公开(公告)号：US20180203347A1

公开(公告)日：2018-07-19

申请号：US15917939

申请日：2018-03-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsun-Chuan SHIH ,  Sheng-Chi CHIN ,  Yuan-Chih CHU ,  Yueh-Hsun LI

IPC分类号： G03F1/72 ,  G03F1/26 ,  G03F1/22 ,  H01L21/02 ,  G03F1/74 ,  H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  G03F1/82 ,  H01L21/321

CPC分类号： G03F1/72 ,  C23C16/047 ,  C23C16/45523 ,  G03F1/22 ,  G03F1/26 ,  G03F1/74 ,  G03F1/82 ,  H01L21/02277 ,  H01L21/02334 ,  H01L21/02337 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/28556 ,  H01L21/321

摘要： A method includes loading a mask having a defect into a chamber. The defect of the mask is repaired by forming a repair feature in a repair region of the mask. The forming the repair feature includes irradiating the repair region of the mask with a radiation beam. The forming the repair feature further includes while irradiating the repair region, injecting a precursor gas into the chamber to form a first film of the repair feature on the repair region, and while irradiating the repair region, injecting a cleaning gas into the chamber. The cleaning gas reacts with an impurity material in the first film to transform the first film into a first cleaned film.