公开(公告)号：US08895415B1

公开(公告)日：2014-11-25

申请号：US13907742

申请日：2013-05-31

申请人： Novellus Systems, Inc.

发明人： Keith Fox ,  Dong Niu ,  Joseph L. Womack

IPC分类号： H01L21/205 ,  H01L21/02

CPC分类号： H01L21/02694 ,  H01L21/02123 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02507 ,  H01L21/02532 ,  H01L27/11582

摘要： The method and apparatus disclosed herein relate to preparing a stack structure for an electronic device on a semiconductor substrate. A particularly beneficial application of the method is in reduction of internal stress in a stack containing multiple layers of silicon. Typically, though not necessarily, the internal stress is a compressive stress, which often manifests as wafer bow. In some embodiments, the method reduces the internal stress of a work piece by depositing phosphorus doped silicon layers having low internal compressive stress or even tensile stress. The method and apparatus disclosed herein can be used to reduce compressive bow in stacks containing silicon.

摘要翻译： 本文公开的方法和装置涉及制备半导体衬底上的电子器件的堆叠结构。 该方法的特别有益的应用是减少包含多层硅的堆叠中的内部应力。 通常，尽管不一定，内部应力是压缩应力，其通常表现为晶片弓。 在一些实施例中，该方法通过沉积具有低内部压缩应力或甚至拉伸应力的磷掺杂硅层来降低工件的内部应力。 本文公开的方法和装置可以用于减少包含硅的堆叠中的压缩弓。

公开(公告)号：US09165788B2

公开(公告)日：2015-10-20

申请号：US13857566

申请日：2013-04-05

申请人： Novellus Systems, Inc.

发明人： Keith Fox ,  Bart J. Van Schravendijk ,  Dong Niu ,  Lucas B. Henderson ,  Joseph L. Womack

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/324 ,  H01L27/115 ,  C23C16/24 ,  C23C16/56

CPC分类号： H01L21/324 ,  C23C16/24 ,  C23C16/56 ,  H01L27/11582

摘要： The methods and apparatus disclosed herein concern a process that may be referred to as a “soft anneal.” A soft anneal provides various benefits. Fundamentally, it reduces the internal stress in one or more silicon layers of a work piece. Typically, though not necessarily, the internal stress is a compressive stress. A particularly beneficial application of a soft anneal is in reduction of internal stress in a stack containing two or more layers of silicon. Often, the internal stress of a layer or group of layers in a stack is manifest as wafer bow. The soft anneal process can be used to reduce compressive bow in stacks containing silicon. The soft anneal process may be performed without causing the silicon in the stack to become activated.

摘要翻译： 本文公开的方法和装置涉及可被称为“软退火”的方法。软退火提供了各种益处。 从根本上说，它降低了工件的一个或多个硅层的内应力。 通常，尽管不一定，内应力是压应力。 软退火的特别有益的应用是在包含两层或更多层硅的堆叠中减少内部应力。 通常，堆叠中的一层或多层层的内应力显示为晶片弓。 软退火工艺可用于减少含硅堆叠中的压缩弓。 可以执行软退火工艺，而不会使堆叠中的硅变得活化。

公开(公告)号：US09028924B2

公开(公告)日：2015-05-12

申请号：US13671424

申请日：2012-11-07

申请人： Novellus Systems, Inc.

发明人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

IPC分类号： H05H1/24 ,  H01L21/02 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/54

CPC分类号： H01L21/0234 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274

摘要： Methods of forming a film stack may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Process station apparatuses for forming a film stack of silicon nitride and silicon oxide films may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.

摘要翻译： 形成薄膜叠层的方法可以包括由含氮前体与含硅前体的反应形成的氮化硅薄膜的等离子体加速沉积，等离子体加速从处理室中大量消除含硅前体，等离子体加速沉积 在由含硅前体与氧化剂的反应形成的氮化硅膜顶上的氧化硅膜，等离子体加速了处理室中氧化剂的显着消除。 用于形成氮化硅和氧化硅膜的膜堆的处理站装置可以包括处理室，一个或多个气体输送管线，一个或多个RF发生器和具有机器可读介质的系统控制器，所述机器可读介质具有用于操作所述一个或多个 更多的气体输送管线和一个或多个RF发生器。

公开(公告)号：US20230366094A1

公开(公告)日：2023-11-16

申请号：US18351681

申请日：2023-07-13

申请人： Novellus Systems, Inc.

发明人： Jason Dirk Haverkamp ,  Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox ,  John B. Alexy ,  Patrick G. Breiling ,  Jennifer L. Petraglia ,  Mandyam A. Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk

IPC分类号： C23C16/50 ,  H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/52 ,  C23C16/509 ,  H01L21/67 ,  H01L21/02 ,  C23C16/24 ,  C23C16/54

CPC分类号： C23C16/50 ,  H01J37/32137 ,  C23C16/45565 ,  H01J37/32155 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45574 ,  C23C16/52 ,  C23C16/509 ,  H01L21/67207 ,  C23C16/45523 ,  H01L21/02164 ,  H01L21/67201 ,  C23C16/24 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/02123 ,  H01L21/022 ,  C23C16/45512 ,  H01L21/02274

摘要： An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

公开(公告)号：US20150013607A1

公开(公告)日：2015-01-15

申请号：US14262196

申请日：2014-04-25

申请人： Novellus Systems, Inc.

发明人： Jason Dirk Haverkamp ,  Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox ,  John B. Alexy ,  Patrick G. Breiling ,  Jennifer L. Petraglia ,  Mandyam A. Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk

IPC分类号： C23C16/50 ,  C23C16/455 ,  C23C16/52

CPC分类号： C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32137 ,  H01J37/32155 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

摘要： An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

摘要翻译： 描述了一种用于原位沉积薄膜叠层（即没有真空断裂或空气曝光）的设备。 在一个示例中，提供了一种等离子体增强化学气相沉积设备，其被配置为在基板上沉积多个膜层而不将基板暴露于膜沉积阶段之间的真空断裂。 该装置包括处理室，等离子体源和被配置为在特定沉积阶段期间使用特定反应气体混合物来控制等离子体源以产生反应物自由基的控制器，并且在从期间提供的特定反应气体混合物的转变期间维持等离子体 在不同沉积阶段期间提供的不同反应气体混合物的特定沉积阶段。

公开(公告)号：US11746420B2

公开(公告)日：2023-09-05

申请号：US16235593

申请日：2018-12-28

申请人： Novellus Systems, Inc.

发明人： Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox

IPC分类号： C23C16/50 ,  H01J37/32 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02 ,  H01L21/67 ,  C23C16/52

CPC分类号： C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32137 ,  H01J37/32155 ,  H01L21/022 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

摘要： An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, an apparatus configured to deposit a plurality of film layers having different compositions on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a process station reactant feed fluidically coupled to a gas inlet of the process station, and fluidically coupled to an inert gas delivery line, a first reactant mixture gas delivery line and a second reactant mixture gas delivery line such that the first reactant gas mixture and the second reactant gas mixture can be introduced sequentially into the process station reactant feed, and supplied via a shared path to the process station.

公开(公告)号：US10214816B2

公开(公告)日：2019-02-26

申请号：US14262196

申请日：2014-04-25

申请人： Novellus Systems, Inc.

发明人： Jason Dirk Haverkamp ,  Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox ,  John B. Alexy ,  Patrick G. Breiling ,  Jennifer L. Petraglia ,  Mandyam A. Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk

IPC分类号： C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

摘要： An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

公开(公告)号：US20140357064A1

公开(公告)日：2014-12-04

申请号：US13907742

申请日：2013-05-31

申请人： Novellus Systems, Inc.

发明人： Keith Fox ,  Dong Niu ,  Joseph L. Womack

IPC分类号： H01L21/02

CPC分类号： H01L21/02694 ,  H01L21/02123 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02507 ,  H01L21/02532 ,  H01L27/11582

摘要： The method and apparatus disclosed herein relate to preparing a stack structure for an electronic device on a semiconductor substrate. A particularly beneficial application of the method is in reduction of internal stress in a stack containing multiple layers of silicon. Typically, though not necessarily, the internal stress is a compressive stress, which often manifests as wafer bow. In some embodiments, the method reduces the internal stress of a work piece by depositing phosphorus doped silicon layers having low internal compressive stress or even tensile stress. The method and apparatus disclosed herein can be used to reduce compressive bow in stacks containing silicon.

摘要翻译： 本文公开的方法和装置涉及制备半导体衬底上的电子器件的堆叠结构。 该方法的特别有益的应用是减少包含多层硅的堆叠中的内部应力。 通常，尽管不一定，内部应力是压缩应力，其通常表现为晶片弓。 在一些实施例中，该方法通过沉积具有低内部压缩应力或甚至拉伸应力的磷掺杂硅层来降低工件的内部应力。 本文公开的方法和装置可以用于减少包含硅的堆叠中的压缩弓。