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    Bridge circuits and their components
    1.
    发明授权
    Bridge circuits and their components 有权

    公开(公告)号：US09866210B2

    公开(公告)日：2018-01-09

    申请号：US14539098

    申请日：2014-11-12

    Applicant: Transphorm Inc.

    Inventor： James Honea ,  Yifeng Wu

    IPC: H03K17/56 ,  H03K17/0814 ,  H03K17/16 ,  H03K17/567 ,  H03K17/687 ,  H03K17/22

    Abstract: A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor.

    Package configurations for low EMI circuits
    6.
    发明授权
    Package configurations for low EMI circuits 有权
    低EMI电路的封装配置

    公开(公告)号：US09190295B2

    公开(公告)日：2015-11-17

    申请号：US14480980

    申请日：2014-09-09

    Applicant: Transphorm Inc.

    Inventor： Yifeng Wu

    IPC: H01L21/00 ,  H01L21/48 ,  H01L23/057 ,  H01L23/36 ,  H01L25/11 ,  H01L21/77 ,  H01L27/02

    CPC classification number: H01L21/4803 ,  H01L21/4814 ,  H01L21/4871 ,  H01L21/77 ,  H01L23/057 ,  H01L23/36 ,  H01L25/072 ,  H01L25/115 ,  H01L27/0248 ,  H01L2224/48091 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: An electronic component includes a high voltage switching transistor encased in a package. The high voltage switching transistor comprises a source electrode, a gate electrode, and a drain electrode all on a first side of the high voltage switching transistor. The source electrode is electrically connected to a conducting structural portion of the package. Assemblies using the abovementioned transistor with another transistor can be formed, where the source of one transistor can be electrically connected to a conducting structural portion of a package containing the transistor and a drain of the second transistor is electrically connected to the second conductive structural portion of a package that houses the second transistor. Alternatively, the source of the second transistor is electrically isolated from its conductive structural portion, and the drain of the second transistor is electrically isolated from its conductive structural portion.

    Abstract translation: 电子部件包括封装在封装中的高压开关晶体管。 高电压开关晶体管包括全部在高压开关晶体管的第一侧上的源电极，栅电极和漏电极。 源电极电连接到封装的导电结构部分。 可以形成使用上述晶体管与另一晶体管的组件，其中一个晶体管的源极可以电连接到包含晶体管的封装的导电结构部分，并且第二晶体管的漏极电连接到第二导体结构部分的第二导电结构部分 一个容纳第二个晶体管的封装。 或者，第二晶体管的源极与其导电结构部分电隔离，并且第二晶体管的漏极与其导电结构部分电隔离。

    Package configurations for low EMI circuits
    9.
    发明授权
    Package configurations for low EMI circuits 有权
    低EMI电路的封装配置

    公开(公告)号：US08890314B2

    公开(公告)日：2014-11-18

    申请号：US14063438

    申请日：2013-10-25

    Applicant: Transphorm Inc.

    Inventor： Yifeng Wu

    IPC: H01L23/34 ,  H01L23/057 ,  H01L25/11 ,  H01L23/36 ,  H01L27/02 ,  H01L21/77

    CPC classification number: H01L21/4803 ,  H01L21/4814 ,  H01L21/4871 ,  H01L21/77 ,  H01L23/057 ,  H01L23/36 ,  H01L25/072 ,  H01L25/115 ,  H01L27/0248 ,  H01L2224/48091 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: An electronic component includes a high voltage switching transistor encased in a package. The high voltage switching transistor comprises a source electrode, a gate electrode, and a drain electrode all on a first side of the high voltage switching transistor. The source electrode is electrically connected to a conducting structural portion of the package. Assemblies using the abovementioned transistor with another transistor can be formed, where the source of one transistor can be electrically connected to a conducting structural portion of a package containing the transistor and a drain of the second transistor is electrically connected to the second conductive structural portion of a package that houses the second transistor. Alternatively, the source of the second transistor is electrically isolated from its conductive structural portion, and the drain of the second transistor is electrically isolated from its conductive structural portion.

    Abstract translation: 电子部件包括封装在封装中的高压开关晶体管。 高电压开关晶体管包括全部在高压开关晶体管的第一侧上的源电极，栅电极和漏电极。 源电极电连接到封装的导电结构部分。 可以形成使用上述晶体管与另一晶体管的组件，其中一个晶体管的源极可以电连接到包含晶体管的封装的导电结构部分，并且第二晶体管的漏极电连接到第二导体结构部分的第二导电结构部分 一个容纳第二个晶体管的封装。 或者，第二晶体管的源极与其导电结构部分电隔离，并且第二晶体管的漏极与其导电结构部分电隔离。

    GATE DRIVERS FOR CIRCUITS BASED ON SEMICONDUCTOR DEVICES
    10.
    发明申请
    GATE DRIVERS FOR CIRCUITS BASED ON SEMICONDUCTOR DEVICES 有权
    基于半导体器件的电路门驱动器

    公开(公告)号：US20140292395A1

    公开(公告)日：2014-10-02

    申请号：US14222992

    申请日：2014-03-24

    Applicant: Transphorm Inc.

    Inventor： Yifeng Wu ,  Liang Zhou ,  Zhan Wang

    IPC: H03K17/16

    CPC classification number: H03K17/162 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/4236 ,  H01L29/66522 ,  H01L29/7786 ,  H03K17/163 ,  H03K2017/6875

    Abstract: An electronic component includes a switching device comprising a source, a gate, and a drain, the switching device having a predetermined device switching rate. The electronic component further includes a gate driver electrically connected to the gate and coupled between the source and the gate of the switching device, the gate driver configured to switch a gate voltage of the switching device at a gate driver switching rate. The gate driver is configured such that in operation, an output current of the gate driver cannot exceed a first current level, wherein the first current level is sufficiently small to provide a switching rate of the switching device in operation to be less than the predetermined device switching rate.

    Abstract translation: 电子部件包括开关装置，其包括源极，栅极和漏极，开关器件具有预定的器件切换速率。 电子部件还包括电连接到栅极并耦合在开关器件的源极和栅极之间的栅极驱动器，栅极驱动器被配置为以栅极驱动器切换速率切换开关器件的栅极电压。 栅极驱动器被配置为使得在操作中，栅极驱动器的输出电流不能超过第一电流电平，其中第一电流电平足够小以使开关装置在运行中的开关率小于预定的装置 切换率。

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