公开(公告)号：US09388491B2

公开(公告)日：2016-07-12

申请号：US13946012

申请日：2013-07-19

申请人： Novellus Systems, Inc.

发明人： Keith Fox

IPC分类号： C23C16/34 ,  C23C16/38 ,  C23C16/32 ,  C23C16/455

CPC分类号： C23C16/38 ,  C23C16/32 ,  C23C16/345 ,  C23C16/45523

摘要： A method for depositing a film in a substrate processing system includes arranging a substrate on a pedestal in a processing chamber, heating the substrate to a temperature within a predetermined temperature range, and supplying a gas mixture to the processing chamber for a predetermined period to deposit the film on the substrate, wherein the gas mixture includes a first precursor gas, ammonia gas and diborane gas.

摘要翻译： 一种在基板处理系统中沉积膜的方法，包括将基板布置在处理室中的基座上，将基板加热到预定温度范围内的温度，并将气体混合物供给处理室一段预定时间以沉积 所述衬底上的膜，其中所述气体混合物包括第一前体气体，氨气和乙硼烷气体。

公开(公告)号：US08895415B1

公开(公告)日：2014-11-25

申请号：US13907742

申请日：2013-05-31

申请人： Novellus Systems, Inc.

发明人： Keith Fox ,  Dong Niu ,  Joseph L. Womack

IPC分类号： H01L21/205 ,  H01L21/02

CPC分类号： H01L21/02694 ,  H01L21/02123 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02507 ,  H01L21/02532 ,  H01L27/11582

摘要： The method and apparatus disclosed herein relate to preparing a stack structure for an electronic device on a semiconductor substrate. A particularly beneficial application of the method is in reduction of internal stress in a stack containing multiple layers of silicon. Typically, though not necessarily, the internal stress is a compressive stress, which often manifests as wafer bow. In some embodiments, the method reduces the internal stress of a work piece by depositing phosphorus doped silicon layers having low internal compressive stress or even tensile stress. The method and apparatus disclosed herein can be used to reduce compressive bow in stacks containing silicon.

摘要翻译： 本文公开的方法和装置涉及制备半导体衬底上的电子器件的堆叠结构。 该方法的特别有益的应用是减少包含多层硅的堆叠中的内部应力。 通常，尽管不一定，内部应力是压缩应力，其通常表现为晶片弓。 在一些实施例中，该方法通过沉积具有低内部压缩应力或甚至拉伸应力的磷掺杂硅层来降低工件的内部应力。 本文公开的方法和装置可以用于减少包含硅的堆叠中的压缩弓。

公开(公告)号：US20140023784A1

公开(公告)日：2014-01-23

申请号：US13946012

申请日：2013-07-19

申请人： Novellus Systems, Inc.

发明人： Keith Fox

IPC分类号： C23C16/38

CPC分类号： C23C16/38 ,  C23C16/32 ,  C23C16/345 ,  C23C16/45523

摘要： A method for depositing a film in a substrate processing system includes arranging a substrate on a pedestal in a processing chamber, heating the substrate to a temperature within a predetermined temperature range, and supplying a gas mixture to the processing chamber for a predetermined period to deposit the film on the substrate, wherein the gas mixture includes a first precursor gas, ammonia gas and diborane gas.

摘要翻译： 一种在基板处理系统中沉积膜的方法，包括将基板布置在处理室中的基座上，将基板加热到预定温度范围内的温度，并将气体混合物供给处理室一段预定时间以沉积 所述衬底上的膜，其中所述气体混合物包括第一前体气体，氨气和乙硼烷气体。

公开(公告)号：US20230366094A1

公开(公告)日：2023-11-16

申请号：US18351681

申请日：2023-07-13

申请人： Novellus Systems, Inc.

发明人： Jason Dirk Haverkamp ,  Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox ,  John B. Alexy ,  Patrick G. Breiling ,  Jennifer L. Petraglia ,  Mandyam A. Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk

IPC分类号： C23C16/50 ,  H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/52 ,  C23C16/509 ,  H01L21/67 ,  H01L21/02 ,  C23C16/24 ,  C23C16/54

CPC分类号： C23C16/50 ,  H01J37/32137 ,  C23C16/45565 ,  H01J37/32155 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45574 ,  C23C16/52 ,  C23C16/509 ,  H01L21/67207 ,  C23C16/45523 ,  H01L21/02164 ,  H01L21/67201 ,  C23C16/24 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/02123 ,  H01L21/022 ,  C23C16/45512 ,  H01L21/02274

摘要： An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

公开(公告)号：US20150013607A1

公开(公告)日：2015-01-15

申请号：US14262196

申请日：2014-04-25

申请人： Novellus Systems, Inc.

发明人： Jason Dirk Haverkamp ,  Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox ,  John B. Alexy ,  Patrick G. Breiling ,  Jennifer L. Petraglia ,  Mandyam A. Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk

IPC分类号： C23C16/50 ,  C23C16/455 ,  C23C16/52

CPC分类号： C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32137 ,  H01J37/32155 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

摘要： An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

摘要翻译： 描述了一种用于原位沉积薄膜叠层（即没有真空断裂或空气曝光）的设备。 在一个示例中，提供了一种等离子体增强化学气相沉积设备，其被配置为在基板上沉积多个膜层而不将基板暴露于膜沉积阶段之间的真空断裂。 该装置包括处理室，等离子体源和被配置为在特定沉积阶段期间使用特定反应气体混合物来控制等离子体源以产生反应物自由基的控制器，并且在从期间提供的特定反应气体混合物的转变期间维持等离子体 在不同沉积阶段期间提供的不同反应气体混合物的特定沉积阶段。

公开(公告)号：US11746420B2

公开(公告)日：2023-09-05

申请号：US16235593

申请日：2018-12-28

申请人： Novellus Systems, Inc.

发明人： Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox

IPC分类号： C23C16/50 ,  H01J37/32 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02 ,  H01L21/67 ,  C23C16/52

CPC分类号： C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32137 ,  H01J37/32155 ,  H01L21/022 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

摘要： An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, an apparatus configured to deposit a plurality of film layers having different compositions on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a process station reactant feed fluidically coupled to a gas inlet of the process station, and fluidically coupled to an inert gas delivery line, a first reactant mixture gas delivery line and a second reactant mixture gas delivery line such that the first reactant gas mixture and the second reactant gas mixture can be introduced sequentially into the process station reactant feed, and supplied via a shared path to the process station.

公开(公告)号：US10214816B2

公开(公告)日：2019-02-26

申请号：US14262196

申请日：2014-04-25

申请人： Novellus Systems, Inc.

发明人： Jason Dirk Haverkamp ,  Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox ,  John B. Alexy ,  Patrick G. Breiling ,  Jennifer L. Petraglia ,  Mandyam A. Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk

IPC分类号： C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

摘要： An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

公开(公告)号：US20140357064A1

公开(公告)日：2014-12-04

申请号：US13907742

申请日：2013-05-31

申请人： Novellus Systems, Inc.

发明人： Keith Fox ,  Dong Niu ,  Joseph L. Womack

IPC分类号： H01L21/02

CPC分类号： H01L21/02694 ,  H01L21/02123 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02507 ,  H01L21/02532 ,  H01L27/11582

摘要： The method and apparatus disclosed herein relate to preparing a stack structure for an electronic device on a semiconductor substrate. A particularly beneficial application of the method is in reduction of internal stress in a stack containing multiple layers of silicon. Typically, though not necessarily, the internal stress is a compressive stress, which often manifests as wafer bow. In some embodiments, the method reduces the internal stress of a work piece by depositing phosphorus doped silicon layers having low internal compressive stress or even tensile stress. The method and apparatus disclosed herein can be used to reduce compressive bow in stacks containing silicon.

摘要翻译： 本文公开的方法和装置涉及制备半导体衬底上的电子器件的堆叠结构。 该方法的特别有益的应用是减少包含多层硅的堆叠中的内部应力。 通常，尽管不一定，内部应力是压缩应力，其通常表现为晶片弓。 在一些实施例中，该方法通过沉积具有低内部压缩应力或甚至拉伸应力的磷掺杂硅层来降低工件的内部应力。 本文公开的方法和装置可以用于减少包含硅的堆叠中的压缩弓。

公开(公告)号：US09028924B2

公开(公告)日：2015-05-12

申请号：US13671424

申请日：2012-11-07

申请人： Novellus Systems, Inc.

发明人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

IPC分类号： H05H1/24 ,  H01L21/02 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/54

CPC分类号： H01L21/0234 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274

摘要： Methods of forming a film stack may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Process station apparatuses for forming a film stack of silicon nitride and silicon oxide films may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.

摘要翻译： 形成薄膜叠层的方法可以包括由含氮前体与含硅前体的反应形成的氮化硅薄膜的等离子体加速沉积，等离子体加速从处理室中大量消除含硅前体，等离子体加速沉积 在由含硅前体与氧化剂的反应形成的氮化硅膜顶上的氧化硅膜，等离子体加速了处理室中氧化剂的显着消除。 用于形成氮化硅和氧化硅膜的膜堆的处理站装置可以包括处理室，一个或多个气体输送管线，一个或多个RF发生器和具有机器可读介质的系统控制器，所述机器可读介质具有用于操作所述一个或多个 更多的气体输送管线和一个或多个RF发生器。

公开(公告)号：US20150325435A1

公开(公告)日：2015-11-12

申请号：US14802766

申请日：2015-07-17

申请人： Novellus Systems, Inc.

发明人： Alice G. Hollister ,  Sirish K. Reddy ,  Keith Fox ,  Mandyam Sriram ,  Joseph L. Womack

IPC分类号： H01L21/02 ,  H01L21/033 ,  H01L27/115

CPC分类号： H01L21/0245 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11556 ,  H01L27/11582

摘要： Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 Å, such as less than about 5 Å as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD），使用包含含硅前体（例如硅烷），氩气和第二气体如氦气的工艺气体沉积具有低压缩应力和平滑拉伸硅膜的平滑硅膜， 氢或氦和氢的组合。 通过向工艺气体中加入掺杂剂源或含锗前体源可以获得掺杂的平滑硅膜和平滑硅锗膜。 在一些实施例中，在沉积期间使用包括高频（HF）和低频（LF）分量的双频等离子体等离子体，导致改善的膜粗糙度。 膜的特征在于通过原子力显微镜（AFM）测量的小于约等于小于约5埃的粗糙度（Ra）和绝对值小于约500MPa的压缩应力。 在一些实施方案中，获得平滑的拉伸硅膜。