-
公开(公告)号：US20240047565A1
公开(公告)日：2024-02-08
申请号：US18129004
申请日：2023-03-30
发明人： XUAN-ZHANG LI , YANG WEI , SHOU-SHAN FAN , YUE-GANG ZHANG
IPC分类号： H01L29/775 , H01L29/06 , H01L29/786 , H01L29/66
CPC分类号： H01L29/775 , H01L29/0673 , H01L29/78696 , H01L29/66742
摘要： A field effect transistor includes a gate electrode, an insulating layer, a source electrode, a drain electrode, and a channel layer. The insulating layer is located on the surface of the gate electrode, and the channel layer is located on the surface of the insulating layer away from the gate electrode. The source electrode and the drain electrode are spaced apart from each on the surface of the channel layer away from the insulating layer. The source electrode and the drain electrode are one-dimensional structures. The present application further provides a method for making the field effect transistor.
-
公开(公告)号：US20210166888A1
公开(公告)日：2021-06-03
申请号：US16844342
申请日：2020-04-09
发明人： HUA YUAN , Guang Wang , YANG WU , YANG WEI , YUE-GANG ZHANG , SHOU-SHAN FAN
摘要： A supercapacitor is provided. The supercapacitor includes an elastic fiber, an internal electrode, a first electrolyte layer, and an external electrode. The internal electrode, the first electrolyte layer, and the external electrode are sequentially wrapped on an outer surface of the elastic fiber. The internal electrode includes a first carbon nanotube film and a NiO@MnOx composite structure, and the external electrode includes a second carbon nanotube film and a Fe2O3 layer.
-
公开(公告)号：US20210063245A1
公开(公告)日：2021-03-04
申请号：US17084961
申请日：2020-10-30
发明人： Guang Wang , YANG WEI , SHOU-SHAN FAN
摘要： A method for making blackbody radiation source is provided. A blackbody radiation cavity and a carbon nanotube array located on a substrate are provided. A black lacquer layer is coated on an inner surface of the blackbody radiation cavity. A pressure is applied to the carbon nanotube array to form a carbon nanotube paper. The carbon nanotube paper is placed on the black lacquer layer. The substrate is peeled off to make the carbon nanotube paper bond to the black lacquer layer. An adhesive tape is placed on the carbon nanotube paper. And then the adhesive tape peeling off to separate carbon nanotubes in the carbon nanotube paper from the adhesive tape and bond to the black lacquer layer, the carbon nanotubes vertically aligned and forms the carbon nanotube array.
-
公开(公告)号：US20190245484A1
公开(公告)日：2019-08-08
申请号：US16249308
申请日：2019-01-16
发明人： KE ZHANG , YANG WEI , SHOU-SHAN FAN
CPC分类号： H02S50/15 , G01R13/347 , G01R19/0092
摘要： A photocurrent scanning system comprises a laser generating device, a focusing device, a displacement adjustment device, a bias supply device, and a measuring device. The laser generating device is used to emit a laser. The focusing device is used to focus the laser to a surface of a sample. The displacement adjustment device is used to place the sample and adjust a position of the sample, to make the laser focused onto different parts of the surface of the sample. The bias supply device is used to supply a voltage to the sample. The measuring device is used to measure a photocurrent signal flowing through the sample.
-
公开(公告)号：US20190074408A1
公开(公告)日：2019-03-07
申请号：US16177449
申请日：2018-11-01
发明人： YANG WEI , SHOU-SHAN FAN
IPC分类号： H01L33/12 , H01L51/00 , H01L33/00 , C01B32/168 , H01L21/02 , H01L21/67 , C01B21/06 , H01L29/06 , C30B29/40 , C30B25/18 , C30B25/02 , B82Y40/00 , B82Y30/00
摘要： An epitaxial structure and a method for making the same are provided. The epitaxial structure includes a substrate, an epitaxial layer and a carbon nanotube layer. The epitaxial layer is located on the substrate. The carbon nanotube layer is located in the epitaxial layer. The method includes following. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is suspended above the epitaxial growth surface. An epitaxial layer is epitaxially grown from the epitaxial growth surface to enclose the carbon nanotube layer therein. The epitaxial layer is a substantially homogenous material from the substrate.
-
公开(公告)号：US20180342679A1
公开(公告)日：2018-11-29
申请号：US15916390
申请日：2018-03-09
发明人： JIN ZHANG , YANG WEI , KAI-LI JIANG , SHOU-SHAN FAN
IPC分类号： H01L51/00 , B82Y30/00 , H01L29/06 , H01L21/02 , H01L29/417
CPC分类号： H01L51/0048 , B82Y30/00 , H01L21/02425 , H01L21/02631 , H01L29/0673 , H01L29/41725 , H01L51/444
摘要： A semiconductor structure includes a semiconductor layer, a carbon nanotube and a conductive film. The semiconductor layer includes a first surface and a second surface. A thickness of the semiconductor layer ranges from 1 nanometer to 100 nanometers. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method. The carbon nanotube, the semiconductor layer and the conductive film are stacked with each other to form a three-layered stereoscopic structure.
-
公开(公告)号：US20180315937A1
公开(公告)日：2018-11-01
申请号：US15687619
申请日：2017-08-28
发明人： HAO-MING WEI , YANG WEI , KAI-LI JIANG , SHOU-SHAN FAN
摘要： A method for forming an organic thin film transistor is provided. An interdigital electrode layer is located on a surface of the insulating substrate. An organic semiconductor layer is formed on a surface of the interdigital electrode layer. An insulating layer is located to cover the organic semiconductor layer. A gate electrode is formed on the insulating layer. A method for forming the organic semiconductor layer is provided. An evaporating source is provided, and the evaporating source and the interdigital electrode layer are spaced from each other. The carbon nanotube film structure is heated to gasify an organic semiconductor material to form the organic semiconductor layer on an interdigital electrode layer surface.
-
公开(公告)号：US20180118564A1
公开(公告)日：2018-05-03
申请号：US15662221
申请日：2017-07-27
发明人： DONG-QI LI , YANG WEI , KAI-LI JIANG , SHOU-SHAN FAN
CPC分类号： B82B3/009 , G01N23/04 , H01L51/0031 , H01L51/0048
摘要： A method for distinguishing carbon nanotubes comprising: providing a conductive substrate and applying an insulating layer on the conductive substrate; forming a carbon nanotube structure on a surface of the insulating layer, the carbon nanotube structure includes at least one carbon nanotube; placing the carbon nanotube structure under a scanning electron microscope, adjusting the scanning electron microscope with an accelerating voltage ranging from 5˜20 KV, a dwelling time ranging 6˜20 microseconds and a magnification ranging from 10000˜100000 times; taking photos of the carbon nanotube structure with the scanning electron microscope; and, obtaining a photo of the carbon nanotube structure, the photo shows the at least one carbon nanotube and a background.
-
公开(公告)号：US20180099746A1
公开(公告)日：2018-04-12
申请号：US15714004
申请日：2017-09-25
发明人： HE MA , YANG WEI , KAI LIU , KAI-LI JIANG , SHOU-SHAN FAN
CPC分类号： B64C39/028 , B64C33/02 , B64C2201/025 , B64C2201/042 , B64C2201/127
摘要： The disclosure relates to a biomimetic insect. The biomimetic insect includes a trunk and at least two wings connected to the trunk. The wing includes a carbon nanotube layer and a vanadium dioxide layer (VO2) layer stacked with each other. Because the drastic, reversible phase transition of vanadium dioxide, the wing has giant deformation amplitude and fast response.
-
公开(公告)号：US20180006251A1
公开(公告)日：2018-01-04
申请号：US15479240
申请日：2017-04-04
发明人： JIN ZHANG , YANG WEI , KAI-LI JIANG , SHOU-SHAN FAN
CPC分类号： H01L51/0562 , H01L51/0012 , H01L51/0017 , H01L51/0026 , H01L51/0029 , H01L51/003 , H01L51/0031 , H01L51/0048 , H01L51/0558 , H01L2251/301
摘要： The present disclosure relates to a method for making nanoscale heterostructure. The method includes: forming a first carbon nanotube layer on a support, the first carbon nanotube layer includes a number of first carbon nanotubes; forming a semiconductor layer on a surface of the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, the second carbon nanotube layer includes a number of second carbon nanotubes; finding and labeling a first metal carbon nanotube and a semiconductor carbon nanotube parallel to and spaced away from the first metal carbon nanotube; finding and labeling a second metal carbon nanotube, an extending direction of the second metal carbon nanotube is crossed with an extending direction of the first metal carbon nanotube and the semiconductor carbon nanotube; removing the other carbon nanotubes; and annealing the above structure.
-
-
-
-
-
-
-
-
-
搜索结果
170 条记录 (耗时 0.025 秒)
