公开(公告)号：US20240258186A1

公开(公告)日：2024-08-01

申请号：US18630486

申请日：2024-04-09

Applicant: Rohm Co., Ltd.

Inventor： Ryotaro KAKIZAKI ,  Koshun SAITO

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/495

CPC classification number: H01L23/3121 ,  H01L23/49555 ,  H01L24/45 ,  H01L24/48 ,  H01L23/49513 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/46 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/06181 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/46 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49052 ,  H01L2224/49112 ,  H01L2224/73265 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13055 ,  H01L2924/13091

Abstract: A semiconductor device includes a semiconductor element, a conductor, and a sealing resin. The conductor includes a die pad, a first terminal, and a second terminal. The sealing resin covers a portion of the conductor and the semiconductor element. The sealing resin includes first, second, third and fourth resin surfaces. The die pad includes a first-lead obverse surface with the semiconductor element mounted, and a first-lead reverse surface exposed from the second resin surface. The first terminal is bent in a first sense of z direction and exposed from the third resin surface. The second terminal is bent in the first sense of z direction and exposed from the fourth resin surface. The first resin surface includes a recessed region recessed in z direction toward the second resin surface. As viewed in z direction, the recessed region overlaps with an imaginary line connecting the first terminal and the second terminal.

公开(公告)号：US20170271296A1

公开(公告)日：2017-09-21

申请号：US15597367

申请日：2017-05-17

Applicant: ROSENBERGER HOCHFREQUENZTECHNIK GMBH & CO. KG

Inventor： Sean S. Cahill ,  Eric A. Sanjuan

IPC: H01L23/00 ,  H01L23/66

CPC classification number: H01L24/46 ,  H01L23/3142 ,  H01L23/50 ,  H01L23/564 ,  H01L23/66 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2223/6611 ,  H01L2224/4382 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45573 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/4569 ,  H01L2224/46 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/4917 ,  H01L2224/85444 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/43848

Abstract: A method of manufacturing a bond wire having a metal core, a dielectric layer, and a ground connectable metallization, wherein the bond wire has one or more vapor barrier coatings, and manufacturing a die package with at least one bond wire according to the invention.

公开(公告)号：US20170125370A1

公开(公告)日：2017-05-04

申请号：US14902183

申请日：2014-07-02

Applicant: ROSENBERGER HOCHFREQUENZTECHNIK GMBH & CO. KG

Inventor： Sean S. Cahill ,  Eric A. Sanjuan

IPC: H01L23/00 ,  H01L23/66

CPC classification number: H01L24/46 ,  H01L23/3142 ,  H01L23/50 ,  H01L23/564 ,  H01L23/66 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2223/6611 ,  H01L2224/4382 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45573 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/4569 ,  H01L2224/46 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/4917 ,  H01L2224/85444 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A bond wire having a metal core, a dielectric layer, and a ground connectable metallization, wherein the bond wire has one or more vapor barrier coatings. Further, the present invention relates to a die package with at least one bond wire according to the invention.

公开(公告)号：US08063489B2

公开(公告)日：2011-11-22

申请号：US12628869

申请日：2009-12-01

Applicant: Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

Inventor： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

IPC: H01L23/52

CPC classification number: H01L24/05 ,  H01L21/565 ,  H01L22/32 ,  H01L23/485 ,  H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/02205 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/0568 ,  H01L2224/06183 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4502 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/46 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48158 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/4868 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/4878 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4888 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/078 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/0665 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0002 ,  H01L2924/00015

Abstract: In semiconductor integrated circuit devices for vehicle use or the like, in general, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding or the like using a gold wire and the like for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). The invention of the present application provides a semiconductor integrated circuit device (semiconductor device or electron circuit device) which includes a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board or the like (wiring substrate).

Abstract translation: 在用于车辆用途的半导体集成电路装置等中，为了便于安装，通常使用金线等通过引线接合等将半导体芯片上的铝焊盘和外部装置彼此耦合。 然而，这样的半导体集成电路器件在相对较高的温度（约150℃）下长时间使用铝和金之间的相互作用导致连接故障。 本申请的发明提供了一种半导体集成电路器件（半导体器件或电子电路器件），其包括作为器件的一部分的半导体芯片，设置在铝上的电解镀金表面膜（金基金属镀膜） 通过阻挡金属膜在半导体芯片上的金焊接焊盘和用于在电镀表面膜和设置在布线基板等上的外部引线之间互连的金键合线（金基接合线）。

公开(公告)号：US20100133688A1

公开(公告)日：2010-06-03

申请号：US12628869

申请日：2009-12-01

Applicant: Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

Inventor： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

IPC: H01L23/488

CPC classification number: H01L24/05 ,  H01L21/565 ,  H01L22/32 ,  H01L23/485 ,  H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/02205 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/0568 ,  H01L2224/06183 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4502 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/46 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48158 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/4868 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/4878 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4888 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/078 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/0665 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0002 ,  H01L2924/00015

Abstract: In semiconductor integrated circuit devices for vehicle use or the like, in general, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding or the like using a gold wire and the like for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). The invention of the present application provides a semiconductor integrated circuit device (semiconductor device or electron circuit device) which includes a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board or the like (wiring substrate).

Abstract translation: 在用于车辆用途的半导体集成电路装置等中，为了便于安装，通常使用金线等通过引线接合等将半导体芯片上的铝焊盘和外部装置彼此耦合。 然而，这样的半导体集成电路器件在相对较高的温度（约150℃）下长时间使用铝和金之间的相互作用导致连接故障。 本申请的发明提供了一种半导体集成电路器件（半导体器件或电子电路器件），其包括作为器件的一部分的半导体芯片，设置在铝上的电解镀金表面膜（金基金属镀膜） 通过阻挡金属膜在半导体芯片上的金焊接焊盘和用于在电镀表面膜和设置在布线基板等上的外部引线之间互连的金键合线（金基接合线）。

公开(公告)号：US20240047438A1

公开(公告)日：2024-02-08

申请号：US18267455

申请日：2021-11-22

Applicant: ROHM CO., LTD.

Inventor： Hiroaki MATSUBARA ,  Taro NISHIOKA ,  Yoshizo OSUMI ,  Tomohira KIKUCHI ,  Moe YAMAGUCHI ,  Ryohei UMENO

IPC: H01L25/16 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00

CPC classification number: H01L25/16 ,  H01L23/3107 ,  H01L23/49579 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/46 ,  H01L2224/48195 ,  H01L2224/48245 ,  H01L2224/48991 ,  H01L2224/48455 ,  H01L2924/19042 ,  H01L2924/3512

Abstract: A semiconductor device includes first and second semiconductor elements, and first and second circuits at different potentials. The second semiconductor element, electrically connected to the first semiconductor element, relays mutual signals between the first and the second circuits, while insulating them. The semiconductor device further includes a first terminal lead electrically connected to the first semiconductor element, a first wire connected to the first and the second semiconductor elements, and a second wire connected to the first semiconductor element and the first terminal lead. The first wire contains a first metal. The second wire includes a first core containing a second metal, and a first surface layer containing a third metal and covering the first core. The second metal has a smaller atomic number than that of the first metal. The third metal has a greater bonding strength with respect to the first terminal lead than the second metal.

公开(公告)号：US10074634B2

公开(公告)日：2018-09-11

申请号：US15908086

申请日：2018-02-28

Applicant: ROHM CO., LTD.

Inventor： Keiji Okumura

IPC: H01L29/15 ,  H01L25/07 ,  H02M7/00 ,  H01L29/16 ,  H01L23/00 ,  H01L29/24 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872 ,  H01L23/31

CPC classification number: H01L25/072 ,  H01L23/3121 ,  H01L24/06 ,  H01L24/45 ,  H01L24/46 ,  H01L24/73 ,  H01L29/1608 ,  H01L29/24 ,  H01L29/78 ,  H01L29/8611 ,  H01L29/872 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/06515 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/46 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/49112 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.

公开(公告)号：US20180190624A1

公开(公告)日：2018-07-05

申请号：US15908086

申请日：2018-02-28

Applicant: ROHM CO., LTD.

Inventor： Keiji OKUMURA

IPC: H01L25/07 ,  H01L29/16 ,  H01L23/00 ,  H01L29/24 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872 ,  H01L23/31 ,  H02M7/00

CPC classification number: H01L25/072 ,  H01L23/3121 ,  H01L24/06 ,  H01L24/45 ,  H01L24/46 ,  H01L24/73 ,  H01L29/1608 ,  H01L29/24 ,  H01L29/78 ,  H01L29/8611 ,  H01L29/872 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/06515 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/46 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/49112 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.

公开(公告)号：US09917074B2

公开(公告)日：2018-03-13

申请号：US15609407

申请日：2017-05-31

Applicant: ROHM CO., LTD.

Inventor： Keiji Okumura

IPC: H01L29/15 ,  H01L25/07 ,  H02M7/00 ,  H01L29/24 ,  H01L23/31 ,  H01L29/872 ,  H01L29/78 ,  H01L29/16 ,  H01L29/861 ,  H01L23/00

CPC classification number: H01L25/072 ,  H01L23/3121 ,  H01L24/06 ,  H01L24/45 ,  H01L24/46 ,  H01L24/73 ,  H01L29/1608 ,  H01L29/24 ,  H01L29/78 ,  H01L29/8611 ,  H01L29/872 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/06515 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/46 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/49112 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.

公开(公告)号：US09461021B2

公开(公告)日：2016-10-04

申请号：US15001195

申请日：2016-01-19

Applicant: ROHM CO., LTD.

Inventor： Keiji Okumura

IPC: H01L29/15 ,  H01L25/07 ,  H02M7/00 ,  H01L29/24 ,  H01L23/31 ,  H01L29/16 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872 ,  H01L23/00

CPC classification number: H01L25/072 ,  H01L23/3121 ,  H01L24/06 ,  H01L24/45 ,  H01L24/46 ,  H01L24/73 ,  H01L29/1608 ,  H01L29/24 ,  H01L29/78 ,  H01L29/8611 ,  H01L29/872 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/06515 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/46 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/49112 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a first chip including a PN junction diode, and a second chip including a Schottky barrier diode, connected in parallel to the first chip. A first inductive metal member has a first end connected to a cathode of the PN junction diode, and a second end connected to a cathode of the Schottky barrier diode. A second inductive metal member has a third end connected to the cathode of the Schottky barrier diode. An output line is connected to a fourth end of the second connection member, and electrically connected to the cathode of the PN junction diode via a first path formed by the first and second metal members, and to the cathode of the Schottky barrier diode via a second path formed by the second metal member and exclusive of the first metal member, so that the first path has greater inductance than the second.

Abstract translation: 半导体器件包括与第一芯片并联连接的包括PN结二极管的第一芯片和包括肖特基势垒二极管的第二芯片。 第一电感金属构件具有连接到PN结二极管的阴极的第一端和连接到肖特基势垒二极管的阴极的第二端。 第二感性金属构件具有连接到肖特基势垒二极管的阴极的第三端。 输出线连接到第二连接构件的第四端，并且经由第一和第二金属构件形成的第一路径和经由一个第二连接构件的肖特基势垒二极管的阴极电连接到PN结二极管的阴极 第二路径由第二金属构件形成并且不包括第一金属构件，使得第一路径具有比第二路径更大的电感。