摘要:
A package structure is provided. The package structure includes a first die and a second die, a dielectric layer, a bridge, an encapsulant, and a redistribution layer structure. The dielectric layer is disposed on the first die and the second die. The bridge is electrically connected to the first die and the second die, wherein the dielectric layer is spaced apart from the bridge. The encapsulant is disposed on the dielectric layer and laterally encapsulating the bridge. The redistribution layer structure is disposed over the encapsulant and the bridge. A top surface of the bridge is in contact with the RDL structure.
摘要:
A millimeter wave integrated circuit (IC) chip. The IC chip comprises an IC die and a wire bond ball grid array package encapsulating the IC die. The wire bond ball grid array package comprises a solder ball array, a millimeter wave transmit channel, and a millimeter wave receive channel, wherein each millimeter wave transmit and receive channel electrically couples the IC die to a signal ball of the solder ball array and is configured to resonate at an operating frequency band of the millimeter wave IC chip.
摘要:
A package includes a molding compound, a through-via penetrating through the molding compound, a device die molded in the molding compound, and a buffer layer on and contacting the molding compound. An opening is through the buffer layer to the through-via. The buffer layer has ripples in a plane parallel to an interface between the molding compound and the buffer layer and around a circumference of the opening. Other embodiments contemplate an additional package bonded to the package, and methods for forming the package.
摘要:
A semiconductor device includes an insulating substrate including a first surface and an opposing second surface, and a semiconductor chip. The semiconductor chip is mounted over the first surface, includes signal electrodes, power-supply electrodes and ground electrodes, which connect to pads on the first surface of the insulating substrate. Lands provided on the second surface of the insulating substrate include signal lands, power-supply lands and ground lands through vias penetrate from the first surface to the second surface of the insulating substrate, and include signal vias electrically connected the signal connection pads to the signal lands, power-supply vias electrically connected the power-supply connection pads to the power-supply lands and ground vias electrically connected the ground connection pads to the ground lands. At least one of the signal vias are closer to the connection pads than immediately adjacent one of the power-supply vias or the ground vias.
摘要:
In one embodiment, an electronic package structure includes a substrate having one or more conductive plane layers formed therein. The substrate also includes a plurality of conductive pads on major surface configured to provide electrical interconnects to a next level of assembly. At least one conductive plane layer is configured to have cut-outs above the solder pads so that at least portions of the solder pad are not overlapped by the conductive plane layer.
摘要:
The present invention relates to a method of producing a multilayer circuit board including: a film-forming step of forming a swellable resin film on the surface of an insulative substrate, a circuit groove-forming step of forming circuit grooves having a depth equal to or greater than the thickness of the swellable resin film on the external surface of the film, a catalyst-depositing step of depositing a plating catalyst or the precursor thereof on the surface of the circuit grooves and the surface of the swellable resin film, a film-separating step of swelling the swellable resin film with a particular liquid and then separating the swollen resin film from the insulative substrate surface, and a plating processing step of forming an electrolessly plated film only in the region where the plating catalyst or the plating catalyst formed from the plating catalyst precursor remains unseparated after separation of the film.
摘要:
An electronic system includes a first electronic device (with a first integrated-circuit chip) and a second electronic device (with a second integrated-circuit chip). The second electronic device is stacked above the first electronic device on a same side as the first integrated-circuit chip. Electrical connection elements located around the first integrated-circuit chip electrically connected to the second electronic device to the first electronic device. A metal plate configured for heat capture and transfer extends between the first and second electronic devices. The metal plate includes through-passages aligned to permit the electrical connection elements to pass at a distance.
摘要:
A mounting member includes a plurality of internal connecting portions, each of which is electrically connected to an electronic device, and a plurality of external connecting portions, each of which is soldered, wherein the plurality of external connecting portions include a first connecting portion in communication with at least any of the plurality of internal connecting portions, and a second connecting portion different from the first connecting portion, and surfaces of the first connecting portion and the second connecting portion include gold layers, and a thickness of the gold layer of the second connecting portion is smaller than a thickness of the gold layer of the first connecting portion.
摘要:
A semiconductor device includes a wiring substrate. The wiring substrate includes a first surface, a second surface located at an opposite side of the first surface, a cavity formed in the first surface, an electrode pad formed on the first surface surrounding the cavity, and a high frequency wire exposed on the first surface. A semiconductor element is accommodated in the cavity. A bonding wire connects the semiconductor element and the electrode pad. A first protection film is arranged on the first surface of the wiring substrate to cover the first surface, the semiconductor element, the electrode pad, the bonding wire, and the high frequency wire.
摘要:
A method of making a semiconductor package with package-on-package stacking capability is characterized by the step of attaching a chip-on-interposer subassembly on a base carrier with the chip inserted into a through opening of the base carrier and the interposer laterally extending beyond the through opening. The interposer provides primary fan-out routing for the chip whereas dual buildup circuitries formed on both opposite sides of the base carrier provides further fan-out routing and are electrically connected to each other by plated through holes to provide the package with stacking capacity.