- 专利标题： Forming Semiconductor Structure with Device Layers and TRL
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申请号： US15386014申请日： 2016-12-21
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公开(公告)号： US20170101309A1公开(公告)日： 2017-04-13
- 发明人: Michael A. Stuber
- 申请人： QUALCOMM INCORPORATED
- 主分类号： B81C1/00
- IPC分类号： B81C1/00 ; B81B3/00
摘要：
A semiconductor wafer is formed with a first device layer having active devices. A handle wafer having a trap rich layer is bonded to a top surface of the semiconductor wafer. A second device layer having a MEMS device or acoustic filter device is formed on a bottom surface of the semiconductor wafer. The second device layer is formed either by monolithic fabrication processes or layer-transfer processes.
公开/授权文献
- US09783414B2 Forming semiconductor structure with device layers and TRL 公开/授权日：2017-10-10
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