括提供第二硅衬底，其具有包括第二金属层的第二接触层，并将第一接触件与第二接触件接触。 该方法还包括加热第一和第二金属层以形成金属合金，由此金属合金将第一触点与第二触点接合。

公开(公告)号：US08431436B1

公开(公告)日：2013-04-30

申请号：US13288645

申请日：2011-11-03

申请人： Son V. Nguyen

发明人： Son V. Nguyen

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L23/488 ,  H01L23/481 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13649 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/16145 ,  H01L2224/16501 ,  H01L2224/29147 ,  H01L2224/29564 ,  H01L2224/2957 ,  H01L2224/2958 ,  H01L2224/29649 ,  H01L2224/29655 ,  H01L2224/29657 ,  H01L2224/29666 ,  H01L2224/29676 ,  H01L2224/29681 ,  H01L2224/29684 ,  H01L2224/32501 ,  H01L2224/80075 ,  H01L2224/80097 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/8183 ,  H01L2224/81895 ,  H01L2224/83005 ,  H01L2224/83193 ,  H01L2224/8383 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2924/00

摘要： At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.

摘要翻译： 在第一器件晶片的至少Cu表面上形成至少一个金属粘附层。 具有另一Cu表面的第二器件晶片被定位在第一器件晶片的Cu表面的顶部和至少一个金属粘附层上。 然后将第一和第二器件晶片结合在一起。 接合包括将器件晶片加热到低于400℃的温度，有或没有施加外部施加的压力。 在加热期间，两个Cu表面结合在一起，并且至少一个金属粘合层从两个Cu表面获得氧原子，并在Cu表面之间形成至少一个金属氧化物结合层。

公开(公告)号：US20130075905A1

公开(公告)日：2013-03-28

申请号：US13602581

申请日：2012-09-04

申请人： Ju-il Choi ,  Jeong-Woo Park ,  Jeonggi Jin ,  Hyungseok Kim

发明人： Ju-il Choi ,  Jeong-Woo Park ,  Jeonggi Jin ,  Hyungseok Kim

IPC分类号： H01L23/48 ,  H01L23/532

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05599 ,  H01L2224/13009 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/13562 ,  H01L2224/13583 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13669 ,  H01L2224/13681 ,  H01L2224/13686 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/16503 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/05552

摘要： A semiconductor device includes a substrate and a through via penetrating the substrate. The through via has a protruding portion at a first end thereof extending out from a first surface of the substrate and a second end of the via contacting an interconnection line proximate a second, opposite, end of the substrate. A wetting layer is positioned between the via and the substrate and extends over the protruding portion of the via. The wetting layer includes a material selected to improve an adhesive strength between the wetting layer and a solder ball contacting the wetting layer extending over the protruding portion of the via when a solder ball is coupled to the wetting layer.

摘要翻译： 半导体器件包括基板和穿透基板的贯通孔。 通孔在其第一端处具有从基板的第一表面延伸出的突出部分，并且通孔的第二端接近靠近基板的第二相对端的互连线。 润湿层位于通孔和基底之间并且在通孔的突出部分上延伸。 润湿层包括选择的材料，以便当焊球与润湿层耦合时，改善润湿层与接触润湿层的焊球之间的粘合强度，该润湿层在通孔的突出部分上延伸。

公开(公告)号：US08293587B2

公开(公告)日：2012-10-23

申请号：US11870583

申请日：2007-10-11

申请人： Virendra R Jadhav ,  Krystyna W Semkow ,  Kamalesh K Srivastava ,  Brian R Sundlof

发明人： Virendra R Jadhav ,  Krystyna W Semkow ,  Kamalesh K Srivastava ,  Brian R Sundlof

IPC分类号： H01L21/00

CPC分类号： H01L24/13 ,  H01L23/562 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11901 ,  H01L2224/13005 ,  H01L2224/13013 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13171 ,  H01L2224/13184 ,  H01L2224/13655 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13684 ,  H01L2224/16235 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/2064 ,  H01L2924/351 ,  H01L2924/35121 ,  H01L2924/37001 ,  H01L2924/384 ,  Y10T156/10 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

摘要： A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions.

摘要翻译： 提供了一种多层柱及其制造方法。 多层柱用作芯片和基板之间的互连。 支柱具有至少一个低强度，高延展性变形区域，其被配置为吸收在芯片组装和热偏移期间施加的力。

公开(公告)号：US20110115076A1

公开(公告)日：2011-05-19

申请号：US12873570

申请日：2010-09-01

申请人： Yasuo YAMASAKI

发明人： Yasuo YAMASAKI

IPC分类号： H01L23/498 ,  H01L21/60 ,  H01L21/50

CPC分类号： H01L24/11 ,  H01L23/3114 ,  H01L24/13 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/1319 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13666 ,  H01L2224/13669 ,  H01L2224/13671 ,  H01L2224/13684 ,  H01L2224/13686 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/0665 ,  H01L2924/00014 ,  H01L2924/05341 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor substrate that has a first surface and a second surface opposite to the first surface; an electrode that is provided on the first surface of the semiconductor substrate; an insulating film that is provided on the first surface of the semiconductor substrate, the insulating film having an aperture at least partly overlapping the electrode; a resin bump that is provided on the insulating film; and a wiring layer that is electrically connected to the electrode, a part of the wiring layer being partly provided on the resin bump, the wiring layer including a first conductive layer formed on the electrode and on the resin bump, and a second conductive layer formed on the first conductive layer, the first conductive layer including a first surface on the side of the semiconductor substrate, and a second surface on the side of the second conductive layer, and a first oxide film or a first nitride film that is provided on the second surface of the first conductive layer.

摘要翻译： 半导体器件包括：具有与第一表面相对的第一表面和第二表面的半导体衬底; 设置在所述半导体衬底的第一表面上的电极; 绝缘膜，设置在所述半导体衬底的所述第一表面上，所述绝缘膜具有至少部分地与所述电极重叠的孔; 设置在绝缘膜上的树脂凸块; 以及布线层，其电连接到所述电极，所述布线层的一部分部分地设置在所述树脂凸块上，所述布线层包括形成在所述电极上和所述树脂凸块上的第一导电层，以及形成的第二导电层 在第一导电层上，第一导电层包括半导体衬底侧的第一表面和第二导电层一侧的第二表面，以及设置在第一导电层上的第一氧化物膜或第一氮化物膜 第二导电层的第二表面。

公开(公告)号：US20100201001A1

公开(公告)日：2010-08-12

申请号：US12686575

申请日：2010-01-13

申请人： Tatsuhiko ASAKAWA

发明人： Tatsuhiko ASAKAWA

IPC分类号： H01L23/522 ,  H01L21/283

CPC分类号： H01L24/11 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/11515 ,  H01L2224/1155 ,  H01L2224/1182 ,  H01L2224/11848 ,  H01L2224/13008 ,  H01L2224/13012 ,  H01L2224/1319 ,  H01L2224/13566 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13666 ,  H01L2224/1401 ,  H01L2224/14151 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A method for manufacturing a semiconductor device includes: a) preparing a structure including a semiconductor substrate, an electrode provided on a first surface of the semiconductor substrate, and an insulation film provided on the first surface and having an opening positioned on a first part of the electrode; b) forming a first metal layer from an upper surface of the first part of the electrode to an upper surface of the insulation film; c) forming a resin layer on a first part of the first metal layer, which is positioned on the first part of the electrode, and on the insulation film after the step b); d) removing at least a second part of the resin layer, which is positioned on the first part of the first metal layer, in a manner to leave a first part of the resin layer so as to form a resin protrusion; and e) forming a second metal layer, which is electrically connected with the electrode, from an upper surface of the first metal layer to an upper surface of the resin protrusion.

摘要翻译： 一种制造半导体器件的方法包括：a）制备包括半导体衬底，设置在半导体衬底的第一表面上的电极和设置在第一表面上的绝缘膜的结构，并且具有位于第一部分的第一部分上的开口 电极; b）从所述电极的第一部分的上表面到所述绝缘膜的上表面形成第一金属层; c）在位于电极的第一部分上的第一金属层的第一部分和在步骤b）之后的绝缘膜上形成树脂层; d）以留下树脂层的第一部分的方式去除位于第一金属层的第一部分上的树脂层的至少第二部分，以形成树脂突起; 以及e）形成与所述电极电连接的第二金属层，从所述第一金属层的上表面到所述树脂突起的上表面。

公开(公告)号：US20090242122A1

公开(公告)日：2009-10-01

申请号：US12474329

申请日：2009-05-29

申请人： Shuichi TANAKA

发明人： Shuichi TANAKA

IPC分类号： B32B37/12 ,  B32B37/00

CPC分类号： H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/051 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13171 ,  H01L2224/1319 ,  H01L2224/13624 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13684 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3025 ,  Y10T156/10 ,  H01L2924/0665 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/01023

摘要： A method of forming a bonded structure comprises the steps of: mounting a semiconductor device having an electrode; a convexity protruding higher than the electrode and formed of a resin; and a conductive unit electrically coupled to the electrode and extending over the surface of the convexity, onto a specific substrate with an intermediary of a bonding material; and mounting the semiconductor device by hot pressing within a temperature range including the glass transition temperature of the resin.

摘要翻译： 形成接合结构的方法包括以下步骤：安装具有电极的半导体器件; 突出高于电极并由树脂形成的凸起; 以及导电单元，其电耦合到所述电极并且在所述凸起的表面上延伸到具有粘合材料的介质的特定基底上; 以及在包括树脂的玻璃化转变温度的温度范围内通过热压来安装半导体器件。