公开(公告)号：US20180203347A1

公开(公告)日：2018-07-19

申请号：US15917939

申请日：2018-03-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsun-Chuan SHIH ,  Sheng-Chi CHIN ,  Yuan-Chih CHU ,  Yueh-Hsun LI

IPC分类号： G03F1/72 ,  G03F1/26 ,  G03F1/22 ,  H01L21/02 ,  G03F1/74 ,  H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  G03F1/82 ,  H01L21/321

CPC分类号： G03F1/72 ,  C23C16/047 ,  C23C16/45523 ,  G03F1/22 ,  G03F1/26 ,  G03F1/74 ,  G03F1/82 ,  H01L21/02277 ,  H01L21/02334 ,  H01L21/02337 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/28556 ,  H01L21/321

摘要： A method includes loading a mask having a defect into a chamber. The defect of the mask is repaired by forming a repair feature in a repair region of the mask. The forming the repair feature includes irradiating the repair region of the mask with a radiation beam. The forming the repair feature further includes while irradiating the repair region, injecting a precursor gas into the chamber to form a first film of the repair feature on the repair region, and while irradiating the repair region, injecting a cleaning gas into the chamber. The cleaning gas reacts with an impurity material in the first film to transform the first film into a first cleaned film.

公开(公告)号：US20160223897A1

公开(公告)日：2016-08-04

申请号：US14819835

申请日：2015-08-06

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yuan-Chih CHU

IPC分类号： G03F1/24

CPC分类号： G03F1/24

摘要： Any defects in the reflective coating or absorber layer of an EUV mask are problematic in transferring a pattern of the EUV mask to a wafer since they produce errors in integrated circuit patterns on the wafer. In this regard, a method of manufacturing an EUV mask is provided according to various embodiments of the present disclosure. According to the method of the present disclosure, the defects in the EUV mask can be detected and repaired with an defect-free multilayer body. A substantially defect-free EUV mask can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.

摘要翻译： EUV掩模的反射涂层或吸收层中的任何缺陷在将EUV掩模的图案转印到晶片上是有问题的，因为它们在晶片上的集成电路图案中产生误差。 在这方面，根据本公开的各种实施例提供了制造EUV掩模的方法。 根据本公开的方法，可以用无缺陷的多层体检测和修复EUV掩模中的缺陷。 因此，可以以成本效益的方式制造基本上无缺陷的EUV掩模，以克服上述缺点。