公开(公告)号：US20230193458A1

公开(公告)日：2023-06-22

申请号：US17927106

申请日：2021-05-06

申请人： TAIYO NIPPON SANSO CORPORATION

发明人： Hayato MURATA ,  Tadaki MIZUNO ,  Keisuke ANDACHI ,  Katsumasa SUZUKI

IPC分类号： C23C16/30 ,  C23C16/455 ,  C23C16/52

CPC分类号： C23C16/303 ,  C23C16/45512 ,  C23C16/52 ,  C23C16/45523

摘要： One object of the present invention is to provide a method for producing a metal nitride film that has a high film formation rate and excellent productivity. The present invention provides a method for producing a metal nitride film in which a metal nitride film is formed on at least a part of a surface of a substrate to be processed by chemical vapor deposition using a metal compound raw material and a nitrogen-containing compound raw material, wherein the nitrogen-containing compound raw material contains hydrazine and ammonia.