知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

4 条记录 (耗时 0.011 秒)

    STRUCTURES AND METHODS FOR CAPACITIVE ISOLATION DEVICES
    3.
    发明申请
    STRUCTURES AND METHODS FOR CAPACITIVE ISOLATION DEVICES 审中-公开

    公开(公告)号：US20190019776A1

    公开(公告)日：2019-01-17

    申请号：US15646976

    申请日：2017-07-11

    申请人： Texas Instruments Incorporated

    发明人： Enis Tuncer ,  Minhong Mi ,  Swaminathan Sankaran ,  Rajen M. Murugan ,  Vikas Gupta

    IPC分类号： H01L25/065 ,  H01L23/31 ,  H01L49/02 ,  H01L23/495 ,  H01L23/00

    摘要： Described examples include a packaged device including a first object and a second object spaced from each other by a gap, each object having a first surface and an opposite second surface, the first surfaces of the first object and the second object including first terminals. A structure includes at least two conductors embedded in a dielectric casing consolidating a configuration and organization of the at least two conductors, the at least two conductors having end portions un-embedded by the dielectric casing. An end portion of at least one of the at least two conductors is electrically connected to a first terminal of the first object, and an opposite end portion of the at least one of the at least two conductors is electrically connected to a respective first terminal of the second object, the at least two conductors electrically connecting the first object and the second object.