METHOD FOR MEASURING SECONDARY ELECTRON EMISSION COEFFICIENT

    公开(公告)号:US20210293730A1

    公开(公告)日:2021-09-23

    申请号:US16908982

    申请日:2020-06-23

    IPC分类号: G01N23/2251

    摘要: A method for measuring secondary electron emission coefficient comprising: providing a device including a first collecting plate and a second collecting plate, and measuring an injection current. Short-circuiting the first collecting plate and the second collecting plate; placing a sample and applying a 50 volt positive voltage between the sample and the first collecting plate, ISE is 0; measuring a current I1 between the sample and the first collecting plate, and ignoring IBG1; and according to formula I1=IBG1+Iothers+ISE, obtaining a current of other electrons. Applying a positive voltage between the first collecting plate and the sample; measuring a current I2 between the first collecting plate and the sample, and ignoring IBG2; and obtaining ISE formed by the secondary electrons according to formula I2=IBG2+Iothers+ISE. Obtaining the secondary electron emission coefficient according to formula δ = I SE I injection ⁢ ⁢ current .

    DEVICE FOR MEASURING SECONDARY ELECTRON EMISSION COEFFICIENT

    公开(公告)号:US20210293731A1

    公开(公告)日:2021-09-23

    申请号:US16908987

    申请日:2020-06-23

    IPC分类号: G01N23/2251

    摘要: A device for measuring a secondary electron emission coefficient comprises a scanning electron microscope, a first collecting plate, a second collecting plate, a first galvanometer, a second galvanometer, a voltmeter, and a Faraday cup. The scanning electron microscope comprises an electron emitter and a chamber. A sample is located between the first collecting plate and the second collecting plate. The first galvanometer is used to test a current intensity of electrons escaping from the sample and hitting the first collecting plate and the second collecting plate. A high-energy electron beam emitted by the electron emitter passes through the first collecting plate and the second collecting plate, and enters the Faraday cup. The second galvanometer is used to test a current intensity of electrons entering the Faraday cup.

    SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, PHOTODETECTOR AND SPECTROMETER

    公开(公告)号:US20200013972A1

    公开(公告)日:2020-01-09

    申请号:US16448086

    申请日:2019-06-21

    IPC分类号: H01L51/42 H01L51/00 H01L51/05

    摘要: The present invention relates to a semiconductor structure. The semiconductor structure comprises a semiconductor layer, at least one metallic carbon nanotube, and at least one graphene layer. The semiconductor layer defines a first surface and a second surface opposite to the first surface. The at least one metallic carbon nanotube is located on the first surface of the semiconductor layer. The at least one graphene layer is located on the second surface of the semiconductor layer. The at least one metallic carbon nanotube, the semiconductor layer and the at least one graphene layer are stacked with each other to form at least one three-layered stereoscopic structure. The present invention also relates a semiconductor device, and a photodetector.

    METHOD FOR OBTAINING METALLIC CARBON NANOTUBE

    公开(公告)号:US20210214226A1

    公开(公告)日:2021-07-15

    申请号:US16910378

    申请日:2020-06-24

    摘要: A method for obtaining metallic carbon nanotubes is provided. An insulating substrate comprising hollow portions and non-hollow portions is provided. A plurality of electrodes is formed on a surface of the non-hollow portions. A plurality of carbon nanotubes is formed on a surface of the insulating substrate, and the carbon nanotubes stretch across the hollow portions. The insulating substrate, the plurality of electrodes and the carbon nanotubes are placed into a cavity, and the cavity is evacuated. A voltage is applied between any two electrodes, and photos of carbon nanotubes suspended between the two electrodes are taken. In the photo, darker ones are semiconducting carbon nanotubes, and brighter ones are metallic carbon nanotubes. Finally, the semiconducting carbon nanotubes are removed.

    PHOTOCURRENT SCANNING SYSTEM
    8.
    发明申请

    公开(公告)号:US20190245484A1

    公开(公告)日:2019-08-08

    申请号:US16249308

    申请日:2019-01-16

    IPC分类号: H02S50/15 G01R13/34 G01R19/00

    摘要: A photocurrent scanning system comprises a laser generating device, a focusing device, a displacement adjustment device, a bias supply device, and a measuring device. The laser generating device is used to emit a laser. The focusing device is used to focus the laser to a surface of a sample. The displacement adjustment device is used to place the sample and adjust a position of the sample, to make the laser focused onto different parts of the surface of the sample. The bias supply device is used to supply a voltage to the sample. The measuring device is used to measure a photocurrent signal flowing through the sample.