公开(公告)号：US20130075905A1

公开(公告)日：2013-03-28

申请号：US13602581

申请日：2012-09-04

申请人： Ju-il Choi ,  Jeong-Woo Park ,  Jeonggi Jin ,  Hyungseok Kim

发明人： Ju-il Choi ,  Jeong-Woo Park ,  Jeonggi Jin ,  Hyungseok Kim

IPC分类号： H01L23/48 ,  H01L23/532

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05599 ,  H01L2224/13009 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/13562 ,  H01L2224/13583 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13669 ,  H01L2224/13681 ,  H01L2224/13686 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/16503 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/05552

摘要： A semiconductor device includes a substrate and a through via penetrating the substrate. The through via has a protruding portion at a first end thereof extending out from a first surface of the substrate and a second end of the via contacting an interconnection line proximate a second, opposite, end of the substrate. A wetting layer is positioned between the via and the substrate and extends over the protruding portion of the via. The wetting layer includes a material selected to improve an adhesive strength between the wetting layer and a solder ball contacting the wetting layer extending over the protruding portion of the via when a solder ball is coupled to the wetting layer.

摘要翻译： 半导体器件包括基板和穿透基板的贯通孔。 通孔在其第一端处具有从基板的第一表面延伸出的突出部分，并且通孔的第二端接近靠近基板的第二相对端的互连线。 润湿层位于通孔和基底之间并且在通孔的突出部分上延伸。 润湿层包括选择的材料，以便当焊球与润湿层耦合时，改善润湿层与接触润湿层的焊球之间的粘合强度，该润湿层在通孔的突出部分上延伸。

公开(公告)号：US09570377B2

公开(公告)日：2017-02-14

申请号：US14677649

申请日：2015-04-02

申请人： Jeonggi Jin ,  Byung Lyul Park ,  Jisoon Park ,  Sukchul Bang ,  Deokyoung Jung

发明人： Jeonggi Jin ,  Byung Lyul Park ,  Jisoon Park ,  Sukchul Bang ,  Deokyoung Jung

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L23/481 ,  H01L21/6835 ,  H01L21/76805 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/06181 ,  H01L2224/11 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

摘要： Semiconductor devices having through electrodes capped with self-aligned protection layers. The semiconductor device comprises a semiconductor substrate including an integrated circuit formed therein, an interlayer dielectric layer on the semiconductor substrate to cover the integrated circuit, an intermetal dielectric layer having at least one metal line that is provided on the interlayer dielectric layer and is electrically connected to integrated circuit, and a through electrode that vertically penetrates the interlayer dielectric layer and the semiconductor substrate. The through electrode includes a top portion that is capped with a first protection layer capable of preventing a constituent of the through electrode from being diffused away from the through electrode.

摘要翻译： 具有通过电极覆盖有自对准保护层的半导体器件。 半导体器件包括：半导体衬底，其包括形成在其中的集成电路;半导体衬底上的覆盖集成电路的层间介质层;具有至少一个金属线的金属间电介质层，该金属线设置在层间电介质层上并电连接 到集成电路，以及垂直穿透层间电介质层和半导体衬底的贯通电极。 贯通电极包括顶部，该顶部被第一保护层盖住，该第一保护层能够防止通孔的构成物从通孔扩散。

公开(公告)号：US20150287680A1

公开(公告)日：2015-10-08

申请号：US14677649

申请日：2015-04-02

申请人： Jeonggi Jin ,  Byung Lyul Park ,  Jisoon Park ,  Sukchul Bang ,  Deokyoung Jung

发明人： Jeonggi Jin ,  Byung Lyul Park ,  Jisoon Park ,  Sukchul Bang ,  Deokyoung Jung

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L23/481 ,  H01L21/6835 ,  H01L21/76805 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/06181 ,  H01L2224/11 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

摘要： Semiconductor devices having through electrodes capped with self-aligned protection layers. The semiconductor device comprises a semiconductor substrate including an integrated circuit formed therein, an interlayer dielectric layer on the semiconductor substrate to cover the integrated circuit, an intermetal dielectric layer having at least one metal line that is provided on the interlayer dielectric layer and is electrically connected to integrated circuit, and a through electrode that vertically penetrates the interlayer dielectric layer and the semiconductor substrate. The through electrode includes a top portion that is capped with a first protection layer capable of preventing a constituent of the through electrode from being diffused away from the through electrode.

摘要翻译： 具有通过电极覆盖有自对准保护层的半导体器件。 半导体器件包括：半导体衬底，其包括形成在其中的集成电路;半导体衬底上的覆盖集成电路的层间介质层;具有至少一个金属线的金属间介电层，该金属线设置在层间电介质层上并电连接 到集成电路，以及垂直穿透层间电介质层和半导体衬底的贯通电极。 贯通电极包括顶部，该顶部被第一保护层盖住，该第一保护层能够防止通孔的构成物从通孔扩散。

公开(公告)号：US09847276B2

公开(公告)日：2017-12-19

申请号：US14463645

申请日：2014-08-19

申请人： Pil-Kyu Kang ,  Byung Lyul Park ,  SungHee Kang ,  Taeseong Kim ,  Taeyeong Kim ,  Kwangjin Moon ,  Jae-Hwa Park ,  Sukchul Bang ,  Seongmin Son ,  Jin Ho An ,  Ho-Jin Lee ,  Jeonggi Jin

发明人： Pil-Kyu Kang ,  Byung Lyul Park ,  SungHee Kang ,  Taeseong Kim ,  Taeyeong Kim ,  Kwangjin Moon ,  Jae-Hwa Park ,  Sukchul Bang ,  Seongmin Son ,  Jin Ho An ,  Ho-Jin Lee ,  Jeonggi Jin

IPC分类号： H01L29/40 ,  H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having a top surface and a bottom surface facing each other, an interlayer dielectric layer provided on the top surface of the semiconductor substrate and including an integrated circuit, an inter-metal dielectric layer provided on the interlayer dielectric layer and including at least one metal interconnection electrically connected to the integrated circuit, an upper dielectric layer disposed on the inter-metal dielectric layer, a through-electrode penetrating the inter-metal dielectric layer, the interlayer dielectric layer, and the semiconductor substrate, a via-dielectric layer surrounding the through-electrode and electrically insulating the through-electrode from the semiconductor substrate. The via-dielectric layer includes one or more air-gaps between the upper dielectric layer and the interlayer dielectric layer.