公开(公告)号：US20230260784A1

公开(公告)日：2023-08-17

申请号：US18140926

申请日：2023-04-28

申请人： ASM IP Holding B.V.

发明人： Tom Blomberg ,  Chiyu Zhu

IPC分类号： H01L21/02 ,  H01L21/28 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/02565 ,  H01L21/0262 ,  H01L21/0257 ,  H01L21/28194 ,  H01L21/0228 ,  C23C16/407 ,  C23C16/45527 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02592

摘要： Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.

公开(公告)号：US20190287769A1

公开(公告)日：2019-09-19

申请号：US15923834

申请日：2018-03-16

申请人： ASM IP Holding B.V.

发明人： Tom Blomberg ,  Varun Sharma ,  Chiyu Zhu

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/687

摘要： A reactor for processing substrates and methods for manufacturing and using the reactor are disclosed. Specifically, the reactor can include a material that forms gas compounds. The gas compounds are then easily removed from the reactor, thus reducing or avoiding contamination of the substrates in the reactor that would otherwise arise.

公开(公告)号：US20230290613A1

公开(公告)日：2023-09-14

申请号：US18179187

申请日：2023-03-06

申请人： ASM IP HOLDING B.V.

发明人： Varun Sharma ,  Tom Blomberg

IPC分类号： H01J37/32

CPC分类号： H01J37/32449 ,  H01J37/32816 ,  H01J37/32357 ,  H01J2237/182 ,  H01J2237/24585 ,  H01J2237/332

摘要： A semiconductor processing system for providing a remotely generated excited species of a processing gas to a reactor. The semiconductor processing system comprises a remotely positioned plasma generator in fluid communication with a plasm source vessel and a gas line to convey an excited species generated in the plasma generator to the reactor. The gas line may be a double-walled pipe comprising an outer pipe and a perforated an inner pipe or a gas line to which DC bias voltage is applied.

公开(公告)号：US11114283B2

公开(公告)日：2021-09-07

申请号：US15923834

申请日：2018-03-16

申请人： ASM IP Holding B.V.

发明人： Tom Blomberg ,  Varun Sharma ,  Chiyu Zhu

IPC分类号： H01L21/67 ,  H01J37/32 ,  H01L21/687

摘要： A reactor for processing substrates and methods for manufacturing and using the reactor are disclosed. Specifically, the reactor can include a material that forms gas compounds. The gas compounds are then easily removed from the reactor, thus reducing or avoiding contamination of the substrates in the reactor that would otherwise arise.

公开(公告)号：US20170154778A1

公开(公告)日：2017-06-01

申请号：US15429924

申请日：2017-02-10

申请人： ASM IP Holding B.V.

发明人： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Maes ,  Suvi Haukka ,  Eric Shero ,  Tom Blomberg ,  Dong Li

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/02

CPC分类号： H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

摘要： Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

公开(公告)号：US20160196977A1

公开(公告)日：2016-07-07

申请号：US14987413

申请日：2016-01-04

申请人： ASM IP Holding B.V.

发明人： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Maes ,  Suvi Haukka ,  Eric Shero ,  Tom Blomberg ,  Dong Li

IPC分类号： H01L21/28 ,  H01L21/285

CPC分类号： H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

摘要： Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

公开(公告)号：US09583348B2

公开(公告)日：2017-02-28

申请号：US14987413

申请日：2016-01-04

申请人： ASM IP Holding B.V.

发明人： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Maes ,  Suvi Haukka ,  Eric Shero ,  Tom Blomberg ,  Dong Li

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/28 ,  H01L21/02 ,  H01L21/285

CPC分类号： H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

摘要： Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

摘要翻译： 提供了用含有碳化钛的薄膜与含硅烷/硼烷剂一起处理含金属薄膜的方法。 在一些实施方案中，包含碳化钛的膜通过原子层沉积（ALD）工艺沉积在衬底上。 该方法可以包括多个沉积循环，其涉及包含钛和至少一种卤化物配体的第一源化学品的交替和顺序脉冲，包含金属和碳的第二源化学物质，其中来自第二源化学物质的金属和碳 和第三源化学品，其中第三源化学品是至少部分地减少由第一和第二源化学品形成的碳化钛层的氧化部分的硅烷或硼烷。 在一些实施方案中，处理在金属碳化物膜上形成覆盖层。

公开(公告)号：US11658030B2

公开(公告)日：2023-05-23

申请号：US16713311

申请日：2019-12-13

申请人： ASM IP Holding B.V.

发明人： Tom Blomberg ,  Chiyu Zhu

IPC分类号： H01L21/02 ,  H01L21/28 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/02565 ,  C23C16/401 ,  C23C16/407 ,  C23C16/45523 ,  C23C16/45527 ,  H01L21/0228 ,  H01L21/0257 ,  H01L21/0262 ,  H01L21/28194 ,  H01L21/02592

摘要： Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.

公开(公告)号：US20210358721A1

公开(公告)日：2021-11-18

申请号：US17385997

申请日：2021-07-27

申请人： ASM IP Holding B.V.

发明人： Tom Blomberg ,  Varun Sharma ,  Chiyu Zhu

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/687

摘要： A reactor for processing substrates and methods for manufacturing and using the reactor are disclosed. Specifically, the reactor can include a material that forms gas compounds. The gas compounds are then easily removed from the reactor, thus reducing or avoiding contamination of the substrates in the reactor that would otherwise arise.

公开(公告)号：US20180286675A1

公开(公告)日：2018-10-04

申请号：US15917262

申请日：2018-03-09

申请人： ASM IP Holding B.V.

发明人： Tom Blomberg ,  Chiyu Zhu

IPC分类号： H01L21/02

摘要： Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.