Silicon-nitride-containing thermal chemical vapor deposition coating

    公开(公告)号:US10087521B2

    公开(公告)日:2018-10-02

    申请号:US14970015

    申请日:2015-12-15

    申请人: SILCOTEK CORP.

    摘要: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

    Liquid chromatography technique
    2.
    发明授权

    公开(公告)号:US10881986B2

    公开(公告)日:2021-01-05

    申请号:US16282626

    申请日:2019-02-22

    申请人: SILCOTEK CORP.

    摘要: Liquid chromatography techniques are disclosed. Specifically, the liquid chromatography technique includes providing a liquid chromatography system having a coated metallic fluid-contacting element, and transporting a fluid to contact the coated metallic fluid-contacting element. Conditions for the transporting of the fluid are selected from the group consisting of the temperature of the fluid being greater than 150° C., pressure urging the fluid being greater than 60 MPa, the fluid having a protein-containing analyte incompatible with one or both of titanium and polyether ether ketone, the fluid having a chelating agent incompatible with the one or both of the titanium or the polyether ether ketone, and combinations thereof.

    Coated article
    6.
    发明授权

    公开(公告)号:US10731247B2

    公开(公告)日:2020-08-04

    申请号:US15683399

    申请日:2017-08-22

    申请人: SILCOTEK CORP.

    摘要: The present invention relates to a coated article. The coated article includes a first layer, a second layer, and a diffusion region between the first layer and the second layer. The first layer has a first atomic concentration of C, a first atomic concentration of Si, and a first atomic concentration of O. The second layer has a first atomic concentration of Fe, a first atomic concentration of Cr, and a first atomic concentration of Ni. The diffusion region has a second atomic concentration of the C, a second atomic concentration of the Si, a second atomic concentration of the O, a second atomic concentration of the Fe, a second atomic concentration of the Cr, and a second atomic concentration of the Ni. All of the atomic concentrations are based upon Auger Electron Spectroscopy.

    Chemical vapor deposition process and coated article

    公开(公告)号:US11261524B2

    公开(公告)日:2022-03-01

    申请号:US16379236

    申请日:2019-04-09

    申请人: SILCOTEK CORP.

    IPC分类号: C23C16/44 B32B15/00 H01L21/02

    摘要: Chemical vapor deposition processes and coated articles are disclosed. The process includes a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time, a first decomposing of the first amount of the silane during at least a portion of the first period of time, a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time, and a second decomposing of the second amount of the silane during at least a portion of the second period of time. The process is devoid of inert gas purging between the first decomposing and the second introducing and/or produces a chemical vapor deposition coating devoid of hydrogen bubbles.

    Silicon-nitride-containing thermal chemical vapor deposition coating

    公开(公告)号:US10851455B2

    公开(公告)日:2020-12-01

    申请号:US16121994

    申请日:2018-09-05

    申请人: SILCOTEK CORP.

    摘要: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

    Chemical vapor deposition functionalization

    公开(公告)号:US09975143B2

    公开(公告)日:2018-05-22

    申请号:US14784731

    申请日:2014-05-14

    申请人: SILCOTEK CORP.

    IPC分类号: B05D1/00 B05D5/08 C09D5/08

    CPC分类号: B05D1/60 B05D5/083 C09D5/08

    摘要: Chemical vapor deposition articles and processes include a chemical vapor deposition functionalization on a material, the material including an sp3 arrangement of carbon. The chemical vapor deposition functionalization is positioned to be contacted by a process fluid, a hydrocarbon, an analyte, exhaust, or a combination thereof. Additionally or alternatively, the chemical vapor deposition functionalization is not of a refrigerator shelf or a windshield.