Liquid chromatography system and component

    公开(公告)号:US11131020B2

    公开(公告)日:2021-09-28

    申请号:US16870034

    申请日:2020-05-08

    申请人: SILCOTEK CORP.

    发明人: Gary A. Barone

    摘要: Liquid chromatography systems and liquid chromatography components are disclosed. In an embodiment, a liquid chromatography system includes a liquid chromatography component. The liquid chromatography component includes a substrate and an amorphous coating on the substrate. The amorphous coating has a base layer and a surface layer. The base layer includes carboxysilane.

    Coated article
    3.
    发明授权

    公开(公告)号:US10731247B2

    公开(公告)日:2020-08-04

    申请号:US15683399

    申请日:2017-08-22

    申请人: SILCOTEK CORP.

    摘要: The present invention relates to a coated article. The coated article includes a first layer, a second layer, and a diffusion region between the first layer and the second layer. The first layer has a first atomic concentration of C, a first atomic concentration of Si, and a first atomic concentration of O. The second layer has a first atomic concentration of Fe, a first atomic concentration of Cr, and a first atomic concentration of Ni. The diffusion region has a second atomic concentration of the C, a second atomic concentration of the Si, a second atomic concentration of the O, a second atomic concentration of the Fe, a second atomic concentration of the Cr, and a second atomic concentration of the Ni. All of the atomic concentrations are based upon Auger Electron Spectroscopy.

    Chemical vapor deposition process and coated article

    公开(公告)号:US11261524B2

    公开(公告)日:2022-03-01

    申请号:US16379236

    申请日:2019-04-09

    申请人: SILCOTEK CORP.

    IPC分类号: C23C16/44 B32B15/00 H01L21/02

    摘要: Chemical vapor deposition processes and coated articles are disclosed. The process includes a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time, a first decomposing of the first amount of the silane during at least a portion of the first period of time, a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time, and a second decomposing of the second amount of the silane during at least a portion of the second period of time. The process is devoid of inert gas purging between the first decomposing and the second introducing and/or produces a chemical vapor deposition coating devoid of hydrogen bubbles.