公开(公告)号：US20160376147A1

公开(公告)日：2016-12-29

申请号：US15171002

申请日：2016-06-02

Applicant: Nivarox-FAR S.A.

Inventor： Alex Gandelhman ,  Andre Pin

IPC: B81C1/00 ,  G04D99/00

CPC classification number: B81C1/00619 ,  B81B2201/035 ,  B81B2203/0384 ,  B81C1/00103 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0138 ,  B81C2201/014 ,  B81C2201/0188 ,  B81C2201/0198 ,  G04B13/02 ,  G04B13/026 ,  G04B13/027 ,  G04D99/00

Abstract: The invention relates to a silicon-based component with at least one reduced contact surface which, formed from a method combining at least one oblique side wall etching step with a “Bosch” etch of vertical side walls, improves, in particular, the tribology of components formed by micromachining a silicon-based wafer.

Abstract translation: 本发明涉及具有至少一个还原接触表面的硅基组分，其由至少一个倾斜侧壁蚀刻步骤与垂直侧壁的“博世”蚀刻法组合的方法形成，特别是改进了摩擦学 通过微加工硅基晶片形成的部件。

公开(公告)号：US09466464B1

公开(公告)日：2016-10-11

申请号：US14694710

申请日：2015-04-23

Applicant: Multibeam Corporation

Inventor： David K. Lam ,  Kevin M. Monahan ,  Michael C. Smayling ,  Theodore A. Prescop

IPC: H01J37/30 ,  H01J37/305 ,  H01J37/22 ,  H01J37/05 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.

Abstract translation: 用于使用没有光掩模并且没有抗蚀剂层的带电粒子束来图案化衬底的方法，装置和系统。 材料可以从设计布局数据库指导的基板上移除，该设计布局数据库被定位到由多个匹配的带电粒子束瞄准的位置。 在局部材料去除中减少工艺步骤的数量和消除光刻步骤具有减少制造周期时间并通过降低缺陷引入概率来提高产量的双重优点。 此外，高度局部化的精密材料去除允许控制的去除速率的变化，并且能够创建3D结构或轮廓。 本地气体注入器和检测器以及本地光子注入器和检测器对应于相应的列是局部的，并且可以用于促进快速，准确的靶向基板处理。

公开(公告)号：US09453281B1

公开(公告)日：2016-09-27

申请号：US14745463

申请日：2015-06-21

Applicant: Multibeam Corporation

Inventor： Theodore A. Prescop ,  Kevin M. Monahan ,  David K. Lam ,  Michael C. Smayling

IPC: C23C16/48 ,  H01J37/08 ,  H01J37/30 ,  H01J37/244 ,  H01J37/06

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.

Abstract translation: 用于使用没有光掩模并且没有抗蚀剂层的带电粒子束来图案化衬底的方法，装置和系统。 材料可以沉积到衬底上，如设计布局数据库所指示的那样，被定位到由多个匹配的带电粒子束柱靶向的位置上。 减少工艺步骤的数量和消除光刻步骤在局部化材料添加中具有减少制造周期时间并通过降低缺陷引入概率来提高产量的双重优点。 此外，高度局部化的精密材料沉积允许沉积速率的受控变化并且能够创建3D结构。 局部气体注入器和检测器以及本地光子注入器和检测器对于相应的列是局部的，并且可以用于促进快速，准确，有针对性的高度可配置的衬底处理，有利地使用所述束柱的大阵列。

公开(公告)号：US20130187169A1

公开(公告)日：2013-07-25

申请号：US13797549

申请日：2013-03-12

Applicant: The Aerospace Corporation

Inventor： David P. TAYLOR ,  Margaret H. ABRAHAM

IPC: H01L21/285

CPC classification number: H01L21/28506 ,  B81B2203/0109 ,  B81C1/00373 ,  B81C2201/0176 ,  B81C2201/0188 ,  C23C16/01 ,  C23C16/04 ,  C23C16/18 ,  C23C16/46 ,  C23C16/481 ,  C23C16/483 ,  G01J5/024 ,  G02B5/285 ,  H01L21/3065 ,  H01L27/13 ,  H01L28/40 ,  H01L28/87

Abstract: Embodiments of the present invention provide systems and methods for depositing materials on either side of a freestanding film using selectively thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same. A freestanding film, which is suspended over a cavity defined in a substrate, is exposed to a fluidic CVD precursor that reacts to form a solid material when exposed to heat. The freestanding film is then selectively heated in the presence of the precursor. The CVD precursor preferentially deposits on the surface(s) of the freestanding film.

Abstract translation: 本发明的实施例提供了使用选择性热辅助化学气相沉积（STA-CVD）在独立膜的任一侧上沉积材料的系统和方法，以及使用其形成的结构。 悬浮在限定在基底中的空腔上的独立膜暴露于当暴露于热时反应以形成固体材料的流化CVD前体。 然后在前体存在下选择性地加热独立的薄膜。 CVD前体优先沉积在独立膜的表面上。

公开(公告)号：US20130057557A1

公开(公告)日：2013-03-07

申请号：US13227246

申请日：2011-09-07

Applicant: Ravindra Vaman Shenoy ,  Philip Jason Stephanou ,  Ana Rangelova Londergan ,  Evgeni Petrovich Gousev

Inventor： Ravindra Vaman Shenoy ,  Philip Jason Stephanou ,  Ana Rangelova Londergan ,  Evgeni Petrovich Gousev

IPC: G06T1/00 ,  G06F1/16 ,  H01F27/30 ,  B32B15/00 ,  B32B3/00 ,  F28D15/04 ,  C23F1/02 ,  H01G4/30 ,  H01F5/00

CPC classification number: B81C1/0038 ,  B81B2203/0392 ,  B81C2201/0107 ,  B81C2201/0188 ,  B81C2201/038 ,  C23C18/1653 ,  C25D5/10 ,  C25D5/18 ,  C25D5/48 ,  C25D7/00 ,  Y02T50/6765 ,  Y10T428/12493 ,  Y10T428/24612

Abstract: This disclosure provides implementations of high surface area stacked layered metallic structures, devices, apparatus, systems, and related methods. A plurality of stacked layers on a substrate may be manufactured from a plating bath including a first metal and a second metal. A modulated plating current can deposit alternate first metal layers and alloy layers, the alloy layers including the first metal and the second metal. Gaps between the alloy layers can be formed by selectively etching some portions of the first metal layers to define a stacked layered structure. Stacked layered structures may be useful in applications to form capacitors, inductors, catalytic reactors, heat transfer tubes, non-linear springs, filters, batteries, and heavy metal purifiers.

Abstract translation: 本公开提供了高表面积堆叠层状金属结构，装置，装置，系统和相关方法的实施方式。 可以由包括第一金属和第二金属的电镀浴制造衬底上的多个层叠层。 调制的电镀电流可以沉积交替的第一金属层和合金层，合金层包括第一金属和第二金属。 可以通过选择性地蚀刻第一金属层的一些部分以限定堆叠的层状结构来形成合金层之间的间隙。 堆叠的分层结构可用于形成电容器，电感器，催化反应器，传热管，非线性弹簧，过滤器，电池和重金属净化器。

公开(公告)号：US20040004002A1

公开(公告)日：2004-01-08

申请号：US10434493

申请日：2003-05-07

Applicant: MEMGen Corporation

Inventor： Jeffrey A. Thompson ,  Adam L. Cohen ,  Michael S. Lockard ,  Dennis R. Smalley

IPC: C25D005/02

CPC classification number: B81C1/00126 ,  B33Y10/00 ,  B33Y70/00 ,  B81C2201/0181 ,  B81C2201/0188 ,  B81C2201/019

Abstract: Multilayer structures are electrochemically fabricated on a temporary (e.g. conductive) substrate and are thereafter bonded to a permanent (e.g. dielectric, patterned, multi-material, or otherwise functional) substrate and removed from the temporary substrate. In some embodiments, the structures are formed from top layer to bottom layer, such that the bottom layer of the structure becomes adhered to the permanent substrate, while in other embodiments the structures are form from bottom layer to top layer and then a double substrate swap occurs. The permanent substrate may be a solid that is bonded (e.g. by an adhesive) to the layered structure or it may start out as a flowable material that is solidified adjacent to or partially surrounding a portion of the structure with bonding occurs during solidification. The multilayer structure may be released from a sacrificial material prior to attaching the permanent substrate or it may be released after attachment.

Abstract translation: 多层结构在临时的（例如导电的）衬底上电化学地制造，然后在永久（例如电介质，图案化，多材料或其他功能）的衬底上结合并从临时衬底去除。 在一些实施例中，结构由顶层到底层形成，使得结构的底层变得粘附到永久性基底上，而在其它实施例中，结构是从底层到顶层形成的，然后是双层衬底交换 发生。 永久性基材可以是与层状结构结合的固体（例如通过粘合剂），或者可以作为在凝固期间发生结合而在结构的一部分附近凝固的可流动材料开始。 多层结构可以在附着永久性基底之前从牺牲材料上释放，或者在附着后可以释放多层结构。

公开(公告)号：US06507989B1

公开(公告)日：2003-01-21

申请号：US08816662

申请日：1997-03-13

Applicant: Ned B. Bowden ,  Andreas W. Terfort ,  Jeffrey D. Carbeck ,  George M. Whitesides

Inventor： Ned B. Bowden ,  Andreas W. Terfort ,  Jeffrey D. Carbeck ,  George M. Whitesides

IPC: H01S400

CPC classification number: H01L24/95 ,  B81C1/00373 ,  B81C2201/0188 ,  H01L25/50 ,  H01L2224/45144 ,  H01L2224/95085 ,  H01L2224/95136 ,  H01L2224/95144 ,  H01L2224/95145 ,  H01L2224/95146 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/19041 ,  H01L2924/19043 ,  Y10T29/49002 ,  H01L2924/00

Abstract: Self-assembling systems include component articles that can be pinned at a fluid/fluid interface, or provided in a fluid, or provided in proximity of a surface, and caused to self-assemble optionally via agitation. A self-assembling electrical circuit is provided.

Abstract translation: 自组装系统包括可以被固定在流体/流体界面处或设置在流体中或者设置在表面附近的部件制品，并且可以任选地通过搅动自组装。 提供自组装电路。

公开(公告)号：US5401983A

公开(公告)日：1995-03-28

申请号：US44251

申请日：1993-04-07

Applicant: Nan M. Jokerst ,  Martin A. Brooke ,  Mark G. Allen

Inventor： Nan M. Jokerst ,  Martin A. Brooke ,  Mark G. Allen

IPC: H01L27/00 ,  H01L21/20 ,  H01L21/78 ,  H01L27/146 ,  H01L31/12 ,  H01L33/00 ,  H01S5/02 ,  H01S5/183

CPC classification number: H01L21/78 ,  B81C1/00373 ,  H01L21/2007 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14694 ,  H01L33/0062 ,  B81C2201/0188 ,  B81C2201/0194 ,  H01L2221/68368 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/183

Abstract: Various novel lift-off and bonding processes (60, 80, 100) permit lift-off of thin film materials and devices (68), comprising In.sub.x Ga.sub.1-x As.sub.y P.sub.1-y where 0

Abstract translation: 各种新颖的剥离和粘合工艺（60,80,100）允许剥离包括In x Ga 1-x As y P 1-y的薄膜材料和器件（68），其中0

公开(公告)号：US11993011B1

公开(公告)日：2024-05-28

申请号：US17152942

申请日：2021-01-20

Applicant: National Technology & Engineering Solutions of Sandia, LLC

Inventor： Eric Langlois ,  Judith Maria Lavin

IPC: B29C64/209 ,  B33Y30/00 ,  B33Y80/00 ,  B81C1/00 ,  H01J37/04

CPC classification number: B29C64/209 ,  B81C1/00373 ,  H01J37/04 ,  B33Y30/00 ,  B33Y80/00 ,  B81C2201/0188 ,  H01J2237/31732

Abstract: Plasma micro nozzle adapters having various configurations and operating principles are disclosed. The plasma micro nozzle adapter is employed with a commercial plasma jet printer to produce smaller printed features than those possible with the original plasma jet printer. In a first class of embodiments, the plasma micro nozzle adapter narrows a plasma jet using electrostatic or magnetostatic lensing, permitting the printing of ceramic, metallic, dielectric, or plastic features with line widths of 10 μm or less. In a second class of embodiments, the plasma micro nozzle adapter narrows the plasma jet using a gas sheath. By adjusting the flow rate or pressure of the gas used to form the gas sheath, the cross-sectional shape of the plasma jet may form, for example, an ellipse, thereby controlling the width of the printed feature. A third class of embodiments employs both electrostatic (or magnetostatic) lensing along with the gas sheath.

公开(公告)号：US20230219804A1

公开(公告)日：2023-07-13

申请号：US18153795

申请日：2023-01-12

Applicant: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS ,  King Abdullah University of Science and Technology

Inventor： Xuecui ZOU ,  Sally AHMED ,  Hossein FARIBORZI ,  Nizar JABER

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81C1/00158 ,  B81B2201/0278 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/017 ,  B81C2201/0156 ,  B81C2201/0188

Abstract: A MEMS temperature sensor including a clamped-clamped microbeam having a drive electrode on one side configured for applying an AC current, and a sense electrode diagonally situated on the other side, a first anchor at one end and a second anchor at the other end of the microbeam. The first anchor receive a DC bias currents, which heats the microbeam to an operating temperature. The sense electrode is configured to capacitively sense oscillations in the microbeam due to an applied AC current. The MEMS temperature sensor has a three wafer construction in which the components are formed. The device is encapsulated by aluminum, and metal wires connect the first and second anchor, the drive electrode and the sense electrode to side electrode pads outside of the encapsulation. The MEMS temperature sensor has a linear operating region of 30-60 degrees Celsius.