公开(公告)号：US09944512B2

公开(公告)日：2018-04-17

申请号：US15520618

申请日：2015-11-09

申请人： TRONIC'S MICROSYSTEMS

发明人： Joël Collet

IPC分类号： H01L29/84 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00

CPC分类号： B81B3/0051 ,  B81C1/00182 ,  B81C1/00333 ,  B81C2201/0194 ,  B81C2203/051 ,  G01L9/0042

摘要： An electromechanical device includes a stack formed of an insulating layer interposed between two solid layers, and a micromechanical structure of predetermined thickness suspended above a recess of predetermined depth, the recess and the micromechanical structure forming one of the two solid layers of the stack, and the insulating layer forming the bottom of the recess.

公开(公告)号：US09929054B2

公开(公告)日：2018-03-27

申请号：US14968685

申请日：2015-12-14

申请人： Solexel, Inc.

发明人： Takao Yonehara ,  Virendra V. Rana ,  Sean M. Seutter ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani

IPC分类号： H01L21/762 ,  H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L31/18 ,  B23K26/00 ,  B23K26/08 ,  H01L31/0224 ,  H01L31/068 ,  B23K26/70 ,  B23K26/082 ,  B23K26/0622 ,  B81C1/00 ,  B42D25/00 ,  B23K26/244 ,  H01L33/00 ,  B23K101/40 ,  H01L25/065 ,  B23K103/00

CPC分类号： H01L21/7813 ,  B23K26/0006 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/50 ,  B23K26/53 ,  B23K26/702 ,  B23K2101/40 ,  B23K2103/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

公开(公告)号：US09783414B2

公开(公告)日：2017-10-10

申请号：US15386014

申请日：2016-12-21

申请人： QUALCOMM INCORPORATED

发明人： Michael A. Stuber

IPC分类号： H01L21/00 ,  B81C1/00 ,  B81B3/00

CPC分类号： B81C1/00158 ,  B81B3/0021 ,  B81B7/008 ,  B81B2203/0127 ,  B81C1/00269 ,  B81C2201/0194 ,  B81C2203/037 ,  H01L21/2007 ,  H01L21/76256 ,  H01L21/76898 ,  H01L21/7806 ,  H01L21/84 ,  H01L23/481 ,  H01L25/00 ,  H01L27/1203 ,  H01L29/7803 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2224/9202 ,  H01L2924/00

摘要： A semiconductor wafer is formed with a first device layer having active devices. A handle wafer having a trap rich layer is bonded to a top surface of the semiconductor wafer. A second device layer having a MEMS device or acoustic filter device is formed on a bottom surface of the semiconductor wafer. The second device layer is formed either by monolithic fabrication processes or layer-transfer processes.

公开(公告)号：US20170225945A1

公开(公告)日：2017-08-10

申请号：US15412881

申请日：2017-01-23

申请人： X-Celeprint Limited

发明人： Ronald S. Cok

IPC分类号： B81B7/00 ,  B81C3/00

CPC分类号： B81C3/001 ,  B81B2207/012 ,  B81C1/00373 ,  B81C2201/0194 ,  B81C2203/051 ,  B81C2203/0792

摘要： A compound sensor device includes a semiconductor substrate having an active electronic circuit formed in or on the semiconductor substrate. A sensor comprising a sensor substrate including a sensor circuit having an environmental sensor or actuator formed in or on the sensor substrate is micro-transfer printed onto the semiconductor substrate. One or more electrical conductors electrically connects the active electronic circuit to the sensor circuit. The semiconductor substrate comprises a first material and the sensor substrate comprises a second material different from the first material.

公开(公告)号：US20170101309A1

公开(公告)日：2017-04-13

申请号：US15386014

申请日：2016-12-21

申请人： QUALCOMM INCORPORATED

发明人： Michael A. Stuber

IPC分类号： B81C1/00 ,  B81B3/00

CPC分类号： B81C1/00158 ,  B81B3/0021 ,  B81B7/008 ,  B81B2203/0127 ,  B81C1/00269 ,  B81C2201/0194 ,  B81C2203/037 ,  H01L21/2007 ,  H01L21/76256 ,  H01L21/76898 ,  H01L21/7806 ,  H01L21/84 ,  H01L23/481 ,  H01L25/00 ,  H01L27/1203 ,  H01L29/7803 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2224/9202 ,  H01L2924/00

摘要： A semiconductor wafer is formed with a first device layer having active devices. A handle wafer having a trap rich layer is bonded to a top surface of the semiconductor wafer. A second device layer having a MEMS device or acoustic filter device is formed on a bottom surface of the semiconductor wafer. The second device layer is formed either by monolithic fabrication processes or layer-transfer processes.

公开(公告)号：US09365410B2

公开(公告)日：2016-06-14

申请号：US14624071

申请日：2015-02-17

申请人： Robert Bosch GmbH

发明人： Dietmar Haberer

IPC分类号： H01L21/00 ,  B81B3/00 ,  B81B1/00 ,  B81B7/02 ,  B81C1/00

CPC分类号： B81B1/004 ,  B81B7/02 ,  B81B2201/04 ,  B81B2201/047 ,  B81B2203/0353 ,  B81C1/00087 ,  B81C1/00103 ,  B81C2201/0194 ,  B81C2203/0172

摘要： A method for producing a micromechanical component, and a micromechanical component, includes providing a substrate having first and second outer surfaces, the second surface facing away from the first surface; forming a through-hole through the substrate from the first outer surface up to the second outer surface; attaching an optical functional layer, on the second outer surface, to cover the through-hole; removing a first segment of the substrate on the first surface of the substrate so that there arises a third outer surface inclined relative to the second surface, the third surface facing away from the second surface, the inclined surface enclosing the through-hole; and separating the micromechanical component by separating a first part of the substrate, having the through-hole, and a second part, attached to the first part, of the optical functional layer from a remaining part of the substrate and a remaining part of the optical functional layer.

公开(公告)号：US09214353B2

公开(公告)日：2015-12-15

申请号：US13778047

申请日：2013-02-26

申请人： Solexel, Inc.

发明人： Takao Yonehara ,  Virenda V. Rana ,  Sean Seutter ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani

IPC分类号： H01L21/762 ,  H01L21/304 ,  H01L21/268 ,  H01L31/18 ,  B23K26/00 ,  B23K26/06 ,  B23K26/08 ,  B23K26/30 ,  H01L33/00 ,  H01L25/065

CPC分类号： H01L21/7813 ,  B23K26/0006 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/50 ,  B23K26/53 ,  B23K26/702 ,  B23K2101/40 ,  B23K2103/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

摘要翻译： 提供的方法和系统用于使用激光照射从较厚的施主晶片分离和分离含有光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

公开(公告)号：US20150246517A1

公开(公告)日：2015-09-03

申请号：US14251775

申请日：2014-04-14

申请人： Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

发明人： YU-JUN HE ,  DONG-QI LI ,  TIAN-YI LI ,  YANG WEI ,  KAI-LI JIANG ,  SHOU-SHAN FAN

IPC分类号： B32B37/00 ,  B32B37/30 ,  B32B38/08 ,  B32B37/12

CPC分类号： B32B37/025 ,  B32B37/12 ,  B32B37/30 ,  B32B38/08 ,  B32B38/10 ,  B32B2305/22 ,  B32B2309/16 ,  B32B2309/66 ,  B32B2311/04 ,  B32B2311/18 ,  B32B2311/24 ,  B32B2333/12 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0191 ,  B81C2201/0194 ,  B82B3/0014 ,  B82B3/0076

摘要： A method for transferring nanostructures includes providing a growth substrate and a number of nanostructures located on the growth substrate. The nanostructures are transferred by an adhesive layer from the growth substrate to a target substrate. The nanostructures are between the target substrate and the adhesive layer, and at least partial of nanostructures is in contact with a surface of the target substrate. The adhesive layer is covered by a metal layer. The adhesive layer together with the metal layer is separated from the nanostructures and the target substrate in an organic solvent by an external force, wherein the organic solvent permeates into an interface between the adhesive layer and the nanostructures.

摘要翻译： 转移纳米结构的方法包括提供生长衬底和位于生长衬底上的许多纳米结构。 纳米结构通过粘合剂层从生长衬底转移到目标衬底。 纳米结构位于目标基底和粘合剂层之间，并且至少部分纳米结构与目标基底的表面接触。 粘合剂层被金属层覆盖。 粘合剂层与金属层一起通过外力与有机溶剂中的纳米结构和靶基材分离，其中有机溶剂渗入粘合剂层和纳米结构之间的界面。

公开(公告)号：US20150221627A1

公开(公告)日：2015-08-06

申请号：US14576068

申请日：2013-09-25

申请人： Sandia Corporation

发明人： Gregory N. Nielson ,  Carlos Anthony Sanchez ,  Anna Tauke-Pedretti ,  Bonsang Kim ,  Jeffrey Cederberg ,  Murat Okandan ,  Jose Luis Cruz-Campa ,  Paul J. Resnick

IPC分类号： H01L25/00 ,  H01L21/283 ,  H01L21/311 ,  H01L25/065 ,  H01L21/683

CPC分类号： H01L25/50 ,  B81C1/00373 ,  B81C2201/0194 ,  H01L21/283 ,  H01L21/31111 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/80 ,  H01L24/97 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/0401 ,  H01L2224/08145 ,  H01L2224/13005 ,  H01L2224/131 ,  H01L2224/14135 ,  H01L2224/80006 ,  H01L2224/80896 ,  H01L2224/9202 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06568 ,  H01L2224/11 ,  H01L2224/80001 ,  H01L2924/00012 ,  H01L2924/014

摘要： An apparatus is disclosed that includes a first plurality of devices made of a group III-V semiconductor material and a second plurality of devices made of a semiconductor material different than the material of the first plurality of devices that are bonded to the first plurality of devices. The apparatus also includes a dielectric layer surrounding the first plurality of devices and the second plurality of devices to mechanically bond the first plurality of devices to the second plurality of devices.

摘要翻译： 公开了一种装置，其包括由III-V族半导体材料制成的第一多个器件和由与第一多个器件接合的第一多个器件的材料不同的半导体材料制成的第二多个器件 。 该装置还包括围绕第一多个装置的电介质层和第二多个装置，以将第一多个装置机械地结合到第二多个装置。

公开(公告)号：US20150076632A9

公开(公告)日：2015-03-19

申请号：US13604613

申请日：2012-09-05

申请人： Apoorva MURARKA ,  Vladimir BULOVIC ,  Sarah PAYDAVOSI

发明人： Apoorva MURARKA ,  Vladimir BULOVIC ,  Sarah PAYDAVOSI

IPC分类号： B81C1/00 ,  B81B3/00

CPC分类号： B81B3/0021 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C1/00492 ,  B81C2201/0194

摘要： The disclosure provides methods and apparatus for release-assisted microcontact printing of MEMS. Specifically, the principles disclosed herein enable patterning diaphragms and conductive membranes on a substrate having articulations of desired shapes and sizes. Such diaphragms deflect under applied pressure or force (e.g., electrostatic, electromagnetic, acoustic, pneumatic, mechanical, etc.) generating a responsive signal. Alternatively, the diaphragm can be made to deflect in response to an external bias to measure the external bias/phenomenon. The disclosed principles enable transferring diaphragms and/or thin membranes without rupturing.

摘要翻译： 本公开提供了用于MEMS的释放辅助微接触印刷的方法和装置。 具体来说，本文公开的原理使得能够在具有所需形状和尺寸的关节的基底上形成膜片和导电膜。 这种隔膜在施加的压力或力（例如，静电，电磁，声学，气动，机械等）下偏转，产生响应信号。 或者，可以使隔膜响应于外部偏置而偏转以测量外部偏置/现象。 所公开的原理使得能够在不破裂的情况下传送膜片和/或薄膜。