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公开(公告)号：US20140084450A1
公开(公告)日：2014-03-27
申请号：US13627425
申请日：2012-09-26
申请人： Sandia Corporation
发明人： Gregory N. Nielson , Carlos Anthony Sanchez , Anna Tauke-Pedretti , Bongsang Kim , Jeffrey Cederberg , Murat Okandan , Jose Luis Cruz-Campa , Paul J. Resnick
CPC分类号： H01L25/50 , B81C1/00373 , B81C2201/0194 , H01L21/283 , H01L21/31111 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L21/6836 , H01L24/13 , H01L24/80 , H01L24/97 , H01L25/0657 , H01L2221/68327 , H01L2221/68354 , H01L2221/68368 , H01L2221/68381 , H01L2224/0401 , H01L2224/08145 , H01L2224/13005 , H01L2224/131 , H01L2224/14135 , H01L2224/80006 , H01L2224/80896 , H01L2224/9202 , H01L2224/97 , H01L2225/06517 , H01L2225/06568 , H01L2224/11 , H01L2224/80001 , H01L2924/00012 , H01L2924/014
摘要： A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.
摘要翻译： 一种方法包括在供体基底上形成释放层。 在剥离层上形成由第一半导体材料制成的多个器件。 在多个器件上形成第一介电层，使得多个器件的所有暴露表面被第一介电层覆盖。 所述多个装置化学地附接到由不同于第一半导体材料的第二半导体材料制成的接收装置，所述接收装置具有附接到与所述多个装置相对的所述接收装置的表面的接收基板。 蚀刻释放层以从多个装置释放施主衬底。 在多个装置和接收装置上施加第二介电层以将多个装置机械地附接到接收装置。
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公开(公告)号：US09508881B2
公开(公告)日：2016-11-29
申请号：US13649238
申请日：2012-10-11
申请人： Sandia Corporation
发明人： Anna Tauke-Pedretti , Jeffrey Cederberg , Gregory N. Nielson , Murat Okandan , Jose Luis Cruz-Campa
IPC分类号： H01L31/043 , H01L31/0687 , H01L31/0693 , H01L31/18
CPC分类号： H01L31/043 , H01L31/0687 , H01L31/0693 , H01L31/1844 , Y02E10/544
摘要： A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.
摘要翻译： 具有微系统的多结光伏（MEM-PV）电池包括具有第一结的第一光伏电池，第一光伏电池包括用于形成第一结的第一半导体材料，第一半导体材料具有第一带隙。 MEM-PV电池还包括包含第二结的第二光伏电池。 所述第二光伏电池包括用于形成所述第二结的第二半导体材料，所述第二半导体材料具有小于所述第一带隙的第二带隙，所述第二光伏电池还包括第一接触层，所述第一接触层设置在所述第一 光电池和第二光伏电池的第二接头，第一接触层由具有第三带隙的第三半导体材料组成，第三带隙大于或等于第一带隙。
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公开(公告)号：US08946052B2
公开(公告)日：2015-02-03
申请号：US13627425
申请日：2012-09-26
申请人： Sandia Corporation
发明人： Gregory N. Nielson , Carlos Anthony Sanchez , Anna Tauke-Pedretti , Bongsang Kim , Jeffrey Cederberg , Murat Okandan , Jose Luis Cruz-Campa , Paul J. Resnick
CPC分类号： H01L25/50 , B81C1/00373 , B81C2201/0194 , H01L21/283 , H01L21/31111 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L21/6836 , H01L24/13 , H01L24/80 , H01L24/97 , H01L25/0657 , H01L2221/68327 , H01L2221/68354 , H01L2221/68368 , H01L2221/68381 , H01L2224/0401 , H01L2224/08145 , H01L2224/13005 , H01L2224/131 , H01L2224/14135 , H01L2224/80006 , H01L2224/80896 , H01L2224/9202 , H01L2224/97 , H01L2225/06517 , H01L2225/06568 , H01L2224/11 , H01L2224/80001 , H01L2924/00012 , H01L2924/014
摘要： A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.
摘要翻译： 一种方法包括在供体基底上形成释放层。 在剥离层上形成由第一半导体材料制成的多个器件。 在多个器件上形成第一介电层，使得多个器件的所有暴露表面被第一介电层覆盖。 所述多个装置化学地附接到由不同于第一半导体材料的第二半导体材料制成的接收装置，所述接收装置具有附接到与所述多个装置相对的所述接收装置的表面的接收基板。 蚀刻释放层以从多个装置释放施主衬底。 在多个装置和接收装置上施加第二介电层以将多个装置机械地附接到接收装置。
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公开(公告)号：US20150221627A1
公开(公告)日：2015-08-06
申请号：US14576068
申请日：2013-09-25
申请人： Sandia Corporation
发明人： Gregory N. Nielson , Carlos Anthony Sanchez , Anna Tauke-Pedretti , Bonsang Kim , Jeffrey Cederberg , Murat Okandan , Jose Luis Cruz-Campa , Paul J. Resnick
IPC分类号： H01L25/00 , H01L21/283 , H01L21/311 , H01L25/065 , H01L21/683
CPC分类号： H01L25/50 , B81C1/00373 , B81C2201/0194 , H01L21/283 , H01L21/31111 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L21/6836 , H01L24/13 , H01L24/80 , H01L24/97 , H01L25/0657 , H01L2221/68327 , H01L2221/68354 , H01L2221/68368 , H01L2221/68381 , H01L2224/0401 , H01L2224/08145 , H01L2224/13005 , H01L2224/131 , H01L2224/14135 , H01L2224/80006 , H01L2224/80896 , H01L2224/9202 , H01L2224/97 , H01L2225/06517 , H01L2225/06568 , H01L2224/11 , H01L2224/80001 , H01L2924/00012 , H01L2924/014
摘要： An apparatus is disclosed that includes a first plurality of devices made of a group III-V semiconductor material and a second plurality of devices made of a semiconductor material different than the material of the first plurality of devices that are bonded to the first plurality of devices. The apparatus also includes a dielectric layer surrounding the first plurality of devices and the second plurality of devices to mechanically bond the first plurality of devices to the second plurality of devices.
摘要翻译： 公开了一种装置，其包括由III-V族半导体材料制成的第一多个器件和由与第一多个器件接合的第一多个器件的材料不同的半导体材料制成的第二多个器件 。 该装置还包括围绕第一多个装置的电介质层和第二多个装置，以将第一多个装置机械地结合到第二多个装置。
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公开(公告)号：US20140102520A1
公开(公告)日：2014-04-17
申请号：US13649238
申请日：2012-10-11
申请人： Sandia Corporation
发明人： Anna Tauke-Pedretti , Jeffrey Cederberg , Gregory N. Nielson , Murat Okandan , Jose Luis Cruz-Campa
CPC分类号： H01L31/043 , H01L31/0687 , H01L31/0693 , H01L31/1844 , Y02E10/544
摘要： A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.
摘要翻译： 具有微系统的多结光伏（MEM-PV）电池包括具有第一结的第一光伏电池，第一光伏电池包括用于形成第一结的第一半导体材料，第一半导体材料具有第一带隙。 MEM-PV电池还包括包含第二结的第二光伏电池。 所述第二光伏电池包括用于形成所述第二结的第二半导体材料，所述第二半导体材料具有小于所述第一带隙的第二带隙，所述第二光伏电池还包括第一接触层，所述第一接触层设置在所述第一 光电池和第二光伏电池的第二接头，第一接触层由具有第三带隙的第三半导体材料组成，第三带隙大于或等于第一带隙。
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