公开(公告)号：US20080197505A1

公开(公告)日：2008-08-21

申请号：US12032730

申请日：2008-02-18

申请人： Tatsuhiko ASAKAWA

发明人： Tatsuhiko ASAKAWA

IPC分类号： H01L23/485 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0236 ,  H01L2224/0401 ,  H01L2224/11515 ,  H01L2224/1191 ,  H01L2224/13008 ,  H01L2224/1319 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/1369 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/0665 ,  H01L2924/00014

摘要： A semiconductor device includes: a semiconductor substrate that has an integrated circuit, a passivation film formed above the integrated circuit, and an electrode electrically connected to the integrated circuit, the passivation film having an uneven surface, the electrode having at least a portion exposed through the passivation film; a first resin layer that is disposed on the passivation film; a second resin layer that covers the passivation film and the first resin layer; and a wiring that extends from the electrode to a first part of the second resin layer above the first resin layer, the electrode passing on a second part of the second resin layer above the passivation film.

摘要翻译： 半导体器件包括：具有集成电路的半导体衬底，形成在集成电路上方的钝化膜，以及与该集成电路电连接的电极，该钝化膜具有不平坦表面，该电极具有至少部分暴露于 钝化膜; 设置在所述钝化膜上的第一树脂层; 覆盖所述钝化膜和所述第一树脂层的第二树脂层; 以及从电极延伸到第一树脂层上方的第二树脂层的第一部分的布线，电极通过钝化膜上方的第二树脂层的第二部分。

公开(公告)号：US20070010045A1

公开(公告)日：2007-01-11

申请号：US11428705

申请日：2006-07-05

申请人： Tatsuhiko ASAKAWA ,  Shuichi TANAKA ,  Hideo IMAI

发明人： Tatsuhiko ASAKAWA ,  Shuichi TANAKA ,  Hideo IMAI

IPC分类号： H01L21/00

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05671 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13099 ,  H01L2224/1319 ,  H01L2224/136 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device comprises (a) forming a resin layer that includes at least a plurality of a first and a second resin parts, being separated from each other, over a semiconductor substrate having an electrode pad and a passivation film; (b) forming a resin projection in which the first and the second resin parts are integrated by curing the resin layer; and (c) forming a conductive layer that is being connected electrically to the electrode pad and extending over the resin projection, wherein in process (a), the second resin part is formed at least between the electrode pad and the first resin part at a width less than the first resin part.

摘要翻译： 一种制造半导体器件的方法包括：（a）在具有电极焊盘和钝化膜的半导体衬底上形成树脂层，所述树脂层至少包括多个彼此分离的第一和第二树脂部分， （b）通过固化树脂层形成树脂突起，其中第一和第二树脂部分被一体化; 和（c）形成与电极焊盘电连接并延伸到树脂突起上的导电层，其中在工艺（a）中，第二树脂部分至少形成在电极焊盘和第一树脂部分之间， 宽度小于第一树脂部分。

公开(公告)号：US20100201001A1

公开(公告)日：2010-08-12

申请号：US12686575

申请日：2010-01-13

申请人： Tatsuhiko ASAKAWA

发明人： Tatsuhiko ASAKAWA

IPC分类号： H01L23/522 ,  H01L21/283

CPC分类号： H01L24/11 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/11515 ,  H01L2224/1155 ,  H01L2224/1182 ,  H01L2224/11848 ,  H01L2224/13008 ,  H01L2224/13012 ,  H01L2224/1319 ,  H01L2224/13566 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13666 ,  H01L2224/1401 ,  H01L2224/14151 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A method for manufacturing a semiconductor device includes: a) preparing a structure including a semiconductor substrate, an electrode provided on a first surface of the semiconductor substrate, and an insulation film provided on the first surface and having an opening positioned on a first part of the electrode; b) forming a first metal layer from an upper surface of the first part of the electrode to an upper surface of the insulation film; c) forming a resin layer on a first part of the first metal layer, which is positioned on the first part of the electrode, and on the insulation film after the step b); d) removing at least a second part of the resin layer, which is positioned on the first part of the first metal layer, in a manner to leave a first part of the resin layer so as to form a resin protrusion; and e) forming a second metal layer, which is electrically connected with the electrode, from an upper surface of the first metal layer to an upper surface of the resin protrusion.

摘要翻译： 一种制造半导体器件的方法包括：a）制备包括半导体衬底，设置在半导体衬底的第一表面上的电极和设置在第一表面上的绝缘膜的结构，并且具有位于第一部分的第一部分上的开口 电极; b）从所述电极的第一部分的上表面到所述绝缘膜的上表面形成第一金属层; c）在位于电极的第一部分上的第一金属层的第一部分和在步骤b）之后的绝缘膜上形成树脂层; d）以留下树脂层的第一部分的方式去除位于第一金属层的第一部分上的树脂层的至少第二部分，以形成树脂突起; 以及e）形成与所述电极电连接的第二金属层，从所述第一金属层的上表面到所述树脂突起的上表面。

公开(公告)号：US20080197486A1

公开(公告)日：2008-08-21

申请号：US12034204

申请日：2008-02-20

申请人： Tatsuhiko ASAKAWA

发明人： Tatsuhiko ASAKAWA

IPC分类号： H01L23/485 ,  H01L21/60

CPC分类号： H01L24/13 ,  H01L22/32 ,  H01L24/11 ,  H01L24/83 ,  H01L24/90 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/1319 ,  H01L2224/16 ,  H01L2224/90 ,  H01L2924/0001 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/00014 ,  H01L2224/83851

摘要： A semiconductor device includes: a semiconductor substrate that has an integrated circuit and an electrode electrically connected to the integrated circuit; a first resin layer that is formed in a first region overlapping the integrated circuit over a surface of the semiconductor substrate where the electrode is formed; a wiring that is electrically connected to the electrode and is formed on the first resin layer; and a second resin layer that is formed on the surface of the semiconductor substrate in a second region surrounding the first region, is the second resin layer being spaced a distance from the first resin layer.

摘要翻译： 半导体器件包括：半导体衬底，其具有集成电路和电连接到集成电路的电极; 第一树脂层，形成在与形成有电极的半导体衬底的表面上的与集成电路重叠的第一区域中; 电连接到电极并形成在第一树脂层上的布线; 并且在围绕第一区域的第二区域中形成在半导体衬底的表面上的第二树脂层是与第一树脂层间隔一段距离的第二树脂层。