公开(公告)号：US12037685B2

公开(公告)日：2024-07-16

申请号：US17411545

申请日：2021-08-25

申请人： SILCOTEK CORP.

发明人： Gary A. Barone

IPC分类号： C23C16/24 ,  C23C16/455 ,  C23C16/04

CPC分类号： C23C16/45523 ,  C23C16/24 ,  C23C16/045

摘要： Liquid chromatography systems and liquid chromatography components are disclosed. In an embodiment, a liquid chromatography system includes a liquid chromatography component. The liquid chromatography component includes a substrate and an amorphous coating on the substrate. The amorphous coating has a base layer and a surface layer. The base layer includes carboxysilane.

公开(公告)号：US12024635B2

公开(公告)日：2024-07-02

申请号：US17710087

申请日：2022-03-31

申请人： Luxembourg Institute of Science and Technology (LIST)

发明人： Naoufal Bahlawane

IPC分类号： C09D1/00 ,  C01B32/16 ,  C01B32/162 ,  C01B32/168 ,  C09D7/40 ,  C09D7/62 ,  C23C16/26 ,  C23C16/40 ,  C23C16/448 ,  C23C16/455 ,  B82Y30/00 ,  B82Y40/00

CPC分类号： C09D1/00 ,  C01B32/16 ,  C01B32/162 ,  C01B32/168 ,  C09D7/62 ,  C09D7/70 ,  C23C16/26 ,  C23C16/403 ,  C23C16/4486 ,  C23C16/45523 ,  B82Y30/00 ,  B82Y40/00 ,  C01B2202/36 ,  Y10S977/745 ,  Y10S977/843 ,  Y10S977/847

摘要： A first aspect of the invention relates to a carbon-nanotube-based composite coating, comprising a layer of carbon nanotubes (CNTs) that comprise metal oxide claddings sheathing them. Another aspect of the invention relates to a method for producing such CNT-based composite coatings using chemical vapour deposition (CVD).

公开(公告)号：US11993842B2

公开(公告)日：2024-05-28

申请号：US18072392

申请日：2022-11-30

申请人： Applied Materials, Inc. ,  The Regents of the University of California

发明人： Keith Tatseun Wong ,  Srinivas D. Nemani ,  Andrew C. Kummel ,  James Huang ,  Yunil Cho

IPC分类号： C23C16/455 ,  C23C16/40 ,  C23C28/04

CPC分类号： C23C16/405 ,  C23C16/45523 ,  C23C28/04

摘要： Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

公开(公告)号：US20240117495A1

公开(公告)日：2024-04-11

申请号：US17768249

申请日：2020-10-13

申请人： SILCOTEK CORP.

发明人： Geoffrey K. WHITE ,  Nicholas P. DESKEVICH ,  James B. MATTZELA ,  Gary A. BARONE ,  David A. SMITH ,  Pierre A. LECLAIR ,  Min YUAN ,  Jesse BISCHOF

IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46

CPC分类号： C23C16/52 ,  C23C16/4404 ,  C23C16/45523 ,  C23C16/46

摘要： Cold thermal chemical vapor deposition coatings, articles, and processes are disclosed. Specifically, a cold thermal chemical vapor deposition process includes positioning an article, heating a precursor gas to at least a decomposition temperature of the precursor gas to produce a deposition gas, introducing the deposition gas to a coating vessel, and depositing a coating from the deposition gas onto the article within the coating vessel. The article remains at a temperature below the decomposition temperature throughout the introducing and depositing of the deposition gas. The coating on the article has a gradient formed by the depositing of the coating having no flow for a period of time. The coated article includes a thermally-sensitive substrate (the thermally-sensitive substrate capable of being modified by a temperature of 300 degrees Celsius) and a coating the thermally-sensitive substrate.

公开(公告)号：US20230416907A1

公开(公告)日：2023-12-28

申请号：US18037365

申请日：2020-11-30

申请人： WACKER CHEMIE AG

发明人： Michael FRICKE ,  Moritz BECKER ,  Claudia KLEINLEIN ,  Jürgen PFEIFFER ,  Sebastian SUCKOW

IPC分类号： C23C16/24 ,  C23C16/442 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  H01M4/36 ,  H01M4/38 ,  H01M4/587 ,  C01B33/02 ,  C01B33/04

CPC分类号： C23C16/24 ,  C23C16/442 ,  C23C16/045 ,  C23C16/4417 ,  C23C16/45523 ,  H01M4/366 ,  H01M4/386 ,  H01M4/587 ,  C01B33/02 ,  C01B33/043 ,  H01M2004/027

摘要： Silicon-containing materials along with process for producing and uses for the same. The process includes reacting the silicon-containing materials in a fluidized bed reactor by deposition of silicon from at least one silicon precursor in pores and on the surface of porous particles. A fluidizing gas stream is provided within the fluidized bed reactor that is fully or partly induced to oscillate in a pulsed manner and propagates in the form of a wave and acts on the fluidized bed so as to form a homogeneously fluidized bed as a pulsed gas stream so as to form a homogeneously fluidized bed having a fluidization index FI of at least 0.95. Where the fluidizing gas stream has a superficial velocity which is above a measured minimum fluidization velocity of the pulsed gas stream and where the pulsation is combined with mechanical stirring as a further fluidizing aid.

公开(公告)号：US11746420B2

公开(公告)日：2023-09-05

申请号：US16235593

申请日：2018-12-28

申请人： Novellus Systems, Inc.

发明人： Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox

IPC分类号： C23C16/50 ,  H01J37/32 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02 ,  H01L21/67 ,  C23C16/52

CPC分类号： C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32137 ,  H01J37/32155 ,  H01L21/022 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

摘要： An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, an apparatus configured to deposit a plurality of film layers having different compositions on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a process station reactant feed fluidically coupled to a gas inlet of the process station, and fluidically coupled to an inert gas delivery line, a first reactant mixture gas delivery line and a second reactant mixture gas delivery line such that the first reactant gas mixture and the second reactant gas mixture can be introduced sequentially into the process station reactant feed, and supplied via a shared path to the process station.

公开(公告)号：US20230260784A1

公开(公告)日：2023-08-17

申请号：US18140926

申请日：2023-04-28

申请人： ASM IP Holding B.V.

发明人： Tom Blomberg ,  Chiyu Zhu

IPC分类号： H01L21/02 ,  H01L21/28 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/02565 ,  H01L21/0262 ,  H01L21/0257 ,  H01L21/28194 ,  H01L21/0228 ,  C23C16/407 ,  C23C16/45527 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02592

摘要： Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.

公开(公告)号：US20230193458A1

公开(公告)日：2023-06-22

申请号：US17927106

申请日：2021-05-06

申请人： TAIYO NIPPON SANSO CORPORATION

发明人： Hayato MURATA ,  Tadaki MIZUNO ,  Keisuke ANDACHI ,  Katsumasa SUZUKI

IPC分类号： C23C16/30 ,  C23C16/455 ,  C23C16/52

CPC分类号： C23C16/303 ,  C23C16/45512 ,  C23C16/52 ,  C23C16/45523

摘要： One object of the present invention is to provide a method for producing a metal nitride film that has a high film formation rate and excellent productivity. The present invention provides a method for producing a metal nitride film in which a metal nitride film is formed on at least a part of a surface of a substrate to be processed by chemical vapor deposition using a metal compound raw material and a nitrogen-containing compound raw material, wherein the nitrogen-containing compound raw material contains hydrazine and ammonia.

公开(公告)号：US20190185996A1

公开(公告)日：2019-06-20

申请号：US16269337

申请日：2019-02-06

申请人： Applied Materials, Inc.

发明人： Praket P. JHA ,  Allen KO ,  Xinhai HAN ,  Thomas Jongwan KWON ,  Bok Hoen KIM ,  Byung Ho KIL ,  Ryeun KIM ,  Sang Hyuk KIM

IPC分类号： C23C16/34 ,  H01L21/02 ,  H01L21/311 ,  C23C16/455 ,  C23C16/40

CPC分类号： C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31116 ,  H01L27/11556 ,  H01L27/11582

摘要： The present disclosure generally relate to thin films incorporating high aspect ratio feature definitions and methods for forming the same. As gate height increases, 3D NAND gate stacks are subject to higher aspect ratio etching. Due to the current limitations of etching techniques, the vertical etch profile typically tapers as the depth into the gate stack increases. The inventors have devised a unique deposition scheme that compensates for etch performance degradation in deep trenches by a novel plasma-enhanced chemical vapor deposition (PECVD) film deposition method. The inventors have found that by grading various properties (e.g., refractive index, stress of the film, dopant concentration in the film) of the as-deposited films (e.g., silicon nitride) a more uniform etch profile can be achieved by compensating for variations in both dry and wet etch rates.

公开(公告)号：US20180203347A1

公开(公告)日：2018-07-19

申请号：US15917939

申请日：2018-03-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsun-Chuan SHIH ,  Sheng-Chi CHIN ,  Yuan-Chih CHU ,  Yueh-Hsun LI

IPC分类号： G03F1/72 ,  G03F1/26 ,  G03F1/22 ,  H01L21/02 ,  G03F1/74 ,  H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  G03F1/82 ,  H01L21/321

CPC分类号： G03F1/72 ,  C23C16/047 ,  C23C16/45523 ,  G03F1/22 ,  G03F1/26 ,  G03F1/74 ,  G03F1/82 ,  H01L21/02277 ,  H01L21/02334 ,  H01L21/02337 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/28556 ,  H01L21/321

摘要： A method includes loading a mask having a defect into a chamber. The defect of the mask is repaired by forming a repair feature in a repair region of the mask. The forming the repair feature includes irradiating the repair region of the mask with a radiation beam. The forming the repair feature further includes while irradiating the repair region, injecting a precursor gas into the chamber to form a first film of the repair feature on the repair region, and while irradiating the repair region, injecting a cleaning gas into the chamber. The cleaning gas reacts with an impurity material in the first film to transform the first film into a first cleaned film.