公开(公告)号：US09358765B2

公开(公告)日：2016-06-07

申请号：US14429960

申请日：2012-09-28

申请人： EV GROUP E. THALLNER GMBH

发明人： Markus Wimplinger ,  Bernhard Rebhan

IPC分类号： B23K20/00 ,  H01L23/00 ,  B32B37/16 ,  B23K20/02 ,  B23K20/16 ,  B23K20/24 ,  B32B37/10 ,  B32B37/12 ,  B32B38/00 ,  C23C14/24 ,  C23C16/44 ,  C23C28/02 ,  C25D5/00

CPC分类号： B32B37/16 ,  B23K20/02 ,  B23K20/023 ,  B23K20/026 ,  B23K20/16 ,  B23K20/24 ,  B32B37/10 ,  B32B37/12 ,  B32B38/0036 ,  B32B2309/025 ,  B32B2309/12 ,  B32B2311/12 ,  C23C14/24 ,  C23C16/44 ,  C23C28/02 ,  C25D5/00 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29147 ,  H01L2224/29166 ,  H01L2224/29181 ,  H01L2224/29644 ,  H01L2224/29647 ,  H01L2224/29664 ,  H01L2224/29666 ,  H01L2224/29684 ,  H01L2224/83013 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/8309 ,  H01L2224/83097 ,  H01L2224/83099 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/8382 ,  H01L2924/10253 ,  H01L2924/351 ,  Y10T156/10 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/20111 ,  H01L2924/2011 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/01018 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for coating of a first substrate with a first diffusion bond layer by deposition of a first material which forms the first diffusion bond layer on a first surface of the first substrate such that the first diffusion bond layer forms a grain surface with an average grain diameter H parallel to the first surface smaller than 1 μm. The invention further relates to a method for bonding of a first substrate which has been coated as described above to a second substrate which has a second diffusion bond layer, the method of the bonding comprising the following steps: bring a first diffusion bond layer of a first substrate into contact with a second diffusion bond layer of a second substrate, pressing the substrates together to form a permanent metal diffusion bond between the first and second substrates.

摘要翻译： 一种通过在第一基板的第一表面上沉积形成第一扩散接合层的第一材料的第一扩散接合层来涂覆第一基板的方法，使得第一扩散接合层形成具有平均晶粒的晶粒表面 平行于第一表面的直径H小于1μm。 本发明还涉及一种如上所述将已经涂覆的第一衬底接合到具有第二扩散接合层的第二衬底上的方法，所述接合方法包括以下步骤：使第一扩散接合层 第一衬底与第二衬底的第二扩散接合层接触，将衬底压在一起以在第一和第二衬底之间形成永久性金属扩散接合。

公开(公告)号：US20150224755A1

公开(公告)日：2015-08-13

申请号：US14429960

申请日：2012-09-28

申请人： EV GROUP E. THALLNER GMBH

发明人： Markus Wimplinger ,  Bernhard Rebhan

IPC分类号： B32B37/16 ,  B32B37/10 ,  C23C28/02 ,  C23C16/44 ,  C23C14/24 ,  C25D5/00 ,  B32B37/12 ,  B32B38/00

CPC分类号： B32B37/16 ,  B23K20/02 ,  B23K20/023 ,  B23K20/026 ,  B23K20/16 ,  B23K20/24 ,  B32B37/10 ,  B32B37/12 ,  B32B38/0036 ,  B32B2309/025 ,  B32B2309/12 ,  B32B2311/12 ,  C23C14/24 ,  C23C16/44 ,  C23C28/02 ,  C25D5/00 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29147 ,  H01L2224/29166 ,  H01L2224/29181 ,  H01L2224/29644 ,  H01L2224/29647 ,  H01L2224/29664 ,  H01L2224/29666 ,  H01L2224/29684 ,  H01L2224/83013 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/8309 ,  H01L2224/83097 ,  H01L2224/83099 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/8382 ,  H01L2924/10253 ,  H01L2924/351 ,  Y10T156/10 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/20111 ,  H01L2924/2011 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/01018 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for coating of a first substrate with a first diffusion bond layer by deposition of a first material which forms the first diffusion bond layer on a first surface of the first substrate such that the first diffusion bond layer forms a grain surface with an average grain diameter H parallel to the first surface smaller than 1 μm. The invention further relates to a method for bonding of a first substrate which has been coated as described above to a second substrate which has a second diffusion bond layer, the method of the bonding comprising the following steps: bring a first diffusion bond layer of a first substrate into contact with a second diffusion bond layer of a second substrate, pressing the substrates together to form a permanent metal diffusion bond between the first and second substrates.

摘要翻译： 一种通过在第一基板的第一表面上沉积形成第一扩散接合层的第一材料的第一扩散接合层来涂覆第一基板的方法，使得第一扩散接合层形成具有平均晶粒的晶粒表面 平行于第一表面的直径H小于1μm。 本发明还涉及一种如上所述将已经涂覆的第一衬底接合到具有第二扩散接合层的第二衬底上的方法，所述接合方法包括以下步骤：使第一扩散接合层 第一衬底与第二衬底的第二扩散接合层接触，将衬底压在一起以在第一和第二衬底之间形成永久性金属扩散接合。

公开(公告)号：US11837568B2

公开(公告)日：2023-12-05

申请号：US17460153

申请日：2021-08-27

申请人： AG MATERIALS TECHNOLOGY CO., LTD.

发明人： Tung-Han Chuang ,  Hsing-Hua Tsai

IPC分类号： H01L23/00

CPC分类号： H01L24/29 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2745 ,  H01L2224/29007 ,  H01L2224/29139 ,  H01L2224/29541 ,  H01L2224/29582 ,  H01L2224/29666 ,  H01L2224/29671 ,  H01L2224/29684 ,  H01L2224/32147 ,  H01L2224/8383 ,  H01L2224/83895 ,  H01L2924/35121

摘要： A bonding structure is provided, wherein the bonding structure includes a first substrate, a second substrate, a first adhesive layer, a second adhesive layer, and a silver feature. The second substrate is disposed opposite to the first substrate. The first adhesive layer is disposed on the first substrate. The second adhesive layer is disposed on the second substrate and opposite the first adhesive layer. The silver feature is disposed between the first adhesive layer and the second adhesive layer. The silver feature includes a silver nano-twinned structure that includes twin boundaries that are arranged in parallel. The parallel-arranged twin boundaries include 90% or more [111] crystal orientation.

公开(公告)号：US11682553B2

公开(公告)日：2023-06-20

申请号：US17061744

申请日：2020-10-02

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Hasan Naser

IPC分类号： H01L21/02 ,  H01L23/00 ,  H01L29/16

CPC分类号： H01L21/02167 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L29/1608 ,  H01L2224/29684 ,  H01L2224/83895 ,  H01L2924/01074

摘要： There is provided a method for manufacturing an electronic device including a substrate of semiconductor material, an intermediate portion, and a silicon carbide layer, the method including transferring the silicon carbide layer from a first electronic element onto a face of a second electronic element including the substrate, the transfer including: providing the first element including a primary silicon carbide-based layer, a first diffusion barrier portion, and a first metal layer; providing the second element including the substrate, a second diffusion barrier portion, and a second metal layer; and bonding an exposed face of each of the first and the second metal layers, the first and the second metal layers being formed of tungsten, the first and the second portions being formed of at least one tungsten silicide layer, and the second portion, the second metal layer, the first metal layer, and the first portion form the intermediate portion.

公开(公告)号：US08497432B2

公开(公告)日：2013-07-30

申请号：US12561526

申请日：2009-09-17

申请人： Nobuaki Hashimoto

发明人： Nobuaki Hashimoto

IPC分类号： H05K1/16

CPC分类号： H05K3/305 ,  G02F1/13458 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02373 ,  H01L2224/02377 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0331 ,  H01L2224/0332 ,  H01L2224/03515 ,  H01L2224/0361 ,  H01L2224/0362 ,  H01L2224/03831 ,  H01L2224/0519 ,  H01L2224/05191 ,  H01L2224/05548 ,  H01L2224/05551 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/0569 ,  H01L2224/05691 ,  H01L2224/061 ,  H01L2224/06155 ,  H01L2224/06505 ,  H01L2224/08058 ,  H01L2224/08238 ,  H01L2224/09055 ,  H01L2224/2731 ,  H01L2224/2732 ,  H01L2224/27515 ,  H01L2224/2761 ,  H01L2224/27825 ,  H01L2224/27831 ,  H01L2224/29008 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29017 ,  H01L2224/29023 ,  H01L2224/29082 ,  H01L2224/29101 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/29563 ,  H01L2224/2957 ,  H01L2224/29582 ,  H01L2224/29624 ,  H01L2224/29644 ,  H01L2224/29647 ,  H01L2224/29655 ,  H01L2224/29664 ,  H01L2224/29666 ,  H01L2224/29671 ,  H01L2224/29684 ,  H01L2224/301 ,  H01L2224/30155 ,  H01L2224/30505 ,  H01L2224/32058 ,  H01L2224/32238 ,  H01L2224/33055 ,  H01L2224/80194 ,  H01L2224/80203 ,  H01L2224/80385 ,  H01L2224/80424 ,  H01L2224/80444 ,  H01L2224/80447 ,  H01L2224/80488 ,  H01L2224/8085 ,  H01L2224/80862 ,  H01L2224/8088 ,  H01L2224/80902 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83385 ,  H01L2224/834 ,  H01L2224/83424 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83488 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/8388 ,  H01L2224/83902 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H05K3/325 ,  H05K2201/0367 ,  H05K2201/0382 ,  H05K2201/091 ,  H05K2201/10674 ,  H05K2201/10977 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/00 ,  H01L2924/01022 ,  H01L2924/01028

摘要： An electronic component mounting structure includes a substrate having a terminal, an electronic component having an active face, an electrode that is formed on the active face of the electronic component, a base resin that is formed on the active face, a first opening that is formed at the base resin to expose the electrode, and a conductive film that covers a part of a top surface of the base resin and that is electrically connected to the electrode via the first opening. Because the base resin is bonded to the substrate, the bonding strength between the conductive film located on the top surface of the base resin and the terminal of the substrate is increased. Therefore, the reliability of electrical connection between the conductive film and the terminal is improved.

摘要翻译： 一种电子部件安装结构，包括具有端子的基板，具有有源面的电子部件，形成在电子部件的主动面上的电极，形成在主动面上的基体树脂，第一开口部 形成在所述基体树脂上以露出所述电极;以及导电膜，其覆盖所述基础树脂的顶表面的一部分并且经由所述第一开口电连接到所述电极。 由于基体树脂与基板结合，所以位于基体树脂的上表面的导电膜与基板的端子之间的接合强度提高。 因此，提高了导电膜和端子之间的电连接的可靠性。

公开(公告)号：US20130113106A1

公开(公告)日：2013-05-09

申请号：US13288645

申请日：2011-11-03

申请人： Son V. Nguyen

发明人： Son V. Nguyen

IPC分类号： H01L23/488 ,  H01L21/50

CPC分类号： H01L23/488 ,  H01L23/481 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13649 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/16145 ,  H01L2224/16501 ,  H01L2224/29147 ,  H01L2224/29564 ,  H01L2224/2957 ,  H01L2224/2958 ,  H01L2224/29649 ,  H01L2224/29655 ,  H01L2224/29657 ,  H01L2224/29666 ,  H01L2224/29676 ,  H01L2224/29681 ,  H01L2224/29684 ,  H01L2224/32501 ,  H01L2224/80075 ,  H01L2224/80097 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/8183 ,  H01L2224/81895 ,  H01L2224/83005 ,  H01L2224/83193 ,  H01L2224/8383 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2924/00

摘要： At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.

公开(公告)号：US07375427B2

公开(公告)日：2008-05-20

申请号：US11257457

申请日：2005-10-24

申请人： Shuichi Tanaka

发明人： Shuichi Tanaka

IPC分类号： H01L23/48

CPC分类号： H01L23/562 ,  G02F1/13458 ,  H01L21/563 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/90 ,  H01L24/91 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/0233 ,  H01L2224/0236 ,  H01L2224/02377 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/11831 ,  H01L2224/13016 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13624 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13684 ,  H01L2224/16225 ,  H01L2224/27825 ,  H01L2224/27831 ,  H01L2224/29008 ,  H01L2224/29013 ,  H01L2224/29017 ,  H01L2224/29023 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/29563 ,  H01L2224/2957 ,  H01L2224/29582 ,  H01L2224/29624 ,  H01L2224/29644 ,  H01L2224/29647 ,  H01L2224/29655 ,  H01L2224/29664 ,  H01L2224/29666 ,  H01L2224/29671 ,  H01L2224/29684 ,  H01L2224/29695 ,  H01L2224/30155 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01066 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01084

摘要： A semiconductor device including a semiconductor element, an electrode pad formed on the semiconductor element, and a bump electrode conductively connected to the electrode pad which includes a resin bump formed on an active face of the semiconductor element and a conductive layer provided from the electrode pad to the surface of the resin bump, the conductive layer and the resin bump being arranged without adhesion.

摘要翻译： 包括半导体元件的半导体器件，形成在半导体元件上的电极焊盘和导电连接到电极焊盘的突起电极，该电极焊盘包括形成在半导体元件的有源面上的树脂凸块和从电极焊盘提供的导电层 到树脂凸块的表面，导电层和树脂凸块被布置而不粘附。

公开(公告)号：US20060091539A1

公开(公告)日：2006-05-04

申请号：US11257457

申请日：2005-10-24

申请人： Shuichi Tanaka

发明人： Shuichi Tanaka

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L23/562 ,  G02F1/13458 ,  H01L21/563 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/90 ,  H01L24/91 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/0233 ,  H01L2224/0236 ,  H01L2224/02377 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/11831 ,  H01L2224/13016 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13624 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13684 ,  H01L2224/16225 ,  H01L2224/27825 ,  H01L2224/27831 ,  H01L2224/29008 ,  H01L2224/29013 ,  H01L2224/29017 ,  H01L2224/29023 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/29563 ,  H01L2224/2957 ,  H01L2224/29582 ,  H01L2224/29624 ,  H01L2224/29644 ,  H01L2224/29647 ,  H01L2224/29655 ,  H01L2224/29664 ,  H01L2224/29666 ,  H01L2224/29671 ,  H01L2224/29684 ,  H01L2224/29695 ,  H01L2224/30155 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01066 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01084

摘要： A semiconductor device including a semiconductor element, an electrode pad formed on the semiconductor element, and a bump electrode conductively connected to the electrode pad which includes a resin bump formed on an active face of the semiconductor element and a conductive layer provided from the electrode pad to the surface of the resin bump, the conductive layer and the resin bump being arranged without adhesion.

摘要翻译： 包括半导体元件的半导体器件，形成在半导体元件上的电极焊盘和导电连接到电极焊盘的突起电极，该电极焊盘包括形成在半导体元件的有源面上的树脂凸块和从电极焊盘提供的导电层 到树脂凸块的表面，导电层和树脂凸块被布置而不粘附。

公开(公告)号：US08546956B2

公开(公告)日：2013-10-01

申请号：US13826830

申请日：2013-03-14

申请人： International Business Machines Corporation

发明人： Son V. Nguyen

IPC分类号： H01L23/488

CPC分类号： H01L23/488 ,  H01L23/481 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13649 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/16145 ,  H01L2224/16501 ,  H01L2224/29147 ,  H01L2224/29564 ,  H01L2224/2957 ,  H01L2224/2958 ,  H01L2224/29649 ,  H01L2224/29655 ,  H01L2224/29657 ,  H01L2224/29666 ,  H01L2224/29676 ,  H01L2224/29681 ,  H01L2224/29684 ,  H01L2224/32501 ,  H01L2224/80075 ,  H01L2224/80097 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/8183 ,  H01L2224/81895 ,  H01L2224/83005 ,  H01L2224/83193 ,  H01L2224/8383 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2924/00

摘要： At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.

公开(公告)号：US20130200520A1

公开(公告)日：2013-08-08

申请号：US13826830

申请日：2013-03-14

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Son V. Nguyen

IPC分类号： H01L23/488

CPC分类号： H01L23/488 ,  H01L23/481 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13649 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/16145 ,  H01L2224/16501 ,  H01L2224/29147 ,  H01L2224/29564 ,  H01L2224/2957 ,  H01L2224/2958 ,  H01L2224/29649 ,  H01L2224/29655 ,  H01L2224/29657 ,  H01L2224/29666 ,  H01L2224/29676 ,  H01L2224/29681 ,  H01L2224/29684 ,  H01L2224/32501 ,  H01L2224/80075 ,  H01L2224/80097 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/8183 ,  H01L2224/81895 ,  H01L2224/83005 ,  H01L2224/83193 ,  H01L2224/8383 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2924/00

摘要： At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.

摘要翻译： 在第一器件晶片的至少Cu表面上形成至少一个金属粘附层。 具有另一Cu表面的第二器件晶片被定位在第一器件晶片的Cu表面的顶部和至少一个金属粘附层上。 然后将第一和第二器件晶片结合在一起。 接合包括将器件晶片加热到低于400℃的温度，有或没有施加外部施加的压力。 在加热期间，两个Cu表面结合在一起，并且至少一个金属粘附层从两个Cu表面获得氧原子，并在Cu表面之间形成至少一个金属氧化物结合层。