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公开(公告)号：US11961789B2
公开(公告)日：2024-04-16
申请号：US17074652
申请日：2020-10-20
发明人： Chen-Hua Yu , Chun-Hui Yu , Kuo-Chung Yee
IPC分类号： H01L23/552 , H01L21/56 , H01L21/683 , H01L23/00 , H01L23/31 , H01L23/495 , H01L23/528 , H01L23/538 , H01L23/498
CPC分类号： H01L23/49503 , H01L21/56 , H01L21/561 , H01L21/6835 , H01L23/3114 , H01L23/5389 , H01L24/02 , H01L24/06 , H01L24/18 , H01L24/19 , H01L24/20 , H01L24/25 , H01L24/96 , H01L24/97 , H01L21/568 , H01L23/3128 , H01L23/49816 , H01L24/05 , H01L2221/68359 , H01L2221/68372 , H01L2224/023 , H01L2224/02375 , H01L2224/02381 , H01L2224/024 , H01L2224/0401 , H01L2224/04105 , H01L2224/05558 , H01L2224/05569 , H01L2224/05572 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05684 , H01L2224/0603 , H01L2224/06051 , H01L2224/06102 , H01L2224/06181 , H01L2224/09051 , H01L2224/09055 , H01L2224/12105 , H01L2224/14181 , H01L2224/18 , H01L2224/225 , H01L2224/24137 , H01L2224/32225 , H01L2224/73267 , H01L2224/82 , H01L2224/82986 , H01L2224/92244 , H01L2224/97 , H01L2225/1035 , H01L2924/18162 , H01L2924/37001 , H01L2224/97 , H01L2224/83 , H01L2224/05647 , H01L2924/00014 , H01L2224/05655 , H01L2924/00014 , H01L2224/05666 , H01L2924/00014 , H01L2224/05684 , H01L2924/00014 , H01L2224/05647 , H01L2924/014 , H01L2924/00014 , H01L2224/05655 , H01L2924/014 , H01L2924/00014 , H01L2224/05666 , H01L2924/014 , H01L2924/00014 , H01L2224/05684 , H01L2924/014 , H01L2924/00014
摘要： A semiconductor package includes a chip, a redistribution structure, and first under-ball metallurgies patterns. The chip includes conductive posts exposed at an active surface. The redistribution structure is disposed on the active surface. The redistribution structure includes a first dielectric layer, a topmost metallization layer, and a second dielectric layer. The first dielectric layer includes first openings exposing the conductive posts of the chip. The topmost metallization layer is disposed over the first dielectric layer and is electrically connected to the conductive posts. The topmost metallization layer comprises first contact pads and routing traces connected to the first contact pads. The second dielectric layer is disposed on the topmost metallization layer and includes second openings exposing the first contact pads. The first under-ball metallurgies patterns are disposed on the first contact pads, extending on and contacting sidewalls and top surfaces of the first contact pads.
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公开(公告)号：US20240128236A1
公开(公告)日：2024-04-18
申请号：US18359031
申请日：2023-07-26
发明人： Hyoeun Kim , Dohyun Kim , Sunkyoung Seo
IPC分类号： H01L25/065 , H01L21/66 , H01L23/00
CPC分类号： H01L25/0657 , H01L22/32 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/09 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/80 , H01L2224/05073 , H01L2224/05124 , H01L2224/05147 , H01L2224/0603 , H01L2224/08059 , H01L2224/08145 , H01L2224/09055 , H01L2224/09515 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/80203 , H01L2224/80895 , H01L2224/80896 , H01L2225/06517 , H01L2225/06541 , H01L2924/37001
摘要： A semiconductor package includes a first semiconductor chip and a second semiconductor chip on the first semiconductor chip. The first semiconductor chip includes a first wiring layer on a first substrate, and a first passivation layer on the first wiring layer and that exposes at least portions of first bonding pads and a first test pad that are on the second wiring layer. The second semiconductor chip includes a second wiring layer on a second substrate and a second passivation layer on the second wiring layer and that exposes at least portions of third bonding pads and second test pad that are provided on the second wiring layer. The first bonding pads and respective ones of the third bonding pads are directly bonded to each other. The first passivation layer and the second passivation layer are directly bonded to each other.
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公开(公告)号：US20240355768A1
公开(公告)日：2024-10-24
申请号：US18761443
申请日：2024-07-02
申请人： Intel Corporation
发明人： Adel A. Elsherbini , Krishna Bharath , Kevin P. O'Brien , Kimin Jun , Han Wui Then , Mohammad Enamul Kabir , Gerald S. Pasdast , Feras Eid , Aleksandar Aleksov , Johanna M. Swan , Shawna M. Liff
IPC分类号： H01L23/00 , H01L25/065
CPC分类号： H01L24/08 , H01L24/05 , H01L24/29 , H01L24/32 , H01L25/0657 , H01L28/10 , H01L2224/05147 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/0801 , H01L2224/08145 , H01L2224/0903 , H01L2224/09055 , H01L2224/09505 , H01L2224/29186 , H01L2224/32145
摘要： Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes at least part of an inductor.
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公开(公告)号：US09570446B1
公开(公告)日：2017-02-14
申请号：US14974275
申请日：2015-12-18
申请人： Hyo Seok Woo , In Mo Kim , Bora Lee , Sun Young Kim , Hoo Sung Cho
发明人： Hyo Seok Woo , In Mo Kim , Bora Lee , Sun Young Kim , Hoo Sung Cho
IPC分类号： H01L23/48 , G01R31/28 , H01L23/485 , G01R1/067 , H01L27/105 , H01L23/00 , H01L23/522 , H01L21/66
CPC分类号： H01L22/32 , G01R1/067 , G01R31/28 , G11C5/025 , G11C29/1201 , G11C29/48 , G11C2029/5602 , H01L22/34 , H01L24/09 , H01L2224/08055 , H01L2224/09055
摘要： A semiconductor device includes a plurality of semiconductor devices, a plurality of metal lines electrically connected to at least one of the semiconductor devices, and a protective layer on the metal lines. The protective layer includes a plurality of open areas partially exposing the metal lines and which serves as pads. A first pad includes a first area that extends from at least one of the metal lines and at least one second area around and separated from the first area.
摘要翻译： 半导体器件包括多个半导体器件，电连接到至少一个半导体器件的多个金属线以及金属线上的保护层。 保护层包括部分地露出金属线并用作垫的多个开放区域。 第一垫包括从金属线中的至少一个延伸的第一区域和围绕第一区域分离的至少一个第二区域。
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公开(公告)号：US20100071946A1
公开(公告)日：2010-03-25
申请号：US12561526
申请日：2009-09-17
申请人： Nobuaki HASHIMOTO
发明人： Nobuaki HASHIMOTO
CPC分类号： H05K3/305 , G02F1/13458 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/27 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/80 , H01L24/83 , H01L2224/02311 , H01L2224/02313 , H01L2224/02373 , H01L2224/02377 , H01L2224/02379 , H01L2224/02381 , H01L2224/0239 , H01L2224/0331 , H01L2224/0332 , H01L2224/03515 , H01L2224/0361 , H01L2224/0362 , H01L2224/03831 , H01L2224/0519 , H01L2224/05191 , H01L2224/05548 , H01L2224/05551 , H01L2224/05553 , H01L2224/05556 , H01L2224/05572 , H01L2224/05582 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/0569 , H01L2224/05691 , H01L2224/061 , H01L2224/06155 , H01L2224/06505 , H01L2224/08058 , H01L2224/08238 , H01L2224/09055 , H01L2224/2731 , H01L2224/2732 , H01L2224/27515 , H01L2224/2761 , H01L2224/27825 , H01L2224/27831 , H01L2224/29008 , H01L2224/29011 , H01L2224/29013 , H01L2224/29017 , H01L2224/29023 , H01L2224/29082 , H01L2224/29101 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/2919 , H01L2224/29191 , H01L2224/29563 , H01L2224/2957 , H01L2224/29582 , H01L2224/29624 , H01L2224/29644 , H01L2224/29647 , H01L2224/29655 , H01L2224/29664 , H01L2224/29666 , H01L2224/29671 , H01L2224/29684 , H01L2224/301 , H01L2224/30155 , H01L2224/30505 , H01L2224/32058 , H01L2224/32238 , H01L2224/33055 , H01L2224/80194 , H01L2224/80203 , H01L2224/80385 , H01L2224/80424 , H01L2224/80444 , H01L2224/80447 , H01L2224/80488 , H01L2224/8085 , H01L2224/80862 , H01L2224/8088 , H01L2224/80902 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83203 , H01L2224/83385 , H01L2224/834 , H01L2224/83424 , H01L2224/83444 , H01L2224/83447 , H01L2224/83488 , H01L2224/8385 , H01L2224/83862 , H01L2224/8388 , H01L2224/83902 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/12041 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H05K3/325 , H05K2201/0367 , H05K2201/0382 , H05K2201/091 , H05K2201/10674 , H05K2201/10977 , Y02P70/613 , H01L2924/00014 , H01L2924/01023 , H01L2924/00 , H01L2924/01022 , H01L2924/01028
摘要： An electronic component mounting structure includes: an electronic component including a plurality of bump electrodes that includes a base resin provided on an active face of the electronic component and a plurality of conductive films that cover a part of a surface of the base resin, expose an area excluding the part of the surface, and are electrically coupled to a plurality of electrode terminals provided on the active face; and a substrate including a plurality of terminals. In the structure, the electronic component is mounted on the substrate, and the base resin includes: a first opening surrounding the plurality of the electrode terminals; a connection portion in which a part of one ends of the plurality of the conductive films that are drawn out on the surface of the base resin is disposed, the other ends of the conductive films being coupled to the electrode terminals; and a bonding portion that is bonded to the substrate, and is formed in an area excluding the first opening and the connection portion, and an elastic deformation of the base resin at the connection portion allows the bonding portion to bond the substrate so as to maintain the conductive films and the plurality of the terminals on the substrate in a bonded state.
摘要翻译： 电子部件安装结构包括：电子部件，包括多个突起电极，所述突起电极包括设置在所述电子部件的有效面上的基体树脂和覆盖所述基础树脂的表面的一部分的多个导电膜， 并且电耦合到设置在有源面上的多个电极端子; 以及包括多个端子的基板。 在该结构中，电子部件安装在基板上，基体树脂包括：围绕多个电极端子的第一开口; 所述多个导电膜的一端的一部分被设置在所述基体树脂的表面上的连接部，所述导电膜的另一端与所述电极端子连接; 以及接合部，其接合到所述基板，并且形成在除了所述第一开口和所述连接部之外的区域中，并且所述基部树脂在所述连接部处的弹性变形使得所述接合部分接合所述基板以便保持 导电膜和处于接合状态的基板上的多个端子。
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公开(公告)号：US12107060B2
公开(公告)日：2024-10-01
申请号：US17025843
申请日：2020-09-18
申请人： Intel Corporation
发明人： Adel A. Elsherbini , Zhiguo Qian , Gerald S. Pasdast , Mohammad Enamul Kabir , Han Wui Then , Kimin Jun , Kevin P. O'Brien , Johanna M. Swan , Shawna M. Liff , Aleksandar Aleksov , Feras Eid
IPC分类号： H01L23/00 , H01L25/065 , H01L49/02
CPC分类号： H01L24/08 , H01L24/05 , H01L24/29 , H01L24/32 , H01L25/0657 , H01L28/10 , H01L2224/05147 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/0801 , H01L2224/08145 , H01L2224/0903 , H01L2224/09055 , H01L2224/29186 , H01L2224/32145
摘要： Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes at least part of an inductor.
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公开(公告)号：US20240304580A1
公开(公告)日：2024-09-12
申请号：US18663124
申请日：2024-05-14
发明人： WEN-CHUAN TAI , FAN HU , HSIANG-FU CHEN , LI-CHUN PENG
CPC分类号： H01L24/08 , H01L21/50 , H01L23/10 , H01L24/09 , H01L24/80 , H01L2224/0801 , H01L2224/08053 , H01L2224/08059 , H01L2224/08221 , H01L2224/0903 , H01L2224/09055 , H01L2224/80203 , H01L2224/80805 , H01L2224/8083 , H01L2224/80895 , H01L2924/1611 , H01L2924/1616 , H01L2924/16235 , H01L2924/1631 , H01L2924/16315 , H01L2924/1632
摘要： A bonding method and a bonding structure are provided. A device substrate is provided including a plurality of semiconductor devices, wherein each of the semiconductor devices includes a first bonding layer. A cap substrate is provided including a plurality of cap structures, wherein each of the cap structures includes a second bonding layer, the second bonding layer having a planar surface and a first protrusion protruding from the planar surface. The device substrate is bonded to the cap substrate by engaging the first protrusion of the second bonding layer of each of the cap structures with the corresponding first bonding layer of each of the semiconductor devices in the device substrate.
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公开(公告)号：US12015001B2
公开(公告)日：2024-06-18
申请号：US17695815
申请日：2022-03-15
发明人： Wen-Chuan Tai , Fan Hu , Hsiang-Fu Chen , Li-Chun Peng
CPC分类号： H01L24/08 , H01L21/50 , H01L23/10 , H01L24/09 , H01L24/80 , H01L2224/0801 , H01L2224/08053 , H01L2224/08059 , H01L2224/08221 , H01L2224/0903 , H01L2224/09055 , H01L2224/80203 , H01L2224/80805 , H01L2224/8083 , H01L2224/80895 , H01L2924/1611 , H01L2924/1616 , H01L2924/16235 , H01L2924/1631 , H01L2924/16315 , H01L2924/1632
摘要： A bonding method and a bonding structure are provided. A device substrate is provided including a plurality of semiconductor devices, wherein each of the semiconductor devices includes a first bonding layer. A cap substrate is provided including a plurality of cap structures, wherein each of the cap structures includes a second bonding layer, the second bonding layer having a planar surface and a first protrusion protruding from the planar surface. The device substrate is bonded to the cap substrate by engaging the first protrusion of the second bonding layer of each of the cap structures with the corresponding first bonding layer of each of the semiconductor devices in the device substrate.
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公开(公告)号：US20240096760A1
公开(公告)日：2024-03-21
申请号：US18522271
申请日：2023-11-29
发明人： Chen-Hua Yu , Chun-Hui Yu , Kuo-Chung Yee
IPC分类号： H01L23/495 , H01L21/56 , H01L21/683 , H01L23/00 , H01L23/31 , H01L23/538
CPC分类号： H01L23/49503 , H01L21/56 , H01L21/561 , H01L21/6835 , H01L23/3114 , H01L23/5389 , H01L24/02 , H01L24/06 , H01L24/18 , H01L24/19 , H01L24/20 , H01L24/25 , H01L24/96 , H01L24/97 , H01L21/568 , H01L23/3128 , H01L23/49816 , H01L24/05 , H01L2221/68359 , H01L2221/68372 , H01L2224/023 , H01L2224/02375 , H01L2224/02381 , H01L2224/024 , H01L2224/0401 , H01L2224/04105 , H01L2224/05558 , H01L2224/05569 , H01L2224/05572 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05684 , H01L2224/0603 , H01L2224/06051 , H01L2224/06102 , H01L2224/06181 , H01L2224/09051 , H01L2224/09055 , H01L2224/12105 , H01L2224/14181 , H01L2224/18 , H01L2224/225 , H01L2224/24137 , H01L2224/32225 , H01L2224/73267 , H01L2224/82 , H01L2224/82986 , H01L2224/92244 , H01L2224/97 , H01L2225/1035 , H01L2924/18162 , H01L2924/37001
摘要： A semiconductor package includes a chip, a redistribution structure, and first under- ball metallurgies patterns. The chip includes conductive posts exposed at an active surface. The redistribution structure is disposed on the active surface. The redistribution structure includes a first dielectric layer, a topmost metallization layer, and a second dielectric layer. The first dielectric layer includes first openings exposing the conductive posts of the chip. The topmost metallization layer is disposed over the first dielectric layer and is electrically connected to the conductive posts. The topmost metallization layer comprises first contact pads and routing traces connected to the first contact pads. The second dielectric layer is disposed on the topmost metallization layer and includes second openings exposing the first contact pads. The first under-ball metallurgies patterns are disposed on the first contact pads, extending on and contacting sidewalls and top surfaces of the first contact pads.
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公开(公告)号：US12062631B2
公开(公告)日：2024-08-13
申请号：US17025181
申请日：2020-09-18
申请人： Intel Corporation
发明人： Adel A Elsherbini , Krishna Bharath , Kevin P. O'Brien , Kimin Jun , Han Wui Then , Mohammad Enamul Kabir , Gerald S. Pasdast , Feras Eid , Aleksandar Aleksov , Johanna M. Swan , Shawna M. Liff
IPC分类号： H01L23/00 , H01L25/065 , H01L49/02
CPC分类号： H01L24/08 , H01L24/05 , H01L24/29 , H01L24/32 , H01L25/0657 , H01L28/10 , H01L2224/05147 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/0801 , H01L2224/08145 , H01L2224/0903 , H01L2224/09055 , H01L2224/09505 , H01L2224/29186 , H01L2224/32145
摘要： Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes at least part of an inductor.
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